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Synergistic engineering of hole transport materials in perovskite solar cells

InfoMat 2020年第5期2卷 928-941页

作者： Sally Mabrouk Behzad Bahrami Hytham Elbohy Khan Mamun Reza Ashim Gurung Mao Liang Fan Wu Mingtai Wang Shangfeng Yang Qiquan Qiao Center for Advanced Photovoltaics Department of Electrical Engineering and Computer ScienceSouth Dakota State UniversityBrookingsSouth Dakota Physics Department Damietta UniversityNew Damietta CityEgypt Tianjin Key Laboratory of Organic Solar Cells and Photochemical Conversion Department of Applied ChemistryTianjin University of TechnologyTianjinChina Key Lab of Optoelectronic Materials and Devices School of ScienceHuzhou UniversityHuzhouChina Institute of Applied Technology Hefei Institutes of Physical ScienceChinese Academy of SciencesHefeiChina Hefei National Laboratory for Physical Sciences at Microscale CAS Key Laboratory of Materials for Energy ConversionDepartment of Materials Science and EngineeringSynergetic Innovation Center of Quantum Information and Quantum PhysicsUniversity of Science and Technology of ChinaHefeiChina

In this work,methylammonium lead triiodide(CH3NH3PbI3)perovskite solar cells with efficiencies higher than 18%were achieved using a new nanocomposite hole transport layer(HTL)by doping poly(ethylenedioxythiophene):poly(styrene sulfonate)(PEDOT:PSS)with a mixed dopant of polyaniline(PANI)and graphene oxide(GO).A synergistic engineering between GO,PANI,and PEDOT:PSS was accomplished to introduce additional energy levels between perovskite and PEDOT:PSS and increase the conductivity of PEDOT:*** probe force microscope results confirmed that adding GO to PEDOT:PSS/PANI composite significantly reduced the average surface *** increased the open circuit voltage(Voc)to 1.05 V for the GO/PEDOT:PSS/PANI nanocomposite perovskite solar cells from the pristine PEDOT:PSS(Voc=0.95 V)and PEDOT:PSS/PANI(Voc=0.99 V).In addition,adding PANI to the HTLs substantially enhanced short circuit current density(Jsc).This was supported by the current sensing-atomic force microscopy(CS-AFM)and conductivity *** PANI doped films showed superior electrical conductivity compared with those without PANI as indicated by CS-AFM *** can fill the gaps between the microflakes of GO and give rise to more compact hole transport material(HTM)*** led to a higher Jsc after doping with PANI,which was consistent with the incident photon-to-current efficiency and electrochemical impedance spectroscopy *** results of X-ray diffraction(XRD)and AFM indicated the GO/PANI doped HTMs significantly improved the crystallinity,topography,and crystal size of the perovskite film grown on their surface.A higher efficiency of 18.12%for p-i-n perovskite solar cells has been obtained by adding the mixed dopant of GO,PANI,and PEDOT:PSS,demonstrating better stability than the pristine PEDOT:PSS cell.

关键词： composite hole transport material perovskite solar cell polyaniline and graphene oxide

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