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Electromechanical Fields Near a Circular pn junction Between Two Piezoelectric Semiconductors

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Acta Mechanica Solida Sinica 2018年第2期31卷 127-140页

作者： Yixun Luo Ruoran Cheng Chunli Zhang Weiqiu Chen Jiashi Yang Department of Engineering Mechanics Zhejiang University Hangzhou 310027 Zhejiang China Department of Mechanical and Materials Engineering University of Nebraska-Lincoln Lincoln NE 68588-0526 USA Soft Matter Research Center (SMRC) Zhejiang University Hangzhou 310027 China Key Laboratory of Soft Machines and Smart Devices of Zhejiang Province Hangzhou 310027 China

We study electromechanical fields near the interface between a circular piezoelectric semiconductor cylinder and another piezoelectric semiconductor in which it is embedded. The cylinder is p-doped. The surrounding material is n-doped. The phenomenological theory of piezoelectric semiconductors consisting of the equations of piezoelectricity and the conservation of charge for holes and electrons is used. The theory is linearized for small carrier concentration perturbations. An analytical solution is obtained, showing the formation of a pn junction near the interface. Various electromechanical fields associated with the junction are calculated. The effects of a few physical parameters are examined.

关键词： Piezoelectric semiconductors Cylinder Carriers pn junction Electromechanical coupling

Study on Photocapacitance in pn junction of High Resistivity P-type Silicon

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Semiconductor Photonics and Technology 1998年第3期4卷 193-195页

作者： CHEN Jie (Hangzhou Institute of Appl. Eng. Tech.,Hangzhou 310012,CHN)

The pn junction photodiode is fabricated with high resistivity P-type silicon ( ρ =12 000 Ω·cm).The experimental C-V curves with and without laser radiation were *** relative change of capacitance can be greater than 100%,which is much greater than the relative change for low resistivity P-type *** relative change of capacitance with and without laser radiation at zero bias is 121.7%.

关键词： Photocapacitance Photodiodes pn junction Semiconductor Photoelectric Devices

Two-dimensional complementary gate-programmable pn junctions for reconfigurable rectifier circuit

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Nano Research 2023年第1期16卷 1252-1258页

作者： Zhe Sheng Yue Wang Wennan Hu Haoran Sun Jianguo Dong Rui Yu David Wei Zhang Peng Zhou Zengxing Zhang State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China National Integrated Circuit Innovation Center Shanghai 201203China

The unique features of ambipolar two-dimensional materials open up a great opportunity to build gate-programmable devices for reconfigurable circuit applications,e.g.,pn junctions for rectifier ***,current-reported rectifier circuits usually consist of one gate-programmable pn junction as the rectifier and one resistor as the load,which are not conductive to voltage output and large-scale *** we propose an approach of complementary gate-programmable pn junctions to assemble reconfigurable rectifier circuit,which include two symmetric back-to-back black phosphorus(BP)/hexagonal boron nitride(h-BN)/graphene heterostructured semi-gate field-effect transistors(FETs)and perform complementary NP and pn junction like complementary metal-oxide-semiconductor(CMOS)*** investigation exhibits that the circuit can effectively reconfigure the circuit with/without rectifying ability,and can process alternating current(AC)signals with the frequency prior 1 KHz and reconfiguration speed up to 25μ*** also achieve the reconfigurable rectifier circuit memory via complementary semi-floating gate FETs *** complementary configuration here should be of low output impedance and low static power consumption,being beneficial for effective voltage output and large-scale integration.

关键词： two-dimensional(2D)material pn junction rectifier circuit complementary configuration

Comparison of time-related electrical properties of pn junctions and Schottky diodes for Zn O-based betavoltaic batteries

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Nuclear Science and Techniques 2020年第2期31卷 55-66页

作者： Xiao-Yi Li Jing-Bin Lu Ren-Zhou Zheng Yu Wang Xu Xu Yu-Min Liu Rui He College of Physics Jilin UniversityChangchun 130012China East China University of Technology Nanchang 330013China

Schottky diodes and pn junctions were utilized as energy converting structures in ZnO-based betavoltaic batteries,in which 0.101121 Ci 63Ni was selected as the beta *** time-related electrical properties were obtained using Monte Carlo *** the n-type ZnO,the Pt/ZnO Schottky diode had the highest energy conversion efficiency,and the Ni/ZnO Schottky diode had the largest *** overall electrical performance of pn junctions is better than that of Schottky *** lifetimes of Pt/ZnO and Ni/ZnO are longer than for other Schottky devices,coming close to those of pn *** that Schottky diodes are easier to fabricate and independent of p-type semiconductors,Pt/ZnO and Ni/ZnO diodes offer alternatives to pn-junction-based betavoltaic batteries.

关键词： Beta voltaic effect Zinc oxide Time-related properties pn junction Schottky diode Monte Carlo simulation

Effects of an attached functionally graded layer on the electromechanical behaviors of piezoelectric semiconductor fibers

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Applied Mathematics and Mechanics(English Edition) 2022年第9期43卷 1367-1380页

作者： Kai FANG Nian LI Peng LI Zhenghua QIAN V.KOLESOV I.KUZNETSOVA State Key Laboratory of Mechanics and Control of Mechanical Structures College of Aerospace EngineeringNanjing University of Aeronautics and AstronauticsNanjing 210016China Nanjing University of Aeronautics and Astronautics Shenzhen Research Institute Shenzhen 518057Guangdong ProvinceChina Kotel’nikov Institute of Radio Engineering and Electronics of Russian Academy of Sciences Moscow 125009Russia

In this paper,we propose a specific two-layer model consisting of a functionally graded(FG)layer and a piezoelectric semiconductor(PS)*** on the macroscopic theory of PS materials,the effects brought about by the attached FG layer on the piezotronic behaviors of homogeneous n-type PS fibers and pn junctions are *** semi-analytical solutions of the electromechanical fields are obtained by expanding the displacement and carrier concentration variation into power *** show that the antisymmetry of the potential and electron concentration distributions in homogeneous n-type PS fibers is destroyed due to the material inhomogeneity of the attached FG *** addition,by creating jump discontinuities in the material properties of the FG layer,potential barriers/wells can be produced in the middle of the ***,the potential barrier configuration near the interface of a homogeneous PS pn junction can also be manipulated in this way,which offers a new choice for the design of pn junction based devices.

关键词： piezoelectric semiconductor(PS) functionally graded(FG)material composite structure pn junction

Diamond-based electron emission:Structure,properties and mechanisms

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Chinese Physics B 2024年第9期33卷 165-177页

作者： Liang-Xue Gu Kai Yang Yan Teng Wei-Kang Zhao Geng-You Zhao Kang-Kang Fan Bo Feng Rong Zhang You-Dou Zheng Jian-Dong Ye Shun-Ming Zhu Kun Tang Shu-Lin Gu School of Electronic Science and Engineering Nanjing UniversityNanjing 210046China

Diamond has an ultrawide bandgap with excellent physical properties,such as high critical electric field,excellent thermal conductivity,high carrier mobility,*** with a hydrogen-terminated(H-terminated)surface has a negative electron affinity(NEA)and can easily produce surface electrons from valence or trapped electrons via optical absorption,thermal heating energy or carrier transport in a pn *** NEA of the H-terminated surface enables surface electrons to emit with high efficiency into the vacuum without encountering additional barriers and promotes further development and application of diamond-based emitting *** article reviews the electron emission properties of H-terminated diamond surfaces exhibiting NEA *** electron emission is induced by different physical *** advancements in electron-emitting devices based on diamond are also ***,the current challenges and future development opportunities are discussed to further develop the relevant applications of diamond-based electronemitting devices.

关键词： diamond negative electron affinity(NEA) pn junction electron emission

基于室温铁磁性的(Fe,Al)共掺杂SiGe铁磁pn二极管的可调整流和磁阻特性

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Science China Materials 2024年第2期67卷 573-579页

作者：李加飞张析向钢 College of Physics Sichuan UniversityChengdu 610064China

Ⅳ族稀磁半导体因其优异的磁电性能,以及在与当前主流半导体集成技术兼容的自旋电子器件中具有广阔的应用前景而受到越来越多的关注.事实上,具有室温铁磁性的Ⅳ族稀磁半导体及其衍生器件更有望在实际中得以应用.本工作设计并制备了基于p... 详细信息

Ⅳ族稀磁半导体因其优异的磁电性能,以及在与当前主流半导体集成技术兼容的自旋电子器件中具有广阔的应用前景而受到越来越多的关注.事实上,具有室温铁磁性的Ⅳ族稀磁半导体及其衍生器件更有望在实际中得以应用.本工作设计并制备了基于p型(Fe,Al)共掺杂SiGe薄膜和n型Ge衬底的磁性pn二极管.磁性测量以及磁阻和反常霍尔效应测试揭示了p型(Fe,Al)共掺杂SiGe薄膜的室温铁磁性.有趣的是,磁性pn异质结表现出磁场可调的整流和磁阻行为.我们的研究结果为制备具有室温铁磁性的Ⅳ族稀磁半导体提供了一种可选策略,并为Ⅳ族稀磁半导体的实际自旋电子应用提供了范例.

关键词： diluted magnetic semiconductor SiGe pn junction rectification magnetoresistance

Solar-blind avalanche photodetector based on epitaxial Ga_(2)O_(3)/La_(0.8)Ca_(0.2)MnO_(3) pn heterojunction with ultrahigh gain

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Chinese Optics Letters 2023年第5期21卷 82-87页

作者：李宁张清怡杨永涛唐源骏张涛申佳颖王月晖张帆张杨吴真平 State Key Laboratory of Information Photonics and Optical Communications&School of Science Beijing University of Posts and TelecommunicationsBeijing 100876China Institute of Modern Optics Nankai UniversityTianjin 300071China Tianjin Key Laboratory of Micro-Scale Optical Information Science and Technology Tianjin 300071China

Ga_(2)O_(3)-based avalanche photodetectors(APDs) have gained increasing attention because of their excellent photoelectric conversion capability in the UV solar-blind region. Integrating high-quality epitaxial Ga_(2)O_(3) with p-type semiconductor remains an open challenge associated with the integration difficulty on alleviating its defects and dislocations. Herein,we construct an APD consisting of epitaxial β-Ga_(2)O_(3)/La_(0.8)Ca_(0.2)MnO_(3) heterostructure. The pn junction APDs exhibit a high responsivity of 568 A/W as well as an enhanced avalanche gain of up to 3.0 × 10~5 at a reverse bias voltage of 37.9 V. The integration capability demonstrated in this work provides exciting opportunities for further development of high-performance Ga_(2)O_(3)-based electronics and optoelectronics.

关键词： avalanche photodetector Ga_(2)O_(3) solar-blind pn junction

Silicon　Photodiode　with　Very　Small　Sensitive　Area

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Semiconductor Photonics and Technology 1996年第4期2卷 289-292页

作者： ① YIN Changsong,LI Xiaojun (Wuhan University,Wuhan 430072,CHN)

The silicon pn junction photodiode with very small sensitive area has been *** device gets superhigh light current density J LS counted by the sensitive area in the planar pn *** superhigh light current density is due to the light current transferred by the photogenerated minority carriers in the area around edges of the dopant diffused ***,we can determine the diffusion length of the photogenerated minority carriers in the substance by measuring the light current of the pn junction photodiode with very small sensitive area.

关键词： Photodiode Photoelectric Conversion pn junction