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plasma Science and Technology 2010年第4期12卷 433-436页

作者：熊礼威刘繁汪建华满卫东翁俊刘长林 Institute of plasma Physics Chinese Academy of Sciences Key Laboratory of plasma Chemistry and Advanced Materials of Hubei Province Wuhan Institute of Technology

plasma treatments of boron-doped nano-crystalline diamond （NCD） thin films were carried out in order to improve their electrical properties of the films. Boron-doped NCD thin films were fabricated on well polished poly-crystalline diamond （PCD） thick films in a microwave plasma enhanced chemical vapor deposition （MPCVD） reactor, then they were processed in methane, ar- gon, hydrogen and B2H~ （0.1% diluted by H~） plasmas, respectively. Scanning electron microscopy （SEM） and atomic force microscope （AFM） results show that the surface morphology changed lit- tle during the 10 min treatment. Secondary ion mass spectroscopy （SIMS） results indicate that B2H6 plasma was efficient for increasing boron concentration in NCD films, while the carrier anal- yses demonstrates that CH4 plasma processing was effective to activate the dopants and resulted in good electrical properties.

关键词： diamond films plasma processing chemical vapor deposition semiconductors

Fabrication of a large-aperture continuous phase plate in two modes using atmospheric pressure plasma processing

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Chinese Optics Letters 2018年第10期16卷 65-69页

作者： Xing Su Longguang Xia Kan Liu Peng Zhang Ping Li Runchang Zhao Bo Wang Center for Precision Engineering Harbin Institute of TechnologyHarbin 150001China Research Center of Laser Fusion China Academy of Engineering PhysicsMianyang 621900China

In order to fabricate a large-aperture continuous phase plate(CPP)using atmospheric pressure plasma processing(APPP)with high efficiency and precision,the position dwell mode and velocity mode were proposed and the iterative calculation method was developed for the non-constant removal *** 320 mm×320 mm×2 mm CPPs were fabricated with two processing *** experiment results show that the velocity mode is capable of significantly reducing the processing time and shape *** total processing time is decreased from 13.2 h to 9.3 h,and the surface shape error is decreased from 0.158λto 0.119λ(λ=632.8 nm)(root mean square).

关键词： Diffractive optical elements Laser fusion Optical fabrication Phase plates plasma processes plasma processing

Facile sensitizing of PbSe film for near-infrared photodetector by microwave plasma processing

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Chinese Physics B 2022年第3期31卷 613-618页

作者： Kangyi Zhao Shuanglong Feng Chan Yang Jun Shen Yongqi Fu School of Physics University of Electronic Science and Technology of ChinaChengdu 610054China Chongqing Institute of Green and Intelligent Technology Chinese Academy of SciencesChongqing 400714China

High quality PbSe film was first fabricated by a thermal evaporation method, and then the effect of plasma sensitization on the PbSe film was systemically investigated. Typical detectivity and significant photosensitivity are achieved in the PbSe-based photodetector, reaching maximum values of 7.6 × 10^(9)cm·Hz^(1/2)/W and 1.723 A/W, respectively. Compared with thermal annealing, plasma sensitization makes the sensitization easier and significantly improves the performance.

关键词： PbSe film infrared photodetector plasma processing

Development of 3D Scanning System for Robotic plasma processing of Medical Products with Complex Geometries

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Journal of Electronic Science and Technology 2020年第3期18卷 212-222页

作者： Darya L.Alontseva Elaheh Ghassemieh Alexander L.Krasavin Albina T.Kadyroldina School of Information Technology and Intelligent Systems D.Serikbayev East Kazakhstan State Technical UniversityUst-Kamenogorsk 070004 Wolfson School of Mechanical Electrical and Manufacturing EngineeringLoughborough UniversityLoughborough LE113TU

This paper describes the development of an intelligent automated control system of a robot manipulator for plasma treatment of medical implants with complex *** two-layer coatings from the Ti wire and hydroxyapatite powders are applied on the surface of Ti medical implants by microplasma spraying to increase the biocompatibility of *** coating process requires precise control of a number of parameters,particularly the plasma spray distance and plasma jet traverse ***,the development of the robotic plasma surface treatment involves automated path *** key idea of the proposed intelligent automatic control system is the use of data of preliminary three-dimensional (3D) scanning of the processed implant by the robot *** segmentation algorithm of the point cloud from laser scanning of the surface is *** methodology is suitable for robotic 3D scanning systems with both non-contact laser distance sensors and video cameras,used in additive manufacturing and medicine.

关键词： plasma processing point cloud robot manipulator surface segmentation three-dimensional(3D)scanning

Carbide Coating Preparation of Hot Forging Die by plasma processing

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Journal of Wuhan University of Technology(Materials Science) 2012年第6期27卷 1110-1114页

作者：杜文华 DU Cong WANG Huachang WANG Hongfu WANG Junyuan School of Mechanical Engineering and Automation North University of China School of Materials Science and Engineering Wuhan University of TechnologyWuhan 430070China

To meet the performance requirements of hot forging die heat resistant layer, the Ni60-SiC coating, Ni60-Cr3C2 coating, and Ni60-WC coating were prepared using W6Mo5Cr4V2 as substrate material with 30%SiC, 10%Cr3C2, 30%WC powder by means of plasma spraying and plasma spray re-melting and plasma spray welding, respectively. Microstructure of each carbide coating was analyzed, micro-hardness was tested, and mainly thermal parameters of coating were detected. The experimental results show that using plasma spray welding, the performance of 70%Ni60/30%SiC powder is the best, and its micro-hardness can achieved 1100HV, showing good thermal-physical property.

关键词： hot forging die plasma processing Ni60-SiC Ni60-Cr3C2 Ni60-WC

Enhancing bifunctionality of CoN nanowires by Mn doping for long-lasting Zn-air batteries

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Science China Chemistry 2020年第7期63卷 890-896页

作者： Yongqi Zhang Bo Ouyang Guankui Long Hua Tan Zhe Wang Zheng Zhang Weibo Gao Rajdeep Singh Rawat Hong Jin Fan School of Physical and Mathematical Sciences Nanyang Technological University21 Nanyang Link637371Singapore Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of ChinaChengdu 611731China Department of Applied Physics and Institution of Energy and Microstructure Nanjing University of Science and TechnologyNanjing 210094China Institute of Materials Research and Engineering A*STAR(Agency fo r ScienceTechnology and Research)Innovis 138634Singapore Natural Sciences and Science Education National Institute of EducationNanyang Technological UniversitySingapore 637616Singapore

Tailoring the nanostructure and composition of transition metal nitrides is highly important for their use as potent low-cost electrocatalysts. Cobalt nitride(CoN) exhibits strong catalytic activity for oxygen evolution reaction(OER). However, its poor catalytic efficiency for oxygen reduction reaction(ORR) hinders its application in rechargeable zinc-air batteries(ZABs) as the air cathode. In this work, we deploy the effective strategy of Mn doping to improve both OER and ORR activity of CoN nanowires as the cathode material for ZAB. Theoretical calculation predicts that moderate Mn doping in cobalt nitride results in a downshift of the d-band center and reduces the adsorption energy of reaction intermediates. With ~10 at% Mn dopants, stronger catalysis activities for both OER and ORR are achieved compared to pure CoN nanowires. Subsequently, both aqueous and flexible quasi-solid-state ZABs are constructed using the Mn-doped CoN nanowires array as additive-free air cathode. Both types of devices present large open circuit potential, high power density and long-cycle stability. This work pushes forward the progress in developing cost-effective ZABs.

关键词： bifunctional electrocatalyst Zn-air battery oxygen reduction reaction flexible battery plasma processing

Dynamic active sites on plasma engraved Ni hydroxide for enhanced electro-catalytic urea oxidation

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Journal of Energy Chemistry 2022年第8期31卷 150-158,I0005页

作者： Dan Li Yuefeng Zhang Xiaomin Zhou Chao Huang Ying Wen Liangliang Liu Qingwei Li Yue Xu Yuzheng Wu Qingdong Ruan Yinghe Ma Fangyu Xiong Dezhi Xiao Pei Liu Guomin Wang Babak Mehrjou Bin Wang Hao Li Rongsheng Chen Hongwei Ni Zhiyuan Zeng Paul K.Chu Department of Physics Department of Materials Science and Engineeringand Department of Biomedical EngineeringCity University of Hong KongTat Chee AvenueKowloon 999077Hong KongChina The State Key Laboratory of Refractories and Metallurgy Wuhan University of Science and TechnologyWuhan 430081HubeiChina Catalysis Theory Center Department of PhysicsTechnical University of Denmark2800 Kongens LyngbyDenmark

The urea oxidization reaction(UOR)is an important anodic reaction in electro-catalytic energy ***,the sluggish reaction kinetics and complex catalyst transformation in electrocatalysis require activity improvement and better mechanistic understanding of the state-of-the-art Ni(OH)_(2) ***,by utilizing low-temperature argon(Ar)plasma processing,tooth-wheel Ni(OH)_(2) nanosheets self-supported on Ni foam(Ni(OH)_(2)-Ar)are demonstrated to have improved UOR activity compared to conventional Ni(OH)_(2).The theoretical assessment confirms that the edge has a smaller cation vacancy formation energy than the basal plane,consequently explaining the structural *** and quasi-operando methods are employed to investigate the dynamic evolution of the Ni(OH)_(2) film in *** crucial dehydrogenation products of Ni(OH)_(5)O^(-)intermediates are identified to be stable on the etched edge and explain the enhanced UOR in the low potential *** addition,the dynamic active sites are monitored to elucidate the reaction mechanism in different potential ranges.

关键词： Urea oxidization reaction Ni hydroxide plasma processing Dehydrogenation Active site

Modeling of Pulsed Direct-Current Glow Discharge

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plasma Science and Technology 2010年第4期12卷 447-451页

作者：杜木郑亚茹范宇佳张楠刘成森王德真 College of Physics and Electronic Technology Liaoning Normal University State Key Laboratory for Materials Modification by Laser Ion and Electron Beams School of Physics and Optoelectronic Technology Dalian University of Technology

A self-consistent model was adopted to study the time evolution of low-voltage pulsed DC glow discharge. The distributions of electric field, ion density and electron density in nitrogen were investigated in our simulation, and the temporal shape of the discharge current was also obtained. Our results show that the dynamic behaviors of the discharge depends strongly on the applied pulse voltage, and the use of higher pulse voltages results in a significantly increase of discharge current and a decrease of discharge delay time. The current-voltage characteristic cMculated by adjusting secondary electron emission coefficient for different applied pulse voltage under the gas pressure of 1 Torr is found in a reasonable agreement with the experimental results.

关键词： pulsed direct-current glow discharge plasma processing plasma simulation

Luminescent Nanocrystalline Silicon Carbide Thin Film Deposited by Helicon Wave plasma Enhanced Chemical Vapour Deposition

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Chinese Journal of Aeronautics 2006年第B12期19卷 96-101页

作者： LU Wan-bing YU Wei WU Li-ping CUI Shuang-kui FU Guang-sheng College of Physics Science and Technology Hebei University Baoding 071002 China

Hydrogenated nanocrystalline silicon carbide （SIC） thin films were deposited on the single-crystal silicon substrate using the helicon wave plasma enhanced chemical vapor deposition （HW-PECVD） technique. The influences of magnetic field and hydrogen dilution ratio on the structures of SiC thin film were investigated with the atomic force microscopy （AFM）, the Fourier transform infrared absorption （FTIR） and the transmission electron microscopy （TEM）. The results indicate that the high plasma activity of the helicon wave mode proves to be a key factor to grow crystalline SiC thin films at a relative low substrate temperature. Also, the decrease in the grain sizes from the level of microcrystalline to that of nanocrystalline can be achieved by increasing the hydrogen dilution ratios. Transmission electron microscopy measurements reveal that the size of most nanocrystals in the film deposited under the higher hydrogen dilution ratios is smaller than the doubled Bohr radius of 3C-SiC （approximately 5.4 nm）, and the light emission measurements also show a strong blue photoluminescence at the room temperature, which is considered to be caused by the quantum confinement effect of small-sized SiC nanocrystals.

关键词： silicon carbide nanostructures plasma processing deposition