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Chinese Optics Letters 2011年第2期9卷 76-78页

作者：朱美萍易葵范正修邵建达 Key Laboratory of Materials for High Power Laser Shanghai Institute of Optics and Fine MechanicsChinese Academy of Sciences Graduate University of the Chinese Academy of Sciences

HfO2 and SiO2 single layer is deposited on glass substrate with plasma ion assistance provided by Leybold advanced plasma source （APS）. The deposition is performed with a bias voltage in the range of 70-130 V for HfO2, and 70-170 V for SiO2. Optical, structural, mechanical properties, as well as absorption and laser induced damage threshold at 1064 nm of HfO2 and SiO2 single layer deposited with the plasma ion assistance are systematically investigated. With the increase of APS bias voltage, coatings with higher refractive index, reduced surface roughness, and higher laser-induced damage threshold （LIDT） are obtained, and no significant change of the absorption at 1064 nm is observed. For HfO2, a bias voltage can be identified to achieve coatings without any stress. However, too-high bias voltage can cause the increase of surface roughness and stress, and decrease the LIDT. The bias voltage can be properly identified to achieve coatings with desired properties.

关键词： Absorption Coatings Hafnium compounds Ion beam assisted deposition Ions Laser damage Mechanical properties plasma deposition plasmas Refractive index Silicon compounds Substrates Surface properties Surface roughness

The high deposition of microcrystalline silicon thin film by very high frequency plasma enhanced chemical vapour deposition and the fabrication of solar cells

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Chinese Physics B 2008年第9期17卷 3464-3470页

作者：陈永生汪建华卢景霄郑文谷锦华杨仕娥郜小勇郭学军赵尚丽高哲 Institute of plasma Physics Chinese Academy of Sciences Key Laboratory of Material Physics Department of PhysicsZhengzhou University Department of Materials Science and Engineering Wuhan Institute of Technology

This paper reports that the intrinsic microcrystalline silicon （μc-Si：H） films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200℃ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88 nm/s is obtained by using a plasma excitation frequency of 75 MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with H2 prior to plasma ignition, and selecting proper discharging time after silane flow injection. Material prepared under these conditions at a deposition rate of 0.78nm/s maintains higher crystallinity and fine electronic properties. By H-plasma treatment before i-layer deposition, single junction μc-Si：H solar cells with 5.5% efficiency are fabricated.

关键词： chemical vapour deposition plasma deposition solar cells crystallinity

Direct Rapid Prototyping of Metal Parts by Hybrid of plasma deposition and Milling Machine

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Computer Aided Drafting,Design and Manufacturing 2006年第2期16卷 18-22页

作者： XIONG Xin-hong ZHANG Hai-ou WANG Gui-lan State Key Laboratory of Plastic Forming Simulation and Die and Mould Technology Huazhong University of Science and Technology Wuhan 430074 China

General principle and layout of the prototype machine is introduced. Primary results of producing a metal vase to investigate the proper selection of numerous technical parameters are presented.

关键词： direct manufacturing HPDM plasma deposition surface finishing metal part

Optical Characterization of Amorphous Hydrogenated Carbon(a-C:H)Thin Films Prepared by Single RF plasma Method

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plasma Science and Technology 2015年第6期17卷 488-495页

作者： Dogan MANSUROGLU Kadir GOKSEN Sinan BILIKMEN Physics Department Middle East Technical University Physics Department Duzce University

Methane （CH4） plasma was used to produce amorphous hydrogenated carbon （a- C：H） films by a single capacitively coupled radio frequency （RF） powered plasma system. The system consists of two parallel electrodes： the upper electrode is connected to 13.56 MHz RF power and the lower one is connected to the ground. Thin films were deposited on glass slides with different sizes and on silicon wafers. The influence of the plasma species on film characteristics was studied by changing the plasma parameters. The changes of plasma species during the deposition were investigated by optical emission spectroscopy （OES）. The structural and optical properties were analyzed via Fourier transform infrared （FTIR） spectroscopy, X-ray diffraction （XRD） and UV-visible spectroscopy, and the thicknesses of the samples were measured by a profilometer. The sp3/sp2 ratio and the existing H atoms play a significant role in the determination of the chemical properties of thin films in the plasma. The film quality and deposition rate were both increased by raising the power and the flow rate.

关键词： a-C：H thin film plasma deposition methane plasma sp3/sp2 ratio

Morphological and electrical properties of SrTiO3/TiO2/SrTiO3 sandwich structures prepared by plasma sputtering

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Chinese Physics B 2017年第1期26卷 156-159页

作者： Saqib Jabbar Riaz Ahmad Paul K Chu Government College University Lahore 54000 Pakistan Department of Physics and Materials Science City University of Hong Kong Kowloon Hong Kong China

SrTiO3（STO） and TiO2 are insulating materials with large dielectric constants and opposite signs of the quadratic coefficient of voltage（α）. Insertion of a TiO2 thin film between STO layers increases the linearity of the capacitance in response to an applied voltage, to meet the increasing demand of large-capacitance-density dynamic random access memory capacitors. Both STO and TiO2 suffer from the problem of high leakage current owing to their almost equivalent and low bandgap energies. To overcome this, the thickness of the thin TiO2 film sandwiched between the STO films was varied. A magnetron sputtering system equipped with radio frequency and direct current power supply was employed for depositing the thin films. Ti N was deposited as the top and bottom metal electrodes to form a metal–insulator metal（MIM） structure,which exhibited a very large linear capacitance density of 21 fF/um-2 that decreased by increasing the thickness of the TiO2 film. The leakage current decreased with an increase in the thickness of TiO2, and for a 27-nm-thick film, the measured leakage current was 2.0 × 10^-10 A. X-ray diffraction and Raman spectroscopy revealed that Ti N, STO, and TiO2 films are crystalline and TiO2 has a dominant anatese phase structure.

关键词： strontium titanate Raman spectroscopy plasma deposition MIM capacitor

Investigation of three steps of hot corrosion process in Y_2O_3 stabilized ZrO_2 coatings including nano zones

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Journal of Rare Earths 2014年第10期32卷 989-1002页

作者： Mohammadreza Daroonparvar Muhamad Azizi Mat Yajid Noordin Mohd Yusof Hamid Reza BakhsheshiRad Esah Hamzah Mohsen Nazoktabar Department of Materials Manufacturing and Industrial EngineeringFaculty of Mechanical EngineeringUniversiti Teknologi Malaysia Department of Mechanical Engineering Faculty of EngineeringRoudehen Islamic Azad University

Phase transformation of tetragonal ZrO2 to monoclinic phase and also increment of bond coat oxidation kinetic（TGO thickening） can substantially restrict the life time of thermal barrier coating systems（TBCs）. So, nanostructured and conventional Y2O3 stabilized ZrO2 coatings were evaluated in fused V2O5-Na2SO4 salts during thermal exposure in air. Microstructural characterization showed lower hot corrosion products（monoclinic zirconia, YVO4 crystals） formation and reduction of TGO thickness in thermal barrier coating system consisting of nanostructured Y2O3 stabilized ZrO2（YSZ） top coat. It was found that inhomogeneities, pores and micro-cracks played a principal role in the molten salts infiltration into the YSZ coating during three steps of hot corrosion process. In the nanostructured YSZ coating with tri-model structure, nano zones which surrounded by fully molten parts could fill the aforementioned defects and could act as barrier for the oxygen and corrosive molten salts penetration into the TBC.

关键词： nano zones plasma deposition diffusion oxidation rare earths

Luminescent-wavelength tailoring silicon-rich silicon nitride LED

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Chinese Optics Letters 2009年第4期7卷 277-279页

作者：林政道劉致爲林恭如 Graduate Institute of Photonics and Optoelectronics Department of Electrical EngineeringNational Taiwan University

Wavelength tunable photoluminescence （PL） of Si-rich silicon nitride （SRSN） film with buried Si nanocrystals （Si-ncs） grown by plasma enhanced chemical vapor deposition （PECVD） under Sill4 and NH3 environment is investigated. Intense broadband visible emissions tunable from blue to red can be obtained from the as-deposited SiNs thin films with increasing NH3 flow rate from 150 to 250 sccm and detuning the SiH4/NH3 flow ratio during deposition. To date, the normalized PL wavelength of SiNx films after anneal- ing could be detuned over the range of 385-675 nm by decreasing the NH3 flow rate, corresponding to an enlargement on Si-nc size from 1.5-2 to 4-5 nm. The PL linewidth is decreased with increasing ammonia flow rate due to the improved uniformity of Si-ncs under high NH3 flow rate condition. In addition, the PL intensity is monotonically increasing with the blue shift of PL wavelength due to the increasing density of small-size Si-ncs. The ITO/SiNx/p-Si/Al diode reveals highly resistive property with the turn-on voltage and power-voltage slope of only 20 V and 0.18 nW/V, respectively. The turn-on voltage can further reduce from 20 to 3.8 V by improving the carrier injection efficiency with p-type Si nano-rods.

关键词： Flow rate Light emitting diodes Nanocrystals plasma deposition Silanes Silicon Silicon nitride

Effects of bond coat and top coat(including nano zones) structures on morphology and type of formed transient stage oxides at pre-heat treated nano NiCrAlY/nano ZrO_2-8%Y_2O_3 interface during oxidation

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Journal of Rare Earths 2015年第9期33卷 983-994页

作者： Mohammadreza Daroonparvar Department of Materials Engineering Faculty of Engineering Azad UniversityRoudehen Branch

Bond coat geometry is able to significantly influence thermally grown oxide （TGO） layer formation and growth in thermal barrier coating systems at the onset of oxidation. Moreover, nanostructured yttria stabilized zirconia coating with three model structure （including nano zones） could reduce oxygen partial pressure to the formation pressure of continues alumina oxide scale which was able to protect the substrate from extra oxidation and corrosion. Thus, nano NiCrA1Y/nano YSZ and normal NiCrA1Y/nano YSZ coatings were prepared by air plasma spray method and then evaluated by high temperature oxidation test at 1000℃ for 160 h. As-sprayed samples were also pre-oxidized at 1000 ℃ for 48 h and then examined by electrochemical polarization test. The corrosion rate of the pre-oxidized nano NiCrA1Y/nano YSZ coating was estimated to be the lowest compared to that of the other samples. It might be related to the formation of continues alumina layer on the nano NiCrA1Y at the onset of oxidation. This continuous layer could reduce the penetration of the aggressive solution into the NiCrA1Y coating and acted as a protective layer （with the lowest anodie current density）. This layer also lessened TGO growth rate at the stages Ⅱ and Ⅲ of the growth.

关键词： ceramics plasma deposition X-ray diffraction diffusion rare earths

plasma processing:Controlling complexity through in situ analysis

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Plasma processing:Controlling complexity through in situ ana...

Effective Young’s modulus measurement of plasma-polymerized allylamine films under humidity ambient

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作者： M.C.M. van de Sanden Group plasma & Materials Processing Department of Applied PhysicsTechnische Universiteit EindhovenP.O.Box 5135600 MBEindhovenThe Netherlands

plasmas, a complex non-equilibrium medium which contains apart from neutral particles, free electrons, (molecular) ions, radicals and excited atoms and molecules, are widely used for

关键词： plasma deposition plasma diagnostics plasma-surface interaction in situ film diagnostics

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Effective Young’s modulus measurement of plasma-polymerized...