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Revealing the crystallization process and realizing uniform 1.8 eV MA-based wide-bandgap mixed-halide perovskites via solution engineering

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Nano Research 2019年第5期12卷 1033-1039页

作者： Yue-Min Xie Chunqing Ma Xiuwen Xu Menglin Li Yuhui Ma Jing Wang Hrisheekesh Thachoth Chandran Chun-Sing Lee Sai-Wing Tsang Department of Materials Science and Engineering City University of Hong KongHong Kong SARChina City University of Hong Kong Shenzhen Research Institute Shenzhen 518057China Center of Super-Diamond and Advanced Films (COSDAF) City University of Hong KongHong Kong SARChina

Wide-bandgap perovskites are recently drawing tremendous attention in the community for high-efficiency all-perovskite tandem solar ***,the formamidinium (FA^+) and methylammonium (MA^+) based wide-bandgap mixed halide perovskites suffered from high density of traps and pin-holes,*** understanding on the crystallization and film formation processes are keys to overcome those challenges but not yet clearly *** this study,an in-situ photoluminescence technique was used to investigate the perovskite crystallization during the thermal annealing *** is found that the crystallization of a mixed halide perovskite with bromide (Br^-) and iodine (I^-) ions following the Ostward ripening crystal ***,it is found that the initial nucleation reaction is quickly completed in the first few seconds,however,leaving the small crystals with inhomogeneous *** different aggregation affinities of such inhomogeneous small crystals provoke the formation of pin-holes during the thermal annealing *** engineering the precursor solution to control the nucleation rate,the chemical composition of the small crystals has become *** pin-hole free high Br-composited wide-bandgap MA0.9Cs0.1Pb(I0.6Br0.4)3 perovskite films with bandgap energy of 1.8 eV have been *** corresponding photovoltaic devices have achieved an encouraging device efficiency of 15.1% with superb photostability.

关键词： in-situ photoluminance wide-bandgap perovskite pin-holes solution engineering

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