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METHOD FOR MEASURING RESISTANCE OF METALS IN DIAMOND ANVIL CELL AND THE MEASUREMENT OF piezoresistance COEFFICIENT OF MANCANIN

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Science China Mathematics 1991年第11期34卷 1339-1345页

作者：蒲丰年丁玉珍苟清泉 Institute of High Temperature and High Pressure Physics Chengdu University of Science and Technology Chengdu 610065 PRC

With an experimental method developed for measuring the electrical resistance of met-als in diamond anvil cell （DAC）, we measured the pressure dependence of resistance ofmanganin up to 18.5 GPa. The relationship between the resistance of manganin and thepressure is linear below 13 GPa. Another linear relationship is obtained in the range of 13-18.5 GPa. A "turning point" of linear relation is formed at 13 GPa. The piezoresistancecoefficient of manganin measured is 0.024 GPa1 below 13 GPa, which is in good agreementwith those given in literature. A new resistance-pressure relation is obtained in the rangeof 13～18.5 GPa. with the piezoresistance coefficient of 0.020 GPa-1.

关键词： diamond anvil cell manganin piezoresistance coefficient.

LARGE　piezoresistance　AND　PRESSURE－INDUCED　METAL－SEMICONDUCTOR　TRANSISTION　IN　THE　PEROVSKITE－LIKE　La－Ar－Mn－O

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南京大学学报(自然科学) 1996年第4期 140-142页

作者： Zhang Ning 1),2) Ding Weiping 1) ,Chen Ying 1) Gao Rong 2) Du Youwei 1) Xing Dingyu 1) Feng Duang 1) (1) National Laboratory of Solid State Microstructures,Nanjing University,210093,Nanjing,PRC 2) Departmen

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关键词： piezoresistance Magnetism Transporation

Regulation of sulfur vacancies in vertical nanolamellar MoS_(2)for ultrathin flexible piezoresistive strain sensors

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Journal of Materials Science & Technology 2023年第10期141卷 56-65页

作者： Xing Pang Qi Zhang Yulong Zhao Xiaoya Liang Lukang Wang Yiwei Shao State Key Laboratory for Manufacturing Systems Engineering Xi’an Jiaotong UniversityXi’an 710049China

Magnetron-sputtered MoS_(2) has applications in piezoresistive functional materials research owing to its unique nanostructure.However,the controlled incorporation of sulfur vacancies and realization of en-hanced piezoresistive performance remain significant challenges.In this work,the direct growth of large-area MoS_(2) films with tunable sulfur vacancy concentrations was successfully achieved via magnetron sputtering at various temperatures.Microstructural analysis revealed that the application of strain al-tered the number of conductive channels between the vertical MoS_(2) nanosheets,changing the measured resistance and leading to excellent piezoresistive properties.More importantly,the unsaturated electrons due to the sulfur vacancies increased the in-plane carrier concentration of the MoS_(2)nanosheets.A de-position temperature of 50℃afforded the highest concentrations of sulfur vacancies and carriers.These MoS_(2)films possessed a carrier concentration of 6.58×10^(17)cm^(−3),which was 40.9%higher than that ob-tained at 150°C,and displayed superior piezoresistive performance.The films exhibited high gage factors of 2.66 and 23.22 under tensile and compressive strain of≤0.29%,respectively.These values were 118%and 323%higher,respectively,than those obtained for films deposited at 150°C.This work provides an effective route for modulating and mass producing MoS_(2)-based piezoresistive electronic devices.

关键词： MoS_(2) Sulfur vacancy Electron transport piezoresistance Sensors

High-Performance Single-Side Fabricated (111)-Silicon Dual-Cantilever Accelerometer with Squeeze-Film Air Damping Modulation

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Journal of Shanghai Jiaotong university(Science) 2023年第2期28卷 197-206页

作者：焦鼎倪藻王家畴李昕欣 State Key Laboratory of Transducer Technology Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China School of Microelectronics University of Chinese Academy of SciencesBeijing 100049China

This study proposes a novel design and micromachining process for a dual-cantilever accelerometer.Comb and curved-surface structures are integrated into the sensing structure to modulate the squeeze-film damping,thus effectively optimizing the response frequency bandwidth.Owing to the high stress concentration on the dual-cantilever integrated with a fully sensitive piezoresistive Wheatstone bridge,a high sensitivity to acceleration is achieved.In addition,the dual-cantilever accelerometer is fabricated using a specifically developed low-cost and high-yield(111)-silicon single-side bulk-micromachining process.The test results show that the proposed dualcantilever accelerometer exhibits a sensitivity of 0.086—0.088 mV/g/3.3 V and a nonlinearity of±(0.09%—0.23%)FS(full-scale).Based on dynamic characterization,an adequate frequency bandwidth of 2.64 kHz is verified.Furthermore,a resonant frequency of 4.388 kHz is measured,and a low quality factor(Q)of 7.62 is obtained,which agrees well with the design for air-damping modulation.The achieved high performance renders the proposed dual-cantilever accelerometer promising in applications such as automotive and consumer electronics.

关键词： accelerometer cantilever piezoresistance micromachining squeeze-film damping

ITO纳米晶-植物纤维复合材料的电阻式压力传感器

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中国科学:材料科学(英文版) 2023年第10期66卷 3922-3930页

作者：夏亿劼黄鹏举林心铭吴鲁超李珂高晨溟钟高余 School of Mechanical Engineering University of Shanghai for Science and TechnologyShanghai 200093China Department of Materials Science Fudan UniversityShanghai 200433China

可穿戴电子设备因其在机器人触觉、人机交互和脉搏测试等领域具有潜在应用而引起广泛关注.作为一种可穿戴电子设备,柔性压力传感器应该是环保的,而且制造成本低.基于纤维素纸的压力传感器由于其优良的特性,如轻质、无毒或低毒、可降解... 详细信息

可穿戴电子设备因其在机器人触觉、人机交互和脉搏测试等领域具有潜在应用而引起广泛关注.作为一种可穿戴电子设备,柔性压力传感器应该是环保的,而且制造成本低.基于纤维素纸的压力传感器由于其优良的特性,如轻质、无毒或低毒、可降解性和柔韧性,而引起了人们的关注.在此,我们报道了一种基于铟锡氧化物(ITO)纳米晶体和植物纤维复合材料的电阻式触觉传感器.该压力传感器具有宽的检测范围(0-100 kPa)、高灵敏度(464.88 kPa^(-1))、快速的响应时间(6.93 ms)和恢复时间(7.18 ms)以及良好的加载/卸载稳定性.我们还展示了该压力传感器用于脉搏测试、呼吸监测、语音识别等各种人体运动检测.结果表明,ITO纳米晶-植物纤维复合材料压力传感器在智能可穿戴电子产品中显示出巨大应用潜力.

关键词： pressure sensors piezoresistance nanocrystalline composite

MPa uniaxial pressure-induced giant lattice compression and change of electric and magnetic properties in perovskite La_0.83Sr_0.17MnO_3

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Science China Mathematics 1997年第12期40卷 1311-1316页

作者：张宁丁维平李钢钟伟都有为 Key Laboratory of Jiangsu Province for Optic & Electric Techniques Nanjing Normual UniversityNanjing 210097China National Laboratoryof Solid State MicrostructuresNanjing UniversityNanjing 210093China National Laboratoryof Solid State Microstructures Nanjing UniversityNanjing 210093China Key Laboratory of Jiangsu Province for Optic & Electric Techniques Nanjing Normual UniversityNanjing 210097China

Using a method of in situ pressing X-ray diffraction,a uniaxial pressure-induced unusual change of lattice parameters and a remarkable crystal structural distortion have been observed in CMR perovskite La0.83Sr0.17-MnO3.The pressure coefficient of lattice parameter in [200] orientation,i.e.d(1ndMn-O-Mn)/dP can reach about 3.8×10-4 MPa-1.Under the uniaxial pressure of only about 20 MPa,a giant piezoresistance,magnetization enhancing and an evident increase of Tp,the onset of the metal-semiconductor-like (M-S) transition,have also been obtained.These effects suggest that the structure of CMR perovskite is very flexible and their transport properties are very structurally sensitive.

关键词： crystal distortion piezoresistance magnetoresistance piezomagnetization.

Bending-Induced Conductance Increase in Individual Semiconductor Nanowires and Nanobelts

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Nano Research 2009年第7期2卷 553-557页

作者： Xiaobing Han Guangyin Jing Xinzheng Zhang Renmin Ma Xuefeng Song Jun Xu Zhimin Liao NingWang Dapeng Yu State Key Laboratory for Mesoscopic Physics and Electron Microscopy LaboratoryDepartment of PhysicsPeking UniversityBeijing 100871China Physics Department Hong Kong University of Science and TechnologyHong KongChina

Reliable ohmic contacts were established in order to study the strain sensitivity of nanowires and nanobelts.Significant conductance increases of up to 113%were observed on bending individual ZnO nanowires or CdS nanobelts.This bending strain-induced conductance enhancement was confirmed by a variety of bending measurements,such as using different manipulating tips(silicon,glass or tungsten)to bend the nanowires or nanobelts,and is explained by bending-induced effective tensile strain based on the principle of the piezoresistance effect.

关键词： ZnO nanowires bending strain piezoresistance conductance enhancement

Nanosensitive Silicon Microprobes for Mechanical Detection and Measurements

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Materials Sciences and Applications 2011年第6期2卷 582-591页

作者： Jan M.Lysko Piotr Dumania Pawel Janus Miroslaw Grodner Helena Klos Karina Skwara Piotr Grabiec Institute of Electron Technology WarsawPoland

Nanosensitive mechanical microprobes with CMOS transistors, inverters, inverters cascades and ring oscillators, integrated on the thin silicon cantilevers are presented. Mechanical stress shifts linear, steep switching fragment of the inverters’ electrical characteristics. Microprobes were fabricated with use of the standard CMOS technology (3.5 μm design rules, one level polysilicon gate and one level of the metal interconnections) and relief MEMS technique. Control of the silicon cantilever thickness was satisfactory in the range above the few micrometers. Several computer simulations were done to analyze and optimize transistors location on the cantilever, in respect to the mechanical stress distribution. Results of the microprobes electromechanical tests confirm high deflection sensitivity 1.2 - 1.8 mV/nm and force sensitivity 2.0 - 2.4 mV/nN, both in nano ranges. Microprobes, with the ring oscillators revealed sensitivities 5 - 8 Hz/nm. These microprobes seem to be appropriate for applications in precise chemical and biochemical sensing.

关键词： Force Deflection Probe Mos Transistor Inverter Ring Oscillator piezoresistance

Fast Transient Simulation of Output Voltage for Piezoresistive Microaccelerometers Using Model Order Reduction 7th

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Fast Transient Simulation of Output Voltage for Piezoresisti...