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Smart Grid and Renewable Energy 2018年第12期9卷 285-298页

作者： Adama Ouedraogo Serge Dimitri Y. B. Bazyomo Salifou Ouedraogo Abdoul Razakou Dieudonné Joseph Bathiebo National Authority for Radiation Protection and Nuclear Safety Ministry of Environment of Burkina Faso Ouagadougou Burkina Faso Laboratory of Thermal and Renewable Energies Department of Physics Unit of Training and Research in Pure and Applied Sciences University of Ouaga 1 Prof. Joseph KI-ZERBO Ouagadougou Burkina Faso

This manuscript is about a theoretical modelling of conversion efficiency improvement of a typical polycrystalline Si solar cell in 1D assumptions. The improvement is brought by the increase of the collection of the minority carriers charge in excess. This increase is the consequence of the influence of an electric field provided by the use of the open circuit photovoltage of another silicon solar cell. We assume that it is integrated two silicon solar cells to the system. The first solar cell provides the open circuit photovoltage which is connected to two aluminum planar armatures creating a planar capacitor. The second solar cell is placed under the uniform electric field created between the two aluminum armatures. This work has shown an improvement of the output electric power leading to the increase of the conversion efficiency. We observe an increase of 0.7% of the conversion efficiency of the second silicon solar cell.

关键词： Open Circuit photovoltage Planar Capacitor Electric Field Conversion Efficiency Monochromatic Illumination and Silicon Solar Cell

Investigation of Localized Transition of MEH-PPV by SPS

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Semiconductor Photonics and Technology 2002年第3期8卷 145-149,165页

作者： KANG Bo nan 1, HUANG Zong hao 2, XIE Teng feng 5, CHEN Li chun 3, WANG De jun 5, CHANG Yu chun 1, LIU Yang 1, SONG Jun feng 1, WANG Rong shun 2, CHANG R P H 4, DU Guo tong 1 (1.State Key Lab. on Integrated Optoelectron., Jilin U Jilin University Region State Key Lab. on Integrated Optoelectron. Changchun 130023 Dept. of Chemistry Northeast Normal University Changchun 130024 Dept. of Chemistry Jilin University Changchun 130023 Institute of Material Physics Tianjin Institute of Technology 天津 300191 Material Research Center Northwestern University 美国 Evanston IL 60208-3108

The investigations of surface photovoltage spectra are performed on thin films of poly[2 methoxy 5 (2′ ethyl hexyloxy) 1, 4 phenylene vinylene] in order to determine its photoelectric properties. It is found that a localized subgap electronic transition causes a polarity opposite band to band electronic transition(π-π *). This transition results in an electronic level transition from the valence band to a local state in the conduction band.

关键词： MEH-PPV Surface photovoltage Local state

Impact of the Thicknesses of the p and p+ Regions on the Electrical Parameters of a Bifacial PV Cell

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Energy and Power Engineering 2022年第2期14卷 133-145页

作者： Ramatou Konate Bernard Zouma Adama Ouedraogo Bruno Korgo Martial Zoungrana Sié Kam Laboratoire d’Energies Thermiques REnouvelables (L.E.T.RE) Département de Physique Unité de Recherche et de Formation en Sciences Exactes et Appliquées Université Joseph KI-ZERBO Ouagadougou Burkina Faso Centre Universitaire Polytechnique de Kaya (CUP-Kaya) Kaya Burkina Faso

The present paper is about a contribution to the bifacial PV cell performances improvement. The PV cell efficiency is weak compared to the strong energy demand. In this study, the base thickness impacts and the p+ zone size influence are evaluated on the rear face of the polycrystalline back surface field bifacial silicon PV cell. The photocurrent density and photovoltage behaviors versus thickness of these regions are studied. From a three-dimensional grain of the polycrystalline bifacial PV cell, the magneto-transport and continuity equations of excess minority carriers are solved to find the expression of the density of excess minority carriers and the related electrical parameters, such as the photocurrent density, the photovoltage and the electric power for simultaneous illumination on both sides. The photocurrent density, the photovoltage and electric power versus junction dynamic velocity decrease for different thicknesses of base and the p+ region increases for simultaneous illumination on both sides. It is found that the thickness of the p+ region at 0.1 μm and the base size at 100 μm allow reaching the best bifacial PV cell performances. Consequently, it is imperative to consider the reduction in the thickness of the bifacial PV cell for exhibition of better performance. This reduced the costs and increase production speed while increasing conversion efficiency.

关键词： Doped p+ Region Bifacial PV Cell Photocurrent Density photovoltage Polycrystalline Solar Cell

Influence of a Semiconductor Gap’s Energy on the Electrical Parameters of a Parallel Vertical Junction Photocell

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Energy and Power Engineering 2015年第5期7卷 203-208页

作者： Nfally Dieme Laboratory of Semiconductors and Solar Energy Department of Physics Faculty of Science and Technology Cheikh Anta Diop University Dakar Senegal

The present work is a theoretical study on a parallel vertical junction solar cell under a multi-spectral illumination in static regime. The density of the minority charge carriers was determined based on the diffusion equation. Photocurrent and photovoltage are deducted from such density. All these parameters are studied taking into account the influence of the gap energy (Eg).

关键词： Vertical Junction Energy Gap Photocurrent Density photovoltage

Two-Dimensional Finite Element Method Analysis Effect of the Recombination Velocity at the Grain Boundaries on the Characteristics of a Polycrystalline Silicon Solar Cell

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Circuits and Systems 2016年第13期7卷 4186-4200页

作者： Nzonzolo Désiré Lilonga-Boyenga Camille Nziengui Mabika Grégoire Sissoko Electronics and Electrical Engineering Laboratory Polytechnic Superior National School University Marien Ngouabi Brazzaville Republic of the Congo Laboratory of Semiconductors and Solar Energy Physics Department Faculty of Science and Technology University Cheikh Anta Diop Dakar Senegal

To take into account the variation of the recombination velocity at the grain boundaries, we present in this paper a new approach of characterization of the solar cells, based on the two dimensional finite element method. The results of this study on a bifacial polycrystalline silicon solar cell, modelled in the rectangular form, highlighting the effects of the boundary recombination velocity (Sgb) on the solar cell electrical parameters. The photogenerated excess carrier’s density, the photocurrent density;the phototovoltage and the current-voltage characteristics are analyzed, namely. A good agreement with the results given in the literature is observed.

关键词： Solar Cell Grain Boundary Photocurrent photovoltage Recombination Velocity Finite Element

PULSED LASER-INDUCED TRANSIENT SUAFACE PHOTOVOLTAIC TECHNIQUE FOR STUDYING THE INTERFACIAL CHARGE TRANSFER PROCESSES

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Chinese Journal of Lasers 1992年第1期 75-78页

作者： Li SAN, Haosheng FEI, Li LI and Jie LUDepartment of Phyaica, Jilin University, Changchun 130023, ChinaLei JIANG-, Wang LIU and Tiejin LIDepartment of Chemistry, Jilin University, OhaHgchun 130023, Ohina

In this paper,the processes of the interfacial charge transfer between theP-Si(111) and CuTsPc supramolecular film(L-B)have been directly observed by usinga pulsed laser-induced transient surface photovoltaic techniqu... 详细信息

关键词： photovoltage transient process charge transfer process.