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photoelectrochemical etching of uniform macropore array on full 5-inch silicon wafers

Journal of Semiconductors 2010年第7期31卷 156-160页

作者：赵志刚郭金川雷耀虎牛憨笨 Institute of Optoelectronics Engineering Shenzhen University Institute of Optoelectronics Science and Engineering Huazhong University of Science and Technology

We analyze the two main factors causing non-uniformity of the etched macropore array first,and then a novel photoelectrochemical etching setup for large area silicon wafers is *** etching setup refined typical etching setups by a water cooling system and a shower-head shaped electrolyte *** results showed that the uniform macropore array on full 5-inch n-type silicon wafers could be fabricated by this etching *** morphology of the macropore array can be controlled by adjusting the corresponding etching parameters.

关键词： photoelectrochemical etching macropore array large area non-uniformity current density

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Effect of Different etching Time on Fabrication of an Optoelectronic Device Based on GaN/Psi

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Journal of Renewable Materials 2023年第3期11卷 1101-1122页

作者： Haneen D.Jabbar Makram A.Fakhri Mohammed Jalal Abdul Razzaq Omar S.Dahham Evan T.Salim Forat H.Alsultany U.Hashim Laser and Optoelectronic Engineering Department University of Technology-IraqBaghdadIraq Department of Civil Engineering College of EngineeringCihan University-ErbilKurdistan RegionIraq Department of Petroleum and Gas Refinery Engineering Al-Farabi University CollageBaghdadIraq Applied Science Department University of Technology-IraqBaghdadIraq Department of Medical Physics Al-Mustaqbal University CollegeBabylonIraq Institute of Nano Electronic Engineering University Malaysia PerlisKangarPerlisMalaysia

Gallium nitride(GaN)/porous silicon(PSi)film was prepared using a pulsed laser deposition method and 1064 nm Nd:YAG laser for optoelectronic applications and a series of Psi substrates were fabricated using a photoelectrochemical etching method assisted by laser at different etching times for 2.5–15 min at 2.5 min intervals.X-ray diffraction,room-temperature photoluminescence,atomic force microscopy and field emission scanning electron microscopy images,and electrical characteristics in the prepared GaN on the Psi film were *** optimum Psi substrate was obtained under the following conditions:10 min,10 mA/cm^(2),and 24%hydrofluoric *** substrate exhibited two highly cubic crystalline structures at(200)and(400)orientations and yellow visible band photoluminescence,and homogeneous pores formed over the entire *** pores had steep oval shapes and were accompanied by small dark pores that appeared topographically and *** GaN/Psi film fabricated through PLD exhibited a high and hexagonal crystallographic texture in the(002)*** properties results revealed that the photoluminescence emission of the deposited nano-GaN films was in the ultraviolet band(374 nm)related to GaN material and in the near-infrared band(730 nm)related to the Psi *** topographical and morphological results of the GaN films confirmed that the deposited film contained spherical grains with an average diameter of 51.8 nm and surface roughness of 4.8 *** GaN/Psi surface showed a cauliflower-like morphology,and the built-in voltage decreased from 3.4 to 2.7 eV after *** fabricated GaN/Psi film exhibited good electrical characteristics.

关键词： Gallium nitride porous silicon photoelectrochemical etching pulsed laser deposition optical device

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Precise photoelectrochemical tuning of semiconductor microdisk lasers

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Advanced Photonics 2023年第5期5卷 68-76页

作者： Debarghya Sarkar Paul HDannenberg Nicola Martino Kwon-Hyeon Kim Yue Wu Seok-Hyun Yun Harvard Medical School BostonMassachusettsUnited States Massachusetts General Hospital Wellman Center for PhotomedicineBostonMassachusettsUnited States Massachusetts Institute of Technology Harvard-MIT Health Sciences and TechnologyCambridgeMassachusettsUnited States

Micro-and nanodisk lasers have emerged as promising optical sources and probes for on-chip and free-space ***,the randomness in disk diameter introduced by standard nanofabrication makes it challenging to obtain deterministic *** address this,we developed a photoelectrochemical(PEC)etching-based technique that enables us to precisely tune the lasing wavelength with subnanometer *** examined the PEC mechanism and compound semiconductor etching rate in diluted sulfuric acid *** this technique,we produced microlasers on a chip and isolated particles with distinct lasing *** precisely tuned disk lasers were then used to tag cells in *** results demonstrate that this scalable technique can be used to produce groups of lasers with precise emission wavelengths for various nanophotonic and biomedical applications.

关键词： microdisk lasers semiconductor precision lasing photoelectrochemical etching laser particle nanophotonics

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