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Regulating Effect of Substrate Temperature on Sputteringgrown Ge/Si QDs under Low Ge Deposition

Journal of Wuhan University of Technology(Materials Science) 2024年第4期39卷 888-894页

作者：舒启江 YANG Linjing LIU Hongxing 黄鹏儒 Institute of Information Yunnan University of Chinese MedicineKunming 650500China Guangxi Key Laboratory of Information Materials and Guangxi Collaborative Innovation Center of Structure and Property for New Energy and Materials School of Material Science&EngineeringGuilin University of Electronic TechnologyGuilin 541004China

The effect of deposition temperature on the morphology and optoelectronic performance of Ge/Si QDs grown by magnetron sputtering under low Ge deposition(~4 nm)was investigated by atomic force microscopy,Raman spectroscopy,and photoluminescence(PL)*** experimental results indicate that temperatures higher than 750℃effectively increase the crystallization rate and surface smoothness of the Si buffer layer,and temperatures higher than 600℃significantly enhance the migration ability of Ge atoms,thus increasing the probability of Ge atoms meeting and nucleating to form QDs on Si buffer layer,but an excessively high temperature will cause the QDs to undergo an Ostwald ripening process and thus develop into super large *** addition,some PL peaks were observed in samples containing small-sized,high-density Ge QDs,the photoelectric properties reflected by these peaks were in good agreement with the corresponding structural characteristics of the grown *** results demonstrate the viability of preparing high-quality QDs by magnetron sputtering at high deposition rate,and the temperature effect is expected to work in conjunction with other controllable factors to further regulate QD growth,which paves an effective way for the industrial production of QDs that can be used in future devices.

关键词： Ge/Si QDs deposition temperatures evolution law photoelectric performance

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Molecular engineering of s-triazine and its derivatives applied in surface modification strategy for enhancing photoelectric performanc of all-inorganic perovskites

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Chinese Chemical Letters 2022年第1期33卷 547-550页

作者： Yifei Yue Shengnan Liu Ning Zhang Zhongmin Su Dongxia Zhu Key Laboratory of Nanobiosensing and Nanobioanalysis at Universities of Jilin Province Department of ChemistryNortheast Normal UniversityChangchun 130024China

We develop the effective modification strategy based on molecular engineering of s-triazine and its derivatives to improve the photoelectric performance of all-inorganic perovskites(AIP)for the first *** surface modification strategy with cyanuric acid successfully increases the PLQY of AIP from 40.55%to 88.15%,and significantly enhances the current of the AIP film under 3 V by almost 20-fold(from4.44 m A to 81.20 m A).This work has proven the effectiveness of improving the photoelectric performances of AIP via s-triazine and its derivatives and also suggested the potential risks of reducing the photoelectric performance of AIP due to inappropriate substituents in conjugated organic ligands.

关键词： All-inorganic perovskites Surface modification s-Triazine Substituents photoelectric performance

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