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Polymer: Non-fullerene acceptor heterojunction-based phototransistor for short-wave infrared photodetection

Nano Research 2024年第4期17卷 3087-3095页

作者： Jing Li Weigang Zhu Yang Han Yanhou Geng Wenping Hu Key Laboratory of Organic Integrated Circuits of Ministry of Education&Key Laboratory of Molecular Optoelectronic Sciences School of Science&Collaborative Innovation Center of Chemical Science and Engineering(Tianjin)Tianjin UniversityTianjin 300072China Key Laboratory of Organic Integrated Circuits of Ministry of Education&Key Laboratory of Molecular Optoelectronic Sciences School of Materials Science and EngineeringTianjin UniversityTianjin 300072China

It remains full of challenge for extending short-wave infrared(SWIR)spectral response and weak-light detection in the context of broad spectral responses for phototransistor.In this work,a novel poly(2,5-bis(4-hexyldodecyl)-2,5-dihydro-3,6-di-2-thienyl-pyrrolo[3,4-c]pyrrole-1,4-dione-alt-thiophene)(PDPPT3-HDO):COTIC-4F organic bulk-heterojunction is prepared as active layer for bulk heterojunction phototransistors.PDPPT3-HDO serves as a hole transport material,while COTIC-4F enhances the absorption of SWIR light to 1020 nm.As a result,smooth and connected PDPPT3-HDO film is fabricated by blade coating method and exhibits high hole mobility up to 2.34 cm^(2)·V^(-1)·s^(-1) with a current on/off ratio of 4.72×10^(5) in organic thin film transistors.PDPPT3-HDO:COTIC-4F heterojunction phototransistors exhibit high responsivity of 2680 A·W^(-1) to 900 nm and 815 A·W^(-1) to 1020 nm,with fast response time(rise time~20 ms and fall time~100 ms).The photosensitivity of the heterojunction phototransistor improves as the mass ratio of non-fullerene acceptors increases,resulting in an approximately two orders of magnitude enhancement compared to the bare polymer phototransistor.Importantly,the phototransistor exhibits decent responsivity even under ultra-weak light power of 43μW·cm^(-2) to 1020 nm.This work represents a highly effective and general strategy for fabricating efficient and sensitive SWIR light photodetectors.

关键词： photodetection phototransistor organic semiconductor heterojunction non-fullerene acceptor

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Thickness-dependent highly sensitive photodetection behavior of lead-free all-inorganic CsSnBr_(3) nanoplates

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Rare Metals 2022年第5期41卷 1753-1760页

作者： Dong Liu Yan-Xue Yin Feng-Jing Liu Cheng-Cheng Miao Xin-Ming Zhuang Zhi-Yong Pang Ming-Sheng Xu Ming Chen Zai-Xing Yang School of Physics State Key Laboratory of Crystal MaterialsSchool of MicroelectronicsShandong UniversityJinan 250100China

Non-layered two-dimensional(2D) lead-free all-inorganic perovskites nanoplates have recently attracted considerable attention in photodetectors;however, the indepth investigation of thickness on photodetection performance is still lacking. In this work, by constructing the famous metal-semiconductor-metal photodetectors, the photodetection behaviors of thickness-controlled CsSnBr;nanoplates are investigated systematically. Ni electrodes are adopted for ensuring the good ohmic contact behaviors of as-fabricated photodetectors. With the increase in thickness, the photodetection performances improve accordingly, such as photocurrent increases from 0.22 to 19.40 nA, responsivity increases from 72.9 to 4893.7 mA·W^(-1), rise/decay time decreases from 11/35 to 3/10 ms, respectively. Notability, the dark current also increases with the increase in thickness, making the further investigation on the reduction in dark current meaningful.All of the as-fabricated photodetectors are stable, suggesting the careful thickness selection in next-generation high-performance lead-free all-inorganic perovskites photodetectors.

关键词： Thickness photodetection Lead-free all-inorganic perovskites Non-layered two-dimensional perovskites CsSnBr3 nanoplates

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Wafer-scale patterned growth of type-II Dirac semimetal platinum ditelluride for sensitive room-temperature terahertz photodetection

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InfoMat 2023年第5期5卷 17-27页

作者： Zhuo Dong Wenzhi Yu Libo Zhang Liu Yang Luyi Huang Yan Zhang Zeqian Ren Haoran Mu Cheng Chen Junrong Zhang Jie Li Lin Wang Kai Zhang CAS Key Laboratory of Nanophotonic Materials and Devices&Key Laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics(SINANO)Chinese Academy of SciencesSuzhouJiangsuthe People's Republic of China School of Nano-Tech and Nano-Bionics University of Science and Technology of ChinaHefeiAnhuithe People's Republic of China Songshan Lake Materials Laboratory DongguanGuangdongthe People's Republic of China State Key Laboratory for Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghaithe People's Republic of China

As the lastly unexplored electromagnetic wave,terahertz(THz)radiation has been exploited in a plenty of contexts such as fundamental research,military and civil fields.Most recently,representative two-dimensional(2D)topological semimetal,platinum ditelluride(PtTe_(2))has attracted considerable research interest in THz detection due to its unique physical properties.However,to achieve practical applications,the low-cost,large-scale,controllable synthesis and efficient patterning of 2D materials are key requirements,which remain a challenge for PtTe_(2)and its photodetectors(PDs).Herein,a facile approach is developed to obtain waferscale(2-inches)patterned PtTe_(2)arrays using one-step tellurium-vapor transformation method and micro-Nano technology.PtTe_(2)PD arrays are fabricated with the as-grown PtTe_(2)arrays evenly distributed on a 2-inch wafer,exhibiting high conductivity(~2.7×105 S m^(-1))and good electrical consistency.Driven by the Dirac fermions,PtTe_(2)PDs achieve a broadband(0.02-0.3 THz)response with a fast response speed(~4.7μs),a high sensitivity(~47 pW Hz^(-1/2))and high-resolution transmission THz-imaging capability,which displays the potential of large-area THz array imaging.These results are one step towards the practical applications of integrated PD arrays based on 2D materials.

关键词： patterned growth photodetection platinum ditelluride terahertz wafer-scale

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Single-and few-layer 2H-SnS_(2)and 4H-SnS_(2) nanosheets for high-performance photodetection

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Chinese Chemical Letters 2022年第5期33卷 2611-2616页

作者： Lin Wang Xinzhe Li Chengjie Pei Cong Wei Jie Dai Xiao Huang Hai Li Key Laboratory of Flexible Electronic(KLOFE)&Institute of Advanced Materials(IAM) Nanjing Tech UniversityNanjing 211816China

The properties of two-dimensional(2D)materials are highly dependent on their phase and thickness.Various phases exist in tin disulfide(SnS_(2)),resulting in promising electronic and optical properties.Hence,accurately identifying the phase and thickness of SnS_(2)nanosheets is prior to their optoelectronic applications.Herein,layered 2H-SnS_(2)and 4H-SnS_(2)crystals were grown by chemical vapor transportation and the crystalline phase of SnS_(2)was characterized by X-ray diffraction,ultralow frequency(ULF)Raman spectroscopy and high-resolution transmission electron microscope.As-grown crystals were mechanically exfoliated to single-and few-layer nanosheets,which were investigated by optical microscopy,atomic force microscopy and ULF Raman spectroscopy.Although the 2H-SnS_(2)and 4H-SnS_(2)nanosheets have similar optical contrast on SiO_(2)/Si substrates,their ULF Raman spectra obviously show different shear and breathing modes,which are highly dependent on their phases and thicknesses.Interestingly,the SnS_(2)nanosheets have shown phase-dependent electrical properties.The 4H-SnS_(2)nanosheet shows a current on/off ratio of 2.58×10^(5) and excellent photosensitivity,which are much higher than those of the 2H-SnS_(2)nanosheet.Our work not only offers an accurate method for identifying single-and few-layer SnS_(2)nanosheets with different phases,but also paves the way for the application of SnS_(2)nanosheets in highperformance optoelectronic devices.

关键词： Tin disulfide 2H and 4H phases Phase-dependent behavior Ultralow-frequency Raman spectroscopy photodetection

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InSe-Te van der Waals heterostructures for current rectification and photodetection

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Chinese Physics B 2023年第8期32卷 415-420页

作者：王昊冼国裕刘丽刘轩冶郭辉鲍丽宏杨海涛高鸿钧 Institute of Physics Chinese Academy of SciencesBeijing 100190China University of Chinese Academy of Sciences Chinese Academy of SciencesBeijing 100190China Songshan Lake Materials Laboratory Dongguan 523808China

As the basis of modern electronics and optoelectronics,high-performance,multi-functional p-n junctions have manifested and occupied an important position.However,the performance of the silicon-based p-n junctions declines gradually as the thickness approaches to few nanometers.The heterojunction constructed by two-dimensional(2D)materials can significantly improve the device performance compared with traditional technologies.Here,we report the In Se-Te type-II van der Waals heterostructures with rectification ratio up to 1.56×10^(7) at drain-source voltage of±2 V.The p-n junction exhibits a photovoltaic and photoelectric effect under different laser wavelengths and densities and has high photoresponsivity and detectivity under low irradiated light power.Moreover,the heterojunction has stable photo/dark current states and good photoelectric switching characteristics.Such high-performance heterostructured device based on 2D materials provides a new way for futural electronic and optoelectronic devices.

关键词： indium selenium tellurium van der Waals heterostructure transport photodetection

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New approach for deriving density operator for describing continuum photodetection process

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Chinese Physics B 2009年第3期18卷 1061-1064页

作者：范洪义胡利云 Department of Physics Shanghai Jiao Tong University Department of Material Science and Engineering University of Science and Technology of China

By introducing the two-mode entangled state representation 〈η｜ whose one mode is a fictitious one accompanying the system mode, this paper presents a new approach for deriving density operator for describing contin... 详细信息

关键词： photodetection entangled state representation density operator

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An Effort Towards Full Graphene Photodetectors

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Photonic Sensors 2022年第1期12卷 31-67页

作者： Farhad LARKI Yaser ABDI Parviz KAMELI Hadi SALAMATI Department of Physics Isfahan University of TechnologyIsfahan 84156-83111Iran Nanophysics Research Lab Department of PhysicsUniversity of TehranTehran 84156-83111Iran

Graphene as a truly 2-dimensional(2D)system is a promising candidate material for various optoelectronic applications.Implementing graphene as the main building material in ultra-broadband photodetectors has been the center of extensive research due to its unique absorption spectrum which covers most of the electro-magnetic spectra.However,one of the main challenges facing the wide application of pure graphene photodetectors has been the small optical absorption of monolayer graphene.Although novel designs were proposed to overcome this drawback,they often need complicated fabrication processes in order to integrate with the graphene photodetector.In this regard,fabrication of purely graphene photodetectors is a promising approach towards the manufacturing of simple,in expensive,and high photosensitive devices.The fabrication of full graphene photodetectors(FGPDs)is mainly based on obtaining an optimal technique for the growth of high quality graphene,modification of electronic and optical properties of the graphene,appropriate techniques for transfer of graphene from the grown substrate to the desire position,and a proper design for photodetection.Therefore,the available states of the art techniques for each step of device fabrication,along with their pros and cons,are reviewed and the possible approaches for optimization of FGPDs have been proposed.

关键词： Graphene photodetectors graphene growth photodetection

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Effect of temperature on carrier transport and photoconductivity of Mn-doped FeS2 thin films

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Progress in Natural Science:Materials International 2022年第1期32卷 135-142页

作者： Jugraj Singh Kulwinder Singh Manjot Kaur Anup Thakur Ram K.Sharma Ankush Vij Akshay Kumar Department of Nanotechnology Sri Guru Granth Sahib World University Department of Basic and Applied Sciences Punjabi University Centre for Interdisciplinary Research University of Petroleum and Energy Studies (UPES) Department of Physics University of Petroleum and Energy Studies (UPES)

Thin-film of Mn-doped iron disulfide(FeS2) has been prepared using the thermal evaporation method. This work reports the Hall measurements, temperature and light intensity-dependent photoconductivity, electrical transport mechanism, and photodetection properties of Mn-doped FeS2thin film. The transient photoconductivity measurements of p-type Mn-doped FeS2thin film show a consistent dependence upon temperature and light intensity.Charge transport mechanism was illustrated using different models. In region-Ⅰ(303–393 K) deposited film followed the thermally activated transport mechanism. Nearest neighbour hopping(NNH) transport mechanism was followed by region-Ⅱ(274–293 K), and Mott’s variable range hopping(VRH) mechanism was dominant in region Ⅲ(108–273 K). The fabricated device resulted in higher photoconductivity due to collecting charge carriers through electrodes under light illumination. The results also revealed that Mn-doped thin film possessed good photoresponsivity(～19 m A/W) as well as photo-detectivity(～3.4 × 1012Jones) due to the occupation of localized states formed by Mn-doping. Light intensity-dependent photodetection properties suggested the potential for real-time photodetection applications.

关键词： Mn-doped FeS 2 Charge transport Hopping mechanism photodetection Responsivity

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Surface plasmon enhanced infrared photodetection

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Opto-Electronic Advances 2019年第1期2卷 1-10页

作者： Jinchao Tong Fei Suo Junhuizhi Ma Landobasa Y. M Tobing Li Qian Dao Hua Zhang School of Electrical and Electronic Engineering Nanyang Technological University Nanyang Avenue 639798 Singapore

Infrared photodetectors have been used extensively in biomedicine, surveillance, communication and astronomy. However, state of the art technology based on III-V and II-VI compounds still lacks excellent performance for high-temperature operation. Surface plasmon polaritons (SPPs) have demonstrated their capability in improving the light detection from visible to infrared wave range due to their light confinement in subwavelength scale. Advanced fabrication techniques such as electron-beam lithography (EBL) and focused ion-beam (FIB), and commercially available numerical design tool like Finite-Difference Time-Domain (FDTD) have enabled rapid development of surface plasmon (SP) enhanced photodetectors. In this review article, the basic mechanisms behind the SP-enhanced photodetection, the different type of plasmonic nanostructures utilized for enhancement, and the reported SP-enhanced infrared photodetectors will be discussed.

关键词： Infrared photodetection plasmonic structures surface plasmon enhancement

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Improved Photoresponse of UV Photodetectors by the Incorporation of Plasmonic Nanoparticles on Ga N Through the Resonant Coupling of Localized Surface Plasmon Resonance

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Nano-Micro Letters 2020年第7期12卷 175-190页

作者： Sundar Kunwar Sanchaya Pandit Jae-Hun Jeong Jihoon Lee Department of Electronic Engineering College of Electronics and InformationKwangwoon University

Very small metallic nanostructures,i.e.,plasmonic nanoparticles(NPs),can demonstrate the localized surface plasmon resonance(LSPR)e ect,a characteristic of the strong light absorption,scattering and localized electromagnetic field via the collective oscillation of surface electrons upon on the excitation by the incident photons.The LSPR of plasmonic NPs can significantly improve the photoresponse of the photodetectors.In this work,significantly enhanced photoresponse of UV photodetectors is demonstrated by the incorporation of various plasmonic NPs in the detector architecture.Various size and elemental composition of monometallic Ag and Au NPs,as well as bimetallic alloy Ag Au NPs,are fabricated on Ga N(0001)by the solid-state dewetting approach.The photoresponse of various NPs are tailored based on the geometric and elemental evolution of NPs,resulting in the highly enhanced photoresponsivity of 112 A W-1,detectivity of 2.4×1012 Jones and external quantum e ciency of 3.6×104%with the high Ag percentage of Ag Au alloy NPs at a low bias of 0.1 V.The Ag Au alloy NP detector also demonstrates a fast photoresponse with the relatively short rise and fall time of less than 160 and 630 ms,respectively.The improved photoresponse with the Ag Au alloy NPs is correlated with the simultaneous e ect of strong plasmon absorption and scattering,increased injection of hot electrons into the Ga N conduction band and reduced barrier height at the alloy NPs/Ga N interface.

关键词： UV photodetection NP-based photodetectors Nanoparticles Plasmonic enhancement

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