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perpendicular magnetic anisotropy based spintronics devices in Pt/Co stacks under different hard and flexible substrates

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Science China(Information Sciences) 2023年第2期66卷 256-266页

作者： Sylvain EIMER Houyi CHENG Jinji LI Xueying ZHANG Chao ZHAO Weisheng ZHAO Hefei Innovation Research Institute Anhui High Reliability Chips Engineering LaboratoryBeihang University Fert Beijing Institute MIIT Key Laboratory of Spintronics School of Integrated Circuit Science and EngineeringBeihang University School of Physics and Quantum Information Research Center Southeast University Truth Instruments Co.Ltd. Beihang-Geortek Joint Microelectronics Institute Qingdao Research InstituteBeihang University Beijing Superstring Academy of Memory Technology

The magnetic properties in substrate/Pt/Co multilayers, such as perpendicular magnetic anisotropy(PMA), are of particular interest for spintronic devices. In particular, it is important to obtain a strong PMA on the flexible substrate in the field of wearable devices and structural health ***, the different stacks deposition and regulation conditions on the magnetic properties of the films lack systematic research. Here, we investigate the magnetic properties in Pt/Co structures with different hard and flexible substrates, layer thicknesses, and the different deposition temperatures of the buffer *** found that the coercive field and magnetodynamic behavior of the films change with these factors. Moreover, depositing the buffer layer under high temperature can effectively adjust the crystalline state of the films, thus affecting the performance of the films. After depositing the buffer layer at 800℃, our films can obtain a better crystalline state and PMA. The measurement results of the magneto-optical Kerr microscope show that the magnetic domain wall motion of the films can be controlled by different substrate and buffer layer conditions. It was expected that ultra-fast magnetic moment switching can be achieved by optimizing the conditions to reduce the power consumption of the device. The experimental results also show that the optimized film conditions can also obtain strong PMA on the flexible substrate. These findings help to understand magnetic properties in these structures and show the promising prospect for wearable devices and other spintronic devices.

关键词： Pt/Co stacks perpendicular magnetic anisotropy magnetodynamicbehavior spintronics flexible devices high temperature deposition

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perpendicular magnetic anisotropy of Pd/Co_(2)MnSi/NiFe_(2)O_(4)/Pd multilayers on F-mica substrates

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Chinese Physics B 2022年第1期31卷 568-572页

作者： Qingwang Bai Bin Guo Qin Yin Shuyun Wang School of Physics and Electronics Shandong Normal UniversityJi'nan 250358China

Pd/Co_(2)MnSi(CMS)/NiFe_(2)O_(4)(NFO)/Pd multilayers were fabricated on F-mica substrate by magnetron *** best PMA performance of the multilayer structure Pd(3 nm)/CMS(5 nm)/NFO(0.8 nm)/Pd(3 nm)was obtained by adjusting the thickness of the CMS and NFO layers.F-mica substrate has a flatter surface than glass and Si/SiO_(2) *** magnetic anisotropy energy density(K_(eff))of the sample deposited on F-mica substrates is 0.6711 Merg/cm^(3)(1 erg=10^(-7) J),which is about 30%higher than that of the multilayer films deposited on glass(0.475 Merg/cm^(3))and Si/SiO_(2)(0.511 Merg/cm^(3))substrates,and the R_(Hall) and H_(C) are also significantly *** this study,the NFO layer prepared by sputtering in the high purity Ar environment was exposed to the high purity O_(2) atmosphere for 5 min,which can effectively eliminate the oxygen loss and oxygen vacancy in NFO,ensuring enough Co-O orbital hybridization at the interface of CMS/NFO,and thus effectively improve the sample PMA.

关键词： perpendicular magnetic anisotropy Co_(2)MnSi ferrimagnetics NiFe_(2)O_(4)

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perpendicular magnetic anisotropy of Co_(85)Cr_(50)/Pt multilayers

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Journal of University of Science and Technology Beijing 2004年第4期11卷 319-323页

作者： PolHwang BaoheLi TaoYang ZhonghaiZhatt FengwuZhut DepartmentofPhysics KimI1SungUniversityPyongyangDPRK MaterialsScienceandEngineeringSchool UniversityofScienceandTechnologyBeijingBeijing100083China DepartmentofPhysicsandMathematics BeijingTechnologyandBusinessUniversityBeijing100037China

The CoCr/Pt bilayers and (CoCr/Pt)_(20) multilayers with Pt underlayer wereprepared by DC magnetron sputtering. The effects of prepared condition on perpendicular magneticanisotropy were investigated. The results show that the thickness of Pt under-layer has a greateffect on the microstructure and perpendicular magnetic anisotropy of CoCr/Pt bilayers and(CoCr/Pt)_(20) multilayers. When the thickness of Pt underlayer increases, Pt(lll) and CoCr(002)peaks of both CoCr/Pt bilayers and (CoCr/Pt)_(20) multilayers increase and the bilayer periodicityof the multilayers is improved. The effective magnetic anisotropy of (CoCr/Pt)_(20) multilayers withPt underlayer was much larger than that of CoCr/Pt bilayers. The (CoCr/Pt)_(20) multilayers has astronger perpendicular magnetic anisotropy than that of CoCr/Pt bilayers. This is ascribed to theinterface magnetic anisotropy of the multilayers.

关键词： multilayers perpendicular magnetic anisotropy effective magnetic anisotropyconstant interface magnetic anisotropy

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The 50 nm-thick yttrium iron garnet films with perpendicular magnetic anisotropy

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Chinese Physics B 2022年第4期31卷 67-72页

作者： Shuyao Chen Yunfei Xie Yucong Yang Dong Gao Donghua Liu Lin Qin Wei Yan Bi Tan Qiuli Chen Tao Gong En Li Lei Bi Tao Liu Longjiang Deng National Engineering Research Center of Electromagnetic Radiation Control Materials University of Electronic Science and Technology of ChinaChengdu 610054China School of Materials and Energy University of Electronic Science and Technology of ChinaChengdu 610054China School of Electronic Science and Engineering University of Electronic Science and Technology of ChinaChengdu 611731China

Yttrium iron garnet(YIG) films possessing both perpendicular magnetic anisotropy(PMA) and low damping would serve as ideal candidates for high-speed energy-efficient spintronic and magnonic ***,it is still challenging to achieve PMA in YIG films thicker than 20 nm,which is a major bottleneck for their *** this work,we demonstrate that this problem can be solved by using substrates with moderate lattice mismatch with YIG so as to suppress the excessive strain-induced stress release as increasing the YIG *** carefully optimizing the growth and annealing conditions,we have achieved out-of-plane spontaneous magnetization in YIG films grown on sGGG substrates,even when they are as thick as 50 ***,ferromagnetic resonance and spin pumping induced inverse spin Hall effect measurements further verify the good spin transparency at the surface of our YIG films.

关键词： spintronics perpendicular magnetic anisotropy magnetic thin film deposition by sputtering

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Thickness-dependent magnetic properties in Pt/[Co/Ni]_(n) multilayers with perpendicular magnetic anisotropy

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Chinese Physics B 2023年第1期32卷 503-508页

作者：晏春杰陈丽娜周恺元杨留鹏付清为王文强岳文诚梁力克陶醉杜军王永磊刘荣华 National Laboratory of Solid State Microstructures School of Physics and Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210093China School of Science Nanjing University of Posts and TelecommunicationsNanjing 210023China School of Electronics Science and Engineering Nanjing UniversityNanjing 210093China

We systematically investigated the Ni and Co thickness-dependent perpendicular magnetic anisotropy(PMA)coefficient,magnetic domain structures,and magnetization dynamics of Pt(5 nm)/[Co(t_(Co))/Ni(t_(Ni))]_(5)/Pt(1 nm)multilayers by combining the four standard magnetic characterization *** magnetic-related hysteresis loops obtained from the field-dependent magnetization M and anomalous Hall resistivity(AHR)ρxy showed that the two serial multilayers with t_(Co)=0.2 nm and 0.3 nm have the optimum PMA coefficient K_(U) as well as the highest coercivity H_(C) at the Ni thickness t_(Ni)=0.6 ***,the magnetic domain structures obtained by magneto-optic Kerr effect(MOKE)microscopy also significantly depend on the thickness and K_(U) of the ***,the thickness-dependent linewidth of ferromagnetic resonance is inversely proportional to K_(U) and H_(C),indicating that inhomogeneous magnetic properties dominate the ***,the intrinsic Gilbert damping constant determined by a linear fitting of the frequency-dependent linewidth does not depend on the Ni thickness and K_(U).Our results could help promote the PMA[Co/Ni]multilayer applications in various spintronic and spin-orbitronic devices.

关键词： perpendicular magnetic anisotropy magnetic domain damping multiayers

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RF magnetron sputtering induced the perpendicular magnetic anisotropy modification in Pt/Co based multilayers

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Chinese Physics B 2021年第2期30卷 584-588页

作者： Runze Li Yucai Li Yu Sheng Kaiyou Wang State Key Laboratory for Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Beijing Academy of Quantum Information Sciences Beijing 100193China Center for Excellence in Topological Quantum Computation University of Chinese Academy of SciencesBeijing 100049China

We demonstrate that radio frequency(RF)magnetron sputtering technique can modify the perpendicular magnetic anisotropy(PMA)of Pt/Co/normal metal(NM)thin *** of ion irradiation during RF magnetron sputtering should not be neglected and it can weaken PMA of the deposited magnetic *** magnitude of this influence can be controlled by tuning RF magnetron sputtering deposition conditions and the upper NM layer *** to the stopping and range of ions in matter(SRIM)simulation results,defects such as displacement atoms and vacancies in the deposited film will increase after the RF magnetron sputtering,which can account for the weakness of *** amplitude changes of the Hall resistance and the threshold current intensity of spin orbit torque(SOT)induced magnetization switching also can be *** study could be useful for controlling magnetic properties of PMA films and designing new type of SOT-based spintronic devices.

关键词： perpendicular magnetic anisotropy RF magnetron sputtering ion irradiation spin orbit torque

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Co/Pt multilayer-based pseudo spin valves with perpendicular magnetic anisotropy

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Rare Metals 2014年第6期33卷 646-651页

作者： Shuai Liu Guang-Hua Yu Mei-Yin Yang Hai-Lang Ju Bao-He Li Xiao-Bai Chen School of Materials Science and Engineering University of Science and Technology Beijing State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences School of Science Beijing Technology and Business University

Pseudo spin valves（SVs） exhibiting perpendicular magnetic anisotropy were prepared by magnetron sputtering. Magnetization measurements of the Co/Pt multilayers were performed to select the reference and free layers. The selection criteria are square magnetic hysteresis loops, weaker current shunting effect, and proper coercivity. The optimal reference layer and free layer are Pt（5.0 nm）/[Co（0.4 nm）/Pt（0.6 nm）]3/Co（0.4 nm）/Cu（3.0 nm）and Cu（3.0 nm）/[Co（0.4 nm）/Pt（1.5 nm）]4, *** resulting pseudo SV exhibits two well-separated hysteresis loops when the field is applied perpendicular to the film plane. The minor hysteresis loop corresponding to the free layer shifts toward negative direction of the magnetic field axis, indicating ferromagnetic interlayer exchange coupling between the two magnetic layers. The coupling also enhances the coercivity（HC） of both layers. The perpendicular giant magnetoresistance（GMR） of 2.7 % is achieved with current in plane measurement. The GMR first increases when Pt seed layer is thickened, reaches a maximum of 3.0 % at 4 nm and then decreases with the further increase of thickness. But thicker Cu spacer layer always lowers the GMR of the SV.

关键词： perpendicular magnetic anisotropy Spin valve Giant magnetoresistance Ferromagnetic coupling Co/Pt multilayers

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Optimized growth of compensated ferrimagnetic insulator Gd_(3)Fe_(5)O_(12)with a perpendicular magnetic anisotropy

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Chinese Physics B 2021年第9期30卷 62-71页

作者： Heng-An Zhou Li Cai Teng Xu Yonggang Zhao Wanjun Jiang State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics Tsinghua UniversityBeijing 100084China Frontier Science Center for Quantum Information Tsinghua UniversityBeijing 100084China

Compensated ferrimagnetic insulators are particularly interesting for enabling functional spintronic,optical,and microwave *** many different garnets,Gd_(3)Fe_(5)O_(12)(GdIG)is a representative compensated ferrimagnetic *** this paper,we will study the evolution of the surface morphology,the magnetic properties,and the magnetization compensation through changing the following parameters:the annealing temperature,the growth temperature,the annealing duration,and the choice of different single crystalline garnet *** objective is to find the optimized growth condition of the GdIG films,for the purpose of achieving a strong perpendicular magnetic anisotropy(PMA)and a flat surface,together with a small effective damping *** our experiments,we have found that the surface roughness approaching 0.15 nm can be obtained by choosing the growth temperature around 700℃,together with an enhanced *** have also found the modulation of magnetic anisotropy by choosing different single crystalline garnet substrates which change the tensile strain to the compressive strain.A measure of the effective magnetic damping parameter(α_(eff)=0.04±0.01)through a spin pumping experiment in a GdIG/Pt bilayer is also *** optimizing the growth dynamics of GdIG films,our results could be useful for synthesizing garnet films with a PMA,which could be beneficial for the future development of ferrimagnetic spintronics.

关键词： ferrimagnet perpendicular magnetic anisotropy ferrite and garnet devices crystal growth

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Enhancement of post-annealing stability in Co/Ni multilayers with perpendicular magnetic anisotropy by Au insertion layers

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Rare Metals 2016年第10期35卷 779-783页

作者： Yi Cao Ming-Hua Li Kang Yang Xi Chen Guang Yang Qian-Qian Liu Guang-Hua Yu School of Materials Science and Engineering University of Science and Technology Beijing

Enhancement of post-annealing stability in Co/ Ni multilayers with perpendicular magnetic anisotropy （PMA） was obtained by inserting Au layers into Ni/Co interfaces. After annealing at 350 ℃, the effective mag- netic anisotropy density （Kef0 for Ta（3）/Pt（2）/[Co（0.3）/ Ni（0.6）/Au（0.3）]× 3/Co（0.3）/Pt（1）/Ta（3）（in nm） keeps at 0.48 × 105 J·m^-3. Scanning transmission electron micro- scopy-high-angle annular dark field （STEM-HAADF） analysis shows that the diffusion between Ni and Co layers is obstructed by the Au insertion layers among them, which is responsible for the post-annealing stability enhancement of the multilayers. Multilayers with Pt insertion layers were also investigated as reference samples in this work. Com- pared with Pt-layer-inserted Co/Ni multilayers, the Au insertion layers are found to bring seldom interfacial PMA to the multilayers, making it competitive in being employed to enhance the post-annealing stability of PMA Co/Ni multilayers which are used for magnetic random access memory devices （MRAM）.

关键词： Co/Ni multilayers perpendicular magnetic anisotropy Post-annealing stability Au insertion layers

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Electric-field control of perpendicular magnetic anisotropy by resistive switching via electrochemical metallization

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Chinese Physics B 2023年第6期32卷 595-601页

作者：袁源魏陆军卢羽刘若柏刘天宇陈家瑞游彪张维吴镝杜军 National Laboratory of Solid State Microstructures and Department of Physics Nanjing UniversityNanjing 210093China New Energy Technology Engineering Laboratory of Jiangsu Provence&School of Science Nanjing University of Posts and Telecommunications(NUPT)Nanjing 210046China

Electric-field control of perpendicular magnetic anisotropy(PMA) is a feasible way to manipulate perpendicular magnetization,which is of great importance for realizing energy-efficient ***,we propose a novel approach to accomplish this task at room temperature by resistive switching(RS) via electrochemical metallization(ECM) in a device with the stack of Si/SiO_(2)/Ta/Pt/Ag/Mn-doped ZnO(MZO)/Pt/Co/Pt/*** applying certain voltages,the device could be set at high-resistance-state(HRS) and low-resistance-state(LRS),accompanied with a larger and a smaller coercivity(H_(C)),respectively,which demonstrates a nonvolatile E-field control of *** on our previous studies and the present control experiments,the electric modulation of PMA can be briefly explained as *** LRS,the Ag conductive filaments form and pass through the entire MZO layer and finally reach the Pt/Co/Pt sandwich,leading to weakening of PMA and reduction of H_(C).In contrast,at HRS,most of the Ag filaments dissolve and leave away from the Pt/Co/Pt sandwich,causing partial recovery of PMA and an increase of H_(C).This work provides a new clue to designing low-power spintronic devices based on PMA films.

关键词： electric-field control resistive switching perpendicular magnetic anisotropy electrochemical metallization magnetoelectric random access memory

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