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CsPbBr_(x)I_(3-x)thin films with multiple ammonium ligands for low turn-on pure-red perovskite light-emitting diodes

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Nano Research 2021年第1期14卷 191-197页

作者： Maowei Jiang Zhanhao Hu Luis K.Ono Yabing Qi Energy Materials and Surface Sciences Unit(EMSSU) Okinawa Institute of Science and Technology Graduate University(OIST)1919-1 TanchaOnna-sonOkinawa 904-0495Japan

All-inorganic α-CsPbBr_(x)I_(3-x)perovskites featuring nano-sized crystallites show great potential for pure-red light-emitting diode(LED)***,the CsPbBr_(x)I_(3-x)LEDs based on nano-sized α-CsPbBr_(x)I_(3-x)crystallites have been fabricated mainly via the classical colloidal route including a tedious procedure of nanocrystal synthesis,purification,ligand or anion exchange,film casting,*** the usually adopted conventional LED device structure,only high turn-on voltages(>2.7)have been achieved for CsPbBrxl3-x ***,this mix-halide system may suffer from severe spectra-shift under *** this report,CsPbBr_(x)I_(3-x)thin films featuring nano-sized crystallites are prepared by incorporating multiple ammonium ligands in a one-step spin-coating *** multiple ammonium ligands constrain the growth of CsPbBr_(x)I_(3-x)*** CsPbBr_(x)I_(3-x)thin films benefit from quantum *** corresponding CsPbBr_(x)I_(3-x)LEDs,adopting a conventional LED structure of indium-doped tin oxide(ITO)/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)(PEDOT:PSS)/CsPbBr_(x)I_(3-x)/[6,6]-phenyl C61 butyric acid methyl ester(PCBM)/bathocuproine(BCP)/AI,emit pure-red color at Commission Internationale de I'eclairage(CIE)coordinates of(0.709,0.290),(0.711,0.289),etc.,which represent the highest color-purity for reported pure-red perovskite LEDs and meet the Rec.2020 requirement at CIE(0.708,0.292)very *** CsPbBr_(x)I_(3-x)LED shows a low turn-on voltage of 1.6 V,maximum external quantum efficiency of 8.94%,high luminance of 2,859 cd·m^(-2),and good color stability under bias.

关键词： CsPbBr_(x)I_(3-x)thin film nano-sized crystallites surface termination pure-red color perovskite light-emitting diode low turn-on voltage

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In-situ solid-phase anion-exchange full-color perovskite light-emitting devices

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Science China Chemistry 2023年第6期66卷 1707-1713页

作者： Danyang Li Junjie Wang Jian Wang Junbiao Peng Institute of Polymer Optoelectronic Materials and Devices State Key Laboratory of Luminescent Materials and DevicesSouth China University of TechnologyGuangzhou 510640China

perovskite materials can realize the transition from green light to full-visible light spectrum by halogen anion ***,we designed an in-situ solid-phase anion-exchange method combined with inkjet printing to achieve full-color perovskite quantum dot light-emitting diodes(PeQD-LEDs).It was revealed that,in addition to the concentration,the anion-exchange rate was affected by the dielectric constant of the anion-exchange medium *** destroying the PeQD film,the higher the dielectric constant of the solvent,the faster the reaction *** at the same time,the solvent with higher dielectric constant will cause more defects,so the morphology,structure and properties of the perovskite films varied with *** chain length of amine salts in anion-exchange medium solute also played a key role in the stability of electroluminescence *** obtained blue-light devices had a maximum EQE of 4.6%at 481 nm and 6.6%at 493 nm prepared by *** inkjet printing,instead of printing red-,green-and blue-luminescent materials,we printed halogen-containing materials to achieve the in-situ solid-phase anion-exchange with underlying Pe QDs,and the inkjet-printed full-color device showed the current efficiency of 0.78 cd A^(-1).The method to achieve full-color devices by inkjet-printing halogen-containing materials can not only simplify the process,but also broaden the range of material selection,making the ink preparation more selective.

关键词： perovskite light-emitting diode inkjet print anion exchange full color

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Enabling monodisperse perovskite phase with buried interface modification toward efficient light-emitting diodes

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Nano Research Energy 2023年第3期2卷 38-47页

作者： Maowei Jiang Xiaomeng Zhang Feijiu Wang Key Laboratory for Special Functional Materials(Ministry of Education of China) National&Local Joint Engineering Research Centre for High-efficiency Display and Lighting TechnologySchool of Materials ScienceHenan UniversityKaifeng 475004China Henan Key Laboratory of Photovoltaic Materials Henan UniversityKaifeng 475004China

The performance of perovskite light-emitting diodes(PeLEDs)has been drastically improved ***,the coexistence of polydisperse perovskite domains has been one worthy subject of *** crystallization of perovskite is affected by the buried interface character with the bottom contact layer;and the trap states also inherently exist at the buried interface of the perovskite film,which induce the nonradiative recombination and impede the PeLED *** this work,we focus on the crystallization modulation of monodisperse perovskite nanodomains toward high-performance *** show that a LiBr pre-modification layer on the bottom substrate induces the formation of monodisperse perovskite *** this system,the carrier transferring process deriving from the polydisperse phases is *** addition,the LiBr pre-modification layer at the buried interface minimizes the trap states and enhances the radiative recombination of ***,our PeLEDs show a champion external quantum efficiency(EQE)of 25.5%for 4 mm2 device,and 22.9%for 100 mm^(2)device.

关键词： perovskite light-emitting diode monodisperse phase defect passivation buried interface large area device

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