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Structural and physical properties of permalloy thin films prepared by DC magnetron sputtering at different substrate temperature

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Journal of University of Science and Technology Beijing 2004年第1期11卷 30-34页

作者： FengpingWang PingWu HongQiu LiqingPan HuanpingLiu YueTian ShengLuo DepartmentofPhysics UniversityofScienceandTechnologyBeijingBeijing100083China BeijingKeda-TianyuMicroelectronicMaterialsTechnologyDevelopmentCo.Ltd. Beijing100083China

permalloy Ni_(80)Fe_(20) films have been grown on thermal oxidized Si (111)wafers by magnetron sputtering at well-controlled substrate temperatures of 300, 500, 640 and 780 Kin 0.65 Pa argon pressure. The base pressure was about 1x10^(-4) Pa. The deposition rate was about 5nm/min for all the films. The structure of the films was studied using X-ray diffraction, scanningelectron microscopy and atomic force microscopy. The composition of the films was analyzed usingscanning Auger microprobe. The resistance and magnetoresistance of the films were measured usingfour-point probe technique. The results show that the content of oxygen in the films decreasesgradually with raising substrate temperature. In addition, the surface morphology of the filmspresents notable change with the increasing of the substrate temperature; the residual gases anddefects decrease and the grains have coalesced evidently, and then the grains have grown upobviously and the texture of (111) orientation develops gradually in the growing film. As a result,the resistivity reduces apparently and magnetoresistance ratio increases markedly with raisingsubstrate temperature.

关键词： permalloy film substrate temperature residual gases resistance andmagnetoresistance

Observation of Magnetic Domain Structures of Magnetic Thin films by the Lorentz Electron Microscopy

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International Journal of Minerals,Metallurgy and Materials 1999年第2期13卷 119-124页

作者： A. Okada M Chimura K Hamada M Arita I. Ishida(Advanced Materials Science Laboratory, Division of Electronics and information Engineering, Graduate School of Engineering, Hokkaido University,Sapporo 060-8628, Japan) Division of Electronics and Information Engineering Graduate School of Engineering Hokkaido University Sapporo 060-8628 Japan

The microstructure change in thin NiFe/Cu/NiFe films during the magnetization process was observed by the Lorentz electronmicroscopy. TWo types of films were prepared: (1) one NiFe layer with anisotropy and the other layer without, and (2) both NiFe layershave anisotropy normal each other. The domain wall migration and magnetization rotation processes in each of NiFe layers could be observed separately. The presence of magnetic anisotropy in the magnetic layer effectively controls the behavior of magnetic domains. Theinteraction between the two NiFe layers of the film could be observed not so strong in the present experiment.

关键词： magnetic domain domain wall Lorentz microscopy multi-layers thin films hysteresis loop permalloy film

Ferromagnetic Resonance Study on the permalloy Submicron Rectangular Arrays Prepared by Electron Beam Lithography

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Journal of Southeast University(English Edition) 2002年第2期18卷 197-200页

作者：张雪云石林翟亚施靖东南大学物理系南京210096 犹他大学物理系

In this paper, we report a ferromagnetic resonance study on the permalloy film of submicron sized rectangular arrays prepared by electron beam lithography and the theoretical simulation to the non uniform demagnetizing effect and ferromagnetic resonance data. By theoretical simulation, the magnetization, gyromagnetic ratio and g value of the sample are determined. The theoretical curves of the dependence of the resonance field on the field orientation φ H fit well with the experimental data. When the steady magnetic field is applied near the film normal, a series of additional regular peaks (up to eight ) appeared in the FMR spectrum on the low field side of the main FMR peak. The resonance field of these side peaks decreases linearly with the peak number. The possible physical mechanism of these multiple peaks was discussed.

关键词： ferromagnetic resonance permalloy film submicron arrays

Structural and physical properties of permalloy thin films prepared by DC magnetron sputtering at different substrate temperature

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Rare Metals 2004年第1期23卷 52-52页

作者： WANG Fengping, WU Ping, QIU Hong, PAN Liqing, LIU Huanping, TIAN Yue, and LUO Sheng

permalloy Ni80Fe20 films have been grown on thermal oxidized Si (111) wafers by magnetron sputtering at well-controlled substrate temperatures of 300, 500, 640 and 780 K in 0.65 Pa argon pressure. The base pressure was about 1×10-4 Pa. The deposition rate was about 5 nm/min for all the films. The structure of the films was studied using X-ray diffraction, scanning electron microscopy and atomic force microscopy. The composition of the films was analyzed using scanning Auger microprobe. The resistance and magnetoresistance of the films were measured using four-point probe technique. The results show that the content of oxygen in the films decreases gradually with raising substrate temperature. In addition, the surface morphology of the films presents notable change with the increasing of the substrate temperature; the residual gases and defects decrease and the grains have coalesced evidently, and then the grains have grown up obviously and the texture of (111) orientation develops gradually in the growing film. As a result, the resistivity reduces apparently and magnetoresistance ratio increases markedly with raising substrate temperature.

关键词： permalloy film substrate temperature residual gases resistance and magnetoresistance