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EMC Improvement for High Voltage Pulse Transformers by Pareto-optimal Design of a Geometry Structure Based on Parasitic Analysis and EMI Propagation

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CSEE Journal of Power and Energy Systems 2021年第5期7卷 1051-1063页

作者： Mohamad Saleh Sanjari Nia Pourya Shamsi Mehdi Ferdowsi Missouri University of Science and Technology USA.

High voltage pulse transformers have an essential role in pulsed power systems and power conversion *** the electromagnetic behavior of such devices leads to better efficiency and low-level electromagnetic interference(EMI)noise propagation in *** this paper,a high voltage pulsed power system is considered and analyzed to improve their electromagnetic compatibility(EMC).The new generation of pulsed power systems that use SiC and GaN fast switches in capacitor charger power electronic circuits,face far more EMI ***,in this paper,the EMI propagation paths in the pulsed power system are realized and *** EMI noise level of the system is obtained and compared to the IEC61800-3 *** improve the EMC,the parasitic parameters of the transformer,as the main path of EMI circulation,are optimized to block the EMI propagation in the pulsed power *** achieve this result,the parasitics are modeled and calculated with a novel and accurate energy distribution ***,by defining a cost function,the geometry structure of the transformer is optimized to lower the parasitics in the *** pareto-optimal techniques are investigated for the cost function *** models and results are verified by the 3D-finite element method(FEM)and experimental results for several given *** and experimental verifications of this model,make the model suitable for any desirable design in any pulsed power ***,the EMI noise level of the system after optimization is shown and compared to the IEC61800-3 standard.

关键词： EMC/EMI geometry structure pareto-optimal techniques parasitics pulsed power system transformer

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A 2.4GHz power amplifier in 0.35μm SiGe BiCMOS

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Journal of Semiconductors 2010年第1期31卷 65-68页

作者：郝明丽石寅 Institute of Microelectronics Chinese Academy of Sciences Institute of Semiconductors Chinese Academy of Sciences

This paper presents a 2.4 GHz power amplifier （PA） designed and implemented in 0.35μm SiGe BiCMOS technology. Instead of chip grounding through PCB vias, a metal plate with a mesa connecting ground is designed to decrease the parasitics in the PCB, improving the stability and the gain of the circuit. In addition, a low-pass network for output matching is designed to improve the linearity and power capability. At 2.4 GHz, a P1dB of 15.7 dBm has been measured, and the small signal gain is 27.6 dB with S11 〈 -7 dB and S22 〈 -15 dB.

关键词： 2.4 GHz PA SiGe BiCMOS parasitics

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