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p-type semiconductor Doping Affords Hole-Transporting-Layer-Free Thin-film perovskite Solar Cells with High Stability

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p-Type Semiconductor Doping Affords Hole-Transporting-Layer-...

p-type CaFe_2O_4 semiconductor nanorods controllably synthesized by molten salt method

第六届新型太阳能电池材料科学与技术学术研讨会

作者： Zhongmin Zhou College of Chemistry and Molecular Engineering Qingdao University of Science and Technology

poor performance of thin perovskite films arises partly from small crystal grains that tend to suffer from defects at the grain boundaries of small crystals, leading to an inadequate pCE and a short lifetime. Consequently, there is a need for studies on crystal growth and grain size control. perovskite crystal grains that are tens of nanometers in size are morphologically less stable than large ones. We have now found that doping with a very small amount of an organic/inorganic hybrid p-type organic semiconductor, a bissodium salt of fluorinated tetraarylbenzo[1,2-b:4,5-b￠] dipyrrol-1,5-yl alkanediylbissulfonate(BDpSO), enhances both the efficiency and stability of devices. We report herein that an inverted structure device on an indium tin oxide(ITO)/glass, using a thin MApbI film doped with 0.03 wt % of BDpSO, does not require a precast hole transporting layer(HTL). It exhibits improved pCE and high device stability. For example, the device on ITO/glass, onto which we directly coated a 280-nm-thick pV film doped with 0.03 wt % of BDpSO showed 30% improvement in pCE(16.9%) over an undoped reference device without a HTL, and it retained 93% of its initial pCE after 1000 h continuous light soaking at the maximum power point(Mpp).

关键词： p-type semiconductor doping Hole-Transporting-Layer-Free perovskite Solar Cells stability

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Journal of Energy Chemistry 2016年第3期25卷 381-386页

作者： Xin Liu Junzhe Jiang Yushuai Jia Ailing Jin Xiangshu Chen Fei Zhang Hongxian Han Jiangxi Inorganic Membrane Materials Engineering Research Centre College of Chemistry and Chemical Engineering Jiangxi Normal University State Key Laboratory of Catalysis Dalian Institute of Chemical Physics Chinese Academy of Sciences Dalian National Laboratory for Clean Energy

pure phase, regular shape and well crystallized nanorods of p-type semiconductor CaFeOhave been fabricated for the first time by a facile molten salt assisted method, as confirmed by XRD, TEM, SEM and HRTEM. UV-vis diffuse reflectance spectra and Mott–Schottky plots show that the band structure of the CaFeOnanorods is narrower than that of the CaFeOnanoparticles synthesized by conventional method. The enhancement of the visible-light absorption is due to narrowness of the band gap in CaFeOnanorods. The appropriate ratio between the molten salt and the CaFeOprecursors plays an important role in inhibiting the growth of the crystals along the(201) plane to give the desired nanorod morphology. This work not only demonstrates that highly pure p-type CaFeOsemiconductor with tunable band structure and morphology could be obtained using the molten salt strategy, but also affirms that the bandgap of a semiconductor may be tunable by monitoring the growth of a particular crystal ***, the facile eutectic molten salt method developed in this work may be further extended to fabricate some other semiconductor nanomaterials with a diversity of morphologies.

关键词： p-type semiconductor CaFe_2O_4 nanorods Molten salt Crystal plane Visible-light absorption

photoelectrochemical effect of Cu_(2)O on the corrosion behavior of Cu in sodium sulfate solution

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Journal of Materials Science & Technology 2023年第29期160卷 46-54页

作者： Jiarun Li Feng Qian Chongqing Guo Ning Wang Zhuoyuan Chen Lei Wang School of Environment and Safety Engineering Qingdao University of Science and TechnologyQingdao 266042China Key Laboratory of Marine Environmental Corrosion and Bio-fouling Institute of OceanologyChinese Academy of SciencesQingdao 266071China School of Materials Science and Hydrogen Energy Foshan UniversityFoshan 528000China

The electrochemical associated with photoelectrochemical behaviors of Cu electrodeposited with Cu_(2)O layer were investigated in this *** corrosion of Cu was promoted due to the enhanced anodic and cathodic processes under AM 1.5illumination compared with that in the darkness,especially for the anodic *** photoinduced corrosion of Cu by Cu_(2)O was detected by Scanning Vibrating Electro Technique(SVET).The effect of Cu_(2)O on the promotion of Cu corrosion under illumination can be as-cribed to the narrowed depletion layer in Cu_(2)O under illumination,which facilitates the separation of hole-electron *** resultant holes give rise to the oxidation of the Cu matrix and lead to a pro-moted corrosion ***,a method for in-situ determining the photoinduced current of a semiconductor material is proposed.

关键词： photoinduced corrosion Cu_(2)O Copper SVET p-type semiconductor

p‑type Two‑Dimensional semiconductors:From Materials preparation to Electronic Applications

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纳微快报:英文版 2023年第12期15卷 242-270页

作者： Lei Tang Jingyun Zou Songshan Lake Materials Laboratory Dongguan 523808GuangdongPeople’s Republic of China Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application School of Physical Science and TechnologySuzhou University of Science and TechnologySuzhou 215009JiangsuPeople’s Republic of China

Two-dimensional(2D)materials are regarded as promising candidates in many applications,including electronics and optoelectronics,because of their superior properties,including atomic-level thickness,tunable bandgaps,large specific surface area,and high carrier *** order to bring 2D materials from the laboratory to industrialized applications,materials preparation is the first *** to the n-type analogs,the family of p-type 2D semiconductors is relatively small,which limits the broad integration of 2D semiconductors in practical applications such as complementary logic *** far,many efforts have been made in the preparation of p-type 2D *** this review,we overview recent progresses achieved in the preparation of p-type 2D semiconductors and highlight some promising methods to realize their controllable preparation by following both the top-down and bottom-up ***,we summarize some significant application of p-type 2D semiconductors in electronic and optoelectronic devices and their *** end,we conclude the challenges existed in this field and propose the potential opportunities in aspects from the discovery of novel p-type 2D semiconductors,their controlled mass preparation,compatible engineering with silicon production line,high-κdielectric materials,to integration and applications of p-type 2D semiconductors and their heterostructures in electronic and optoelectronic ***,we believe that this review will guide the design of preparation systems to fulfill the controllable growth of p-type 2D semiconductors with high quality and thus lay the foundations for their potential application in electronics and optoelectronics.

关键词： Two-dimensional materials p-type semiconductor Top-down Bottom-up Electronics Optoelectronics

Design principle of S-scheme heterojunction photocatalyst

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Journal of Materials Science & Technology 2022年第29期124卷 171-173页

作者： Quanlong Xu S.Wageh Ahmed A.Al-Ghamdi Xin Li Key laboratory of Carbon Materials of Zhejiang province College of Chemistry and Materials EngineeringWenzhou UniversityWenzhou325027China Department of physics Faculty of ScienceKing Abdulaziz UniversityJeddah21589Saudi Arabia Institute of Biomass Engineering Key Laboratory of Energy Plants Resource and UtilizationMinistry of Agriculture and Rural AffairsSouth China Agricultural UniversityGuangzhou510642China

Recently,a new opinion was put forward on general design standards for S-scheme heterojunction *** types of S-scheme heterojunctions were ***,the critical understanding on the curved Fermi level at the interface of S-... 详细信息

关键词： S-scheme heterojunction p-type semiconductor n-type semiconductor Curved Fermi level

Growth of Fe-Doped and V-Doped MoS2 and Their Magnetic-Electrical Effects

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Journal of Electronic Science and Technology 2022年第3期20卷 225-236页

作者： Rui Tao Zhi-Hao Yang Chao Tan Xin Hao Zun-Gui Ke Lei Yang Li-ping Dai Xin-Wu Deng ping-Jian Li Ze-Gao Wang the College of Materials Science and Engineering Sichuan UniversityChengdu610065China Southwest Institute of Technical physics Chengdu610046China the State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu610054China

Magnetism in two-dimensional(2D)materials has attracted much attention ***,intrinsic magnetic 2D materials are rare and mostly unstable in *** heteroatom doping can introduce magnetism,the basic property especially the electrical-magnetic coupling property has been rarely ***,both iron(Fe)-doped and vanadium(V)-doped MoSfilms were grown by chemical vapor *** studying the structure and electrical property of Fe-doped and V-doped MoS,it was found that both Fe and V doping would decrease the electron concentration,exhibiting a p-type doping ***,V-doped MoSdisplays a p-type conduction *** the carrier mobility decreases after heteroatom doping,both Fe and V doping could endow MoSwith magnetism,in which the transfer curves of both MoStransistors exhibit a strong magneticdependent *** is found that the magnetic response of Fe-doped MoScan be tuned from~0.2 nA/T to~1.3 nA/T,with the tunability much larger than that of V-doped *** last,the magnetic mechanism is discussed with the local magnetic property performed by magnetic force *** typical morphology-independent magnetic signal demonstrates the formed magnetic domain structure in Fe-doped *** study opens new potential to design novel magnetic-electrical devices.

关键词： Magnetic domain magnetic doping MoS2 p-type semiconductor

SrTiO_(3)-CaCr_(0.5)Nb_(0.5)O_(3) solid solutions as p-type photocatalysts for Z-scheme water splitting under visible light illumination

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Journal of Materials Science & Technology 2021年第28期87卷 46-53页

作者： Zeming Gu Qi Wang Xiaoqin Sun Lingwei Lu Yuwei Zhang Ran Wang Shu Jin Yinlin Shao Jun Qian Xiaoxiang Xu Clinical and Central Lab Putuo People’s HospitalDepartment of NeurosurgeryTongji HospitalTongji University School of MedicineShanghai Key Lab of Chemical Assessment and SustainabilitySchool of Chemical Science and EngineeringTongji UniversityShanghaiChina State Key Laboratory of Fluid power and Mechatronic Systems School of Mechanical EngineeringZhejiang UniversityHangzhou310027China

p-type semiconductivity has been observed in solid solution series(SrTiO_(3))_(1-x)(CaCr_(0.5)Nb_(0.5)O_(3))x(0.0≤x≤0.15),which all adopt cubic symmetry and own intense absorption in the visible light *** solid solutions are superior H2 evolution photocatalysts under visible light illumination(λ≥400 nm).An AQE as high as 1.02%at 420±20 nm has been achieved at optimal composition(SrTiO_(3))_(0.85)(CaCr_(0.5)Nb_(0.5)O_(3))0.15 which significantly surpasses the parent *** H_(2)/O_(2) production under visible light illumination has been successfully realized using Z-scheme system containing(SrTiO_(3))_(0.85)(CaCr_(0.5) Nb_(0.5) O_(3))_(0.15),WO_(3) and I^(-)/IO_(3)^(-)redox couple.

关键词： p-type semiconductor photocatalyst Z-scheme Water splitting Solid solution

Electronic structures and optical properties of Zn-dopedβ-Ga_2O_3 with different doping sites

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Chinese physics B 2012年第12期21卷 430-435页

作者：李超闫金良张丽英赵刚 School of physics and Optoelectronic Engineering Ludong University

The electronic structures and optical properties of intrinsic β-Ga2O3 and Zn-dopedβ-Ga2O3 are investigated by first-principles calculations. The analysis about the thermal stability shows that Zn-doped β-Ga2O3 remains stable. The Zn doping does not change the basic electronic structure of β-Ga2O3, but only generates an empty energy level above the maximum of the valence band, which is shallow enough to make the Zn-doped β-Ga2O3 a typical p-type semiconductor. Because of Zn doping, absorption and reflectivity are enhanced in the near infrared region. The higher absorption and reflectivity of ZnGa（2） than those of ZnGa（1） are due to more empty energy states of ZnGa（2） than those of ZnGa（1） near Ef in the near infrared region.

关键词： first-principles Zn-doped β-Ga2O3 p-type semiconductor optical properties

Ba substitution for enhancement of the thermoelectric properties of LaCoO_(3) ceramics(0≤x≤0.75)

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Journal of Advanced Ceramics 2019年第4期8卷 519-526页

作者： Mohamed Ali BOUSNINA Fabien GIOVANNELLI Loic pERRIERE Guillaume GUEGAN Fabian DELORME Université Francois Rabelais de Tours CNRSINSA CVLGREMAN UMR7347IUT de Blois15 rue de la chocolaterieCS2903F-41029 Blois CedexFrance Universitéparis 13 Sorbonne Paris CiteLaboratoire des Sciences des Procédés et des MatériauxCNRSUPR 340799 avenue J.B.ClémentF-93430 VilletaneuseFrance Institut de Chimie et des Matériaux paris-Est UMR 7182 CNRS-UPEC2-8 Rue Henri Dunant94320 ThiaisFrance ST Microelectronics 16 Rue Pierre et Marie CurieTours 37100France

In the present work, dense perovskite ceramics were successfully prepared from a series of La1-xBaxCoO3 solid solutions in the range of substitution 0 ≤ x ≤ 0.75 using solid state reaction and conventional sintering. Structural properties of La1-xBaxCoO3 were systematically investigated and thermoelectric properties were measured in the temperature range of 330–1000 K. The results show that the thermoelectric properties of Ba-substituted LaCoO3 depend on x. Indeed, at 330 K, electrical conductivity presents an optimum value for x = 0.25 with a value of σmax ≈ 2.2×105 S·m–1 whereas the Seebeck coefficient decreases when x and/or the temperature increases. The Ba-substituted LaCoO3 samples exhibit p-type semiconducting behaviour. The best power factor value found is 3.4×10–4 W·m–1·K–2 at 330 K for x = 0.075, which is 10% higher than the optimum value measured in La1–xSrxCoO3 for x = 0.05. The thermal diffusivity and thermal conductivity increase with increasing temperature and Ba concentration. La1-xBaxCoO3 shows a maximum figure of merit(ZT = 0.048) for x = 0.05 at 330 K, 25% higher than the best value in La1–xSrxCoO3 compounds.

关键词： perovskite Ba-substituted LaCoO_(3) oxide thermoelectric p-type semiconductor