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EMF of Hot Charge Carriers Arising at the p-n-junction under the Influence of the Microwave Field and Light

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Journal of Electromagnetic Analysis and Applications 2015年第12期7卷 302-307页

作者： Gafur Gulyamov Muhammadjon Gulomkodirovich Dadamirzaev nosir Yusupjanovich Sharibayev ne’matjon Zokirov namangan Engineering pedagogical Institute Namangan Uzbekistan

It is shown that the increase in the current of an asymmetric p-n-junction, caused by perturbation of potential barrier height and increasing recombination current in a strong microwave field, is suppressed by light generated photo carriers, leading to the displacement of current-voltage characteristics of p-n-junction into the direction of smaller current values.

关键词： photocurrent lasing and recombination currents hot electrons the microwave field light p-n-junction

The Effect of Light on the CVC of Strained p-n-junction in a Strong Microwave Field

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Journal of Modern physics 2015年第15期6卷 2275-2279页

作者： Muhammadjon Gulomkodirovich Dadamirzaev namangan Engineering pedagogical Institute Namangan Uzbekistan

For the first time the effect of light on the CVC of strained p-n-junction in a strong microwave field is examined. It is shown that the deformation and the microwave field increase the current through p-n-junction, and the light decreases it. The mechanism of this phenomenon is explained by the fact that under heating of the charge carriers by microwave field the recombination current arises, and under the action of light the generation current arises which are directed oppositely. And under the influence of the deformation the band gap of the semiconductor will be changed.

关键词： Hot Electrons and Holes The Microwave Field p-n-junction Light photocurrent Lasing and Recombination Currents Deformation CVC Strain p-n-junction

The nonideality Coefficient of Current-Voltage Characteristics for Asymmetric p-n-junctions in a Microwave Field

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Journal of Applied Mathematics and physics 2015年第12期3卷 1679-1683页

作者： Gafur Gulyamov Muhammadjon Gulomkodirovich , Dadamirzaev Hasan Yusupovich Mavlyanov namangan Engineering pedagogical Institute Namangan Uzbekistan namangan State University Namangan Uzbekistan

It is shown that the nonideality coefficient m actually depends on the electron temperature Te, and the hole temperature Th. We get more general expression for the nonideality coefficient, taking into account the concentration of electrons and holes, as well as their temperature, coefficient and diffusion length, the temperature of the phonons, the applied voltage, and the height of the potential barrier.

关键词： Hot Electrons The Microwave Field The Open Circuit Voltage Short Circuit Current Current-Voltage Characteristics of p-n-junction The nonideality Coefficient

nonlinear properties of an Inhomogeneous Diode Structure in a Strong Microwave Field

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World Journal of Condensed Matter physics 2023年第1期13卷 1-13页

作者： Sanobar Reymbaeva Gulmurza Abdurakhmanov Aleksandra Orel physical Department National University of Uzbekistan Tashkent Uzbekistan

Results of experimental investigation of detection (rectification) of high power X-band microwave signal in diodes of various design (semiconductor p-n-junction, point-contact, Schottky, Metal-Isolator-Metal—MIM) are reported. The maximum of the detected direct voltage V vs. power p of microwave signal and subsequent polarity reversal, previously found in MIM diodes in the optical and microwave bands, have found to be characteristic of all investigated diodes as well. After the reversal of polarity, this dependence comes linear, and the sign of the voltage corresponds to thermoEMF. In some diodes, the hysteresis on V(p) was observed. All 5 types of V(p) of MIM diodes (have made from different pairs of metals), reported earlier, were reproduced on same p-n-junction diode by variable external DC bias. These results joined with abnormal frequency cutoff forced to suggest that there is an unknown mechanism for direct flow of charge carriers (and for generate direct current) in the high-frequency electrical field, which differs from the conventional rectification.

关键词： Quadratic Detection p-n-junction point Contact Schottky Barrier High-power Microwave Signal polarity Reversal ThermoEMF Hysteresis

Heating of the Electrons and the Rectified Current at the Contacts That Are in an Alternating Electromagnetic Field

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World Journal of Condensed Matter physics 2015年第1期5卷 48-53页

作者： G. Gulyamov M. G. Dadamirzaev namangan Engineering pedagogical Institute Namangan Uzbekistan

The paper deals with the heating of electrons and current rectification in contact, which is located in an alternating electromagnetic field. It was found that the electrical component of the microwave (UHF) waves inside the p-n-junction was curved. This leads to the perpendicular component of the electric field of the microwave wave. This component modulates the height of the potential barrier with the frequency of the microwave. In the p-n-junction, straightening microwave current occurs. It is shown that the rectifying contact in the microwave electromagnetic field is always an electromotive force. This is due to carrier heating and straightening microwave current. It is shown that electron heating and straightening of the microwave power will lead to higher ideality factor of the diode.

关键词： Hot Electrons The Microwave Field The Open Circuit Voltage Short Circuit Current CVC p-n-junction

Active and Capacitive Conductance of the Diode in a Strong Microwave Field

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Journal of Applied Mathematics and physics 2015年第12期3卷 1684-1687页

作者： Muhammadjon Gulomkodirovich Dadamirzaev namangan Engineering pedagogical Institute Namangan Uzbekistan

It is shown that the mean value of the capacitive current arising in the p-n-junction in a microwave field is zero, and the average value of the active current independently of the current value is different from zero... 详细信息

关键词： Hot Electrons The Microwave Field The Active and Capacitive Conductivity Fault Current p-n-junction

Introduction to Thermo-photo-Electronics

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Journal of Electronic & Information Systems 2023年第1期5卷 51-66页

作者： Stanislav Ordin The Russian Academy of Sciences Saint Petersburg119991Russia

Building the foundations of Thermo-photo-Electronics became possible only after the correction of thermodynamic errors in the traditional theory of semiconductor Electronics and *** is these errors that determined the output of the asymptotics of the operating parameters of semiconductor electronic devices,in particular,both the saturation of the limiting clock frequency of processors,and the saturation of the efficiency of both thermoelectric and photoelectric *** in semiconductors,although these thermodynamic errors manifested themselves not only in the instrumental,but also in the technological aspect,they could not prohibit semiconductor Electronics itself,unlike Electronics based on other ***’s just that a number of qualitative mistakes were made in the theory of semiconductor devices and photo *** this work,it is shown that the energy band diagram of semiconductor contacts itself was constructed with a significant omission-without taking into account the temperature force on the *** the same time,because of the incorrect calculation of currents according to the outdated formulas of Richardson-Langmuir-Deshman,there were also *** the practitioners compensated for the errors of the theory with“empirical corrections”.So electronics engineers often made devices not according to a strict theory(which simply did not exist until now),but on a hunch and according to empirical local *** only the correction of the historical mistakes made it possible to expand the phenomenology of the description of processes in a Solid Body,on the basis of which it is possible to make calculations of highly efficient elements of photo-Thermo-Electronics.

关键词： phenomenology potential barriers p-n-junction prigogine local entropy production Richardson-Langmuir models Local thermo-EMF