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Resistance of Si_2N_2O ceramics to oxidation and erosion of molten silica

中国有色金属学会会刊：英文版 2000年第3期10卷 418-420页

作者： WANG Si qing(王思青) 1, YAN Yu hua(阎玉华) 2 1. Department of Materials Engineering and Applied Chemistry, National University of Defense Technology, Changsha 410073, P.R.China 2. Biomaterials Engineering Center, Wuhan University of Technology, W 国防科技大学湖南长沙武汉工业大学湖北武汉

Si 2N 2O ceramics was fabricated from powder by hot pressing in N 2 atmosphere. The resistance of the ceramic sample to oxidation and erosion of molten silica was investigated. The bulk density and open porosity of the ceramic sample were measured according to the Archimedes principle in water. Then fracture surface of the sintered body was observed by SEM. The results and analysis indicate that the resistance of Si 2N 2O ceramics to oxidation and erosion of molten silica increases when its density increases and/or its open porosity decreases. Moreover, they also reveal that the oxidation process is an unsteady dispersing process with oxygen as the constant source, and the resistance to erosion of molten silica related to the quantity of grain boundary in unit surface area. The lowest mass gain is 2.4 g/m 2 after oxidizing at 1 000 ℃ for 100 h in air, while the lowest mass loss is 2.9 g/m 2 after 40 h erosion in molten silica.

关键词： silicon oxynitride ceramics chemical stability

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Preparation and mechanical properties of Si_2N_2O ceramics

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中国有色金属学会会刊：英文版 2000年第4期10卷 516-519页

作者：王思青阎玉华国防科技大学湖南长沙武汉工业大学湖北武汉

Si 2N 2O ceramics was fabricated from pre synthesized Si 2N 2O powder by the hot pressed sintering method. The results indicated that the highest relative density and hardness(HRA) of the sample are almost 100% and 93, respectively. Moreover, effects of some experimental parameters (such as the amount of sintering aid agent Y 2O 3, sintering time and temperature) on the density and microstructure of ceramics were investigated, and effects of the density and micro structure on some mechanical properties(HRA, σ f and K IC ) were also discussed.

关键词： silicon oxynitride preparation ceramics properties

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Composite Stable to Corrosive Media in SiC-AL2O3-Si2ON2System

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Journal of Electronics Cooling and Thermal Control 2013年第2期3卷 74-84页

作者： Z. D. Kovziridze N. S. Nizharadze G. Tabatadze M. Mshvildadze E. Nikoleishvili Z. Mestvirishvili Department of Chemical and Biological Technologies Georgian Technical University Tbilisi Georgia

The object of the research was to study the composite received in impure nitrogen medium from silicon carbide, silicon and refractory clay mixture. With X-ray diffraction, petrographic and electron microscope methods the chemical processes happening at burning of the mentioned mixture in technical nitrogen medium and the kind of received binder, phase composition and basic properties are studied. It is stated that silicon carbide composite with complex binder is received, the main phases being: Si2ON2, 3Al2O3· 2SiO2 and SiO2. SiC-Al2O3 composite is also received and studied. Water and acid resistance of composites (H2SO4, r—1.84 g/sm3) and resistance to nonferrous metals and slag are studied. The received composites can be used for production of protective envelope of thermocouple for measuring of temperature of ferrous and nonferrous metals at high temperatures.

关键词： Composite Silicon Carbide Nitrogen Area Silicon oxynitride Resistance

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Application of tantalum-based compounds in renewable energy

Application of tantalum-based compounds in renewable energy

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第三届新型太阳能电池学术研讨会

作者：周笑 Yanfang Liu Taihong Zhang Yunzhi Hou Wen Fang Jing Li 云斯宁西安建筑科技大学材料与矿资学院功能材料研究所

Dye-sensitized solar cells(DSCs) have attracted remarkable attention due to their high efficiency,environmentally friendly and low *** an indispensible part of DSCs,the counter electrode(CE) plays a crucial role in high efficient ***,it is significant to develop advanced CE materials for high-performance *** previous work demonstrated that tantalum-based oxides as CEs exhibited remarkable catalytic properties for the reduction of I in *** the present work,the tantalum-based oxides converted tantalum oxynitride and tantalum nitride successfully,and the catalytic properties of tantalum-based compounds in DSCs had an evident promotion after nitriding ***-based oxides as accelerants in anaerobic digestion produce cumulative biogas yield of 480-510 ml/g TS,and COD degradation rate of 36%-42%.

关键词： tantalum-based compounds catalysts dye-sensitized solar cells oxynitride anaerobic digestion accelerant

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Preparation and luminescence properties of Y3+-doped Ba-Al-Si-O-N:0.1Eu2+ green-emitting phosphors

Preparation and luminescence properties of Y3+-doped Ba-Al-S...

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中国化学会第九届全国无机化学学术会议

作者： Xin Huang Zong-liang Xiao Qin Li Yang Luo Wei-xiong You Xin-yu Ye School of Metallurgy and Chemistry Engineering Jiangxi University of Science and Technology School of Material Science and Engineering Jiangxi University of Science and Technology

Y3+-doped Ba0.9Al Si0.6O3.4N0.6:0.1Eu2+ green-emitting phosphors have been prepared under N2/H2 or ammonia via a solid state reaction method. The luminescence properties, structure and morphology of the samples are measured and characterized by fluorescence spectrophotometer, XRD and SEM, respectively. The as-prepared phosphors have a broad excitation band of 260-470 nm, which can be excited effectively by the UV and blue light. An intensive peak locates at 510 nm on the emission spectrum, which is attributed to the 4f65d→4f7 transitions of Eu2+. It is revealed that the doping of Y3+ does not change the original hexagonal lattice structure of Ba0.9Al1.4Si0.6O3.4N0.6:0.1Eu2+.The particles show uniform distribution without obvious aggregation. The emission intensities were greatly improved by Y3+ doping and the best doping concentration of Y3+ ions is 35mol%. The relative fluorescence intensity of Y3+-doped sample is 2.7 times greater than that of un-doped sample. The oxynitride-based phosphor demonstrates low thermal quenching. The phosphors are potential candidates for phosphor-converted LEDs in lighting and display products.

关键词： oxynitride green phosphor solid state reaction luminescence

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Nitridation-Etch of Silicon Oxide in Fluorocarbon/Nitrogen Plasma:A Computational Study

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Journal of Microelectronic Manufacturing 2019年第1期2卷 19-26页

作者： Du Zhang Yu-Hao Tsai Hojin Kim Mingmei Wang TEL Technology Center AmericaLLC255 Fuller RoadSuite 214AlbanyNew York 12203

The continually increasing number of silicon oxide(SiO2)and nitride(Si3N4)layers in 3D-NAND offers both motivations and challenges for developing all-in-one plasma etch solutions for etching SiO2 and Si3N4 at a selectivity near unity while maintaining a high etch *** is essential for a simultaneous etch landing of all holes that differ in their respective SiO2 and Si3N4 layer numbers and dummy SiO2 thickness,and for a quick wafer *** modification may be employed to make the SiO2 and Si3N4 layers closer in composition,either by converting Si3N4 to oxynitride(SiOxNy)[***.1,20180102(2018)],or by converting SiO2 to SiOxNy,presented in this *** computationally demonstrate the feasibility of a nitridation-etch process for SiO2 in fluorocarbon/nitrogen-based plasma with molecular dynamics(MD)and quantum chemistry(QC)***,the nitridation via ion implantation is observed with MD,which replaces surface oxygen by ***,the reactions involving oxygen and silicon volatilization are energetically favorable per QC ***,both MD and QC simulations indicate a synergy between fluorine and nitrogen etchants by enhancing each other’s reactivity with the SiO2 *** atomistic surface reaction mechanisms will offer insight for the development of robust engineering solutions for 3D-NAND fabrication.

关键词： 3D-NAND oxide nitride oxynitride plasma etch molecular dynamics quantum chemistry

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Silicon Nitride Etch via Oxidation Reaction in Fluorocarbon/Oxygen Plasma:A First-Principle Study

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Journal of Microelectronic Manufacturing 2018年第1期1卷 2-10页

作者： Yu-Hao Tsai Du Zhang Mingmei Wang TEL Technology Center AmericaLLC255 Fuller RoadSuite 214AlbanyNew York 12203

Conducting all-in-one etch process for 3D-NAND fabrication requires close etch rate(E/R)for SiO2 and Si3N4;however,to attain comparable and high etch rate for both materials is *** this work,we performed first-principle studies on the etching mechanism of Si3N4 in fluorocarbon/oxygen *** feasibility of using fluorocarbon/oxygen plasma to etch Si3N4 while attaining close E/R to SiO2 through the complementary nitride to oxynitiride(SiOxNy)transformation has been *** transformation involves two stages:N atom elimination and Si-O bond *** modeling the essential chemical reactions on the Si3N4 surface,we shed light upon the underlying mechanisms behind both *** simulated the N-elimination reactions involving the formation and desorption of NO and FNO molecules as well as the substitution with F *** found that N atoms can be eliminated by forming NO molecules,especially with the assistance of F-substitution in Si-N bond *** predicted O-additive energies indicates that forming SiOxNy structure after N-elimination is *** that,the dependency of chemistries favoring either high E/R or active SiOxNy formation on the fluorocarbon/oxygen ratio was *** hope that the work will build a foundation for future studies on pursuing all-in-one ON etch process via the surface modifications.

关键词： 3D-NAND oxide nitride oxynitride plasma etch first-principle

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