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Recent advances in resistive random access memory based on lead halide perovskite

InfoMat 2021年第3期3卷 293-315页

作者： Jiayu Di Jianhui Du Zhenhua Lin Shengzhong(Frank)Liu Jianyong Ouyang Jingjing Chang State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology Shaanxi Joint Key Laboratory of GrapheneSchool of MicroelectronicsXidian UniversityXi'anChina Advanced Interdisciplinary Research Center for Flexible Electronics Xidian UniversityXi'anChina Key Laboratory of Applied Surface and Colloid Chemistry Ministry of EducationShaanxi Key Laboratory for Advanced Energy DevicesShaanxi Engineering Lab for Advanced Energy TechnologyInstitute for Advanced Energy MaterialsSchool of Materials Science and EngineeringShaanxi Normal UniversityXi'anChina Department of Materials Science and Engineering National University of SingaporeSingaporeSingapore

Lead halide perovskites have attracted increasing attention in photovoltaic devices,light-emitting diodes,photodetectors,and other fields due to their excellent *** optoelectronic devices,growing numbers of studies have focused on the perovskite-based electrical devices in the past few years,such as transistors and resistive random access memories(RRAMs).Here,this article summarizes the recent progress the researchers have made of RRAM ***,the working mechanism and the key parameters of RRAM are ***,the working principles,including the conductive filament model(containing the types of the model of the metal cationsinduced filament and the model of the ions migration in bulk),the interface effect,and the electronic effect are the origins of the RRAM behaviors,and hence,various factors that affect the device performance are ***,RRAMs based on organolead halide perovskite and all-inorganic perovskite are discussed in terms of different structures,different compositions,and different fabrication ***,a brief conclusion and a broad outlook are given on the progress and challenges in the field of perovskite-based RRAMs.

关键词： all-inorganic perovskites conductive filament models organolead halide perovskites resistive random access memories resistive switching

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引用

Science Bulletin 2016年第9期61卷 665-669页

作者：赵春一田文明冷静崔荣荣刘维峰金盛烨 School of Physics and Optoelectronic Engineering Dalian University of Technology State Key Laboratory of Molecular Reaction Dynamics Dalian Institute of Chemical Physics Chinese Academy of Sciences

Understanding the correlation between the life- time, mobility and diffusion length of photoinduced charge carriers in organolead halide perovskite is essential to suc- cessful perovskite-based solar cells. In this paper, through mapping the local photoluminescence （PL） dynamics using laser/PL-scanned confocal imaging microscopy and simu- lating the carrier diffusion process in an individual CH3NH3PbI3 single-crystalline particle, we report that the rapid diffusion of charge carriers can produce a fast local PL kinetics when the perovskite is partially excited. This result indicates that using PL kinetics to estimate the carrier life- time in perovskite single crystals needs to exclude the effect of carrier diffusion.

关键词： organolead halide perovskites Carrierdiffusion Photoluminescence kinetics

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