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Cornerstone of molecular spintronics: Strategies for reliable organic spin valves

Nano Research 2021年第11期14卷 3653-3668页

作者： Shuaishuai Ding Yuan Tian Wenping Hu Tianjin Key Laboratory of Molecular Optoelectronic Sciences Department of ChemistrySchool of SciencesTianjin UniversityTianjin300072China School of Physics&Electronics Hunan UniversityHunan410082China Collaborative Innovation Center of Chemical Science and Engineering Tianjin300072China Joint School of National University of Singapore and Tianjin University International Campus of Tianjin UniversityBinhai New CityFuzhou350207China

organic spin valve (OSV), one of the most promising and representative devices involving spin injection, transport and detection, has drawn tremendous attention owing to their ultra-long spin relaxation time in the field of molecular spintronics. Since the first demonstration of truly worked vertical OSV device in 2004, efforts in enhancement of high performance and pursuit of spin-related nature have been devoted in related field. It offers a new opportunity to develop the integrated flexible multi-functional arrays based on spintronics in the future. However, the unreliable working state in OSVs due to the lack of exploration on interface control will cause severe impact on the performance evaluation and further restrict their practical application. Herein, we focus on the recent progress in strategies for reliable fabrication and evaluation of typical OSVs in vertical configuration. Firstly, the challenges in protection of two spin interface properties and identification of spin-valve-like signals were proposed. Then, three points for attention including selection of bottom electrodes, optimization of organic spacer, and prevention of metal penetration to improve the device performance and reliability were mentioned. Particularly, various modified strategies to solve the “dead layer” issue were highlighted. Furthermore, we discussed the general protocols in the reliable evaluation of OSVs’ performance and transport mechanism identification. Notably, several key fundamentals resulting in spurious magnetoresistance (MR) response were illustrated. Finally, we also highlighted the future perspectives on spintronic devices of organic materials.

关键词： molecular spintronics organic spin valves magnetoresistance device reliability fair performance evaluation

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The basis of organic spintronics: Fabrication of organic spin valves

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Chinese Physics B 2014年第1期23卷 21-27页

作者：陈彬彬姜生伟丁海峰蒋正生吴镝 National Laboratory of Solid State Microstructures and Department of Physics Nanjing University

organic spintronics focuses on utilizing the spin degree of freedom in organic materials because of the long spin relaxation time. The vertical organic spin valve(OSV) is a typical sample structure used to study the spin transport phenomena. However, the fabrication of high quality OSVs is difficult, which results in controversial experiment results and hence hinders the development of organic spintronics. In this work, we describe our recent study on the fabrication of typical vertical organic spin valves, La0.67Sr0.33MnO3(LSMO)/Alq3/Co. The LSMO bottom electrodes are annealed to obtain an atomically smooth surface and improved magnetic properties. The top Co electrodes are deposited by an indirect deposition method to reduce the interfusion between Co and Alq3. The controlled fabrication process provides much better performance and sample yield of OSVs.

关键词： organic spintronics organic spin valves magnetoresistance

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Giant Magnetoresistance in La0.67Ca0.33MnO3/Alq3/Co Sandwiched-Structure organic spin valves

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Chinese Physics Letters 2006年第6期23卷 1566-1569页

作者：庞智勇陈延学刘甜甜张云鹏解士杰颜世申韩圣浩 School of Physics and Microelectronics State Key Laboratory of Crystal Materials Shandong University Jinan 250100

La0.67Ca0.33MnO3/Alq3/Co sandwiched-structure organic spin valves are fabricated by vacuum thermal evaporation method. A giant magnetoresistance （GMR） of 14% is observed at low temperature lOOK. At 3OK, the magnetoresistance can increase to 50%. The large GMR of the device is attributed to the high spin polarization and low conductivity of the La0.67Ca0.33MnO3 contact. The magnetoresistance AR/R and the coercive field of the Co electrode depend strongly on temperature. The large high-field magnetoresistance reported on La0.67Sr0.33MnO3/Alq3/Co organic spin valves [Nature 427 （2004） 821] is not observed in our La0.67Ca0.33MnO3/Alq3/Co organic spin valves.

关键词： La0.67Ca0.33MnO3/Alq3/Co Giant Magnetoresistance organic spin valves

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