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Silicon-based optoelectronic synaptic devices

Chinese Physics B 2020年第7期29卷 1-14页

作者：尹蕾皮孝东杨德仁 State Key Laboratory of Silicon Materials and School of Materials Science and Engineering Zhejiang UniversityHangzhou 310027China

High-performance neuromorphic computing(i.e.,brain-like computing)is envisioned to seriously demand optoelectronically integrated artificial neural networks(ANNs)in the future.optoelectronic synaptic devices are critical building blocks for optoelectronically integrated ANNs.For the large-scale deployment of high-performance neuromorphic computing in the future,it would be advantageous to fabricate optoelectronic synaptic devices by using advanced silicon(Si)technologies.This calls for the development of Si-based optoelectronic synaptic devices.In this work we review the use of Si materials to make optoelectronic synaptic devices,which have either two-terminal or three-terminal structures.A series of important synaptic functionalities have been well mimicked by using these Si-based optoelectronic synaptic devices.We also present the outlook of using Si materials for optoelectronic synaptic devices.

关键词： silicon optoelectronic synaptic devices neuromorphic computing

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Silicon-based inorganic-organic hybrid optoelectronic synaptic devices simulating cross-modal learning

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Science China(Information Sciences) 2021年第6期64卷 188-195页

作者： Yayao LI Yue WANG Lei YIN Wen HUANG Wenbing PENG Yiyue ZHU Kun WANG Deren YANG Xiaodong PI State Key Laboratory of Silicon Materials School of Materials Science and EngineeringZhejiang University Advanced Semiconductor Research Institute ZJU-Hangzhou Global Scientific and Technological Innovation Center

With advances in Si-based technology infrastructures and the rapid integration of Si-based optoelectronics, Si-based optoelectronic synaptic devices have the potential to greatly facilitate the large-scale deployment of neuromorphic computing. The incorporation of solution-processable polymer semiconductors into Si-based optoelectronics may enable the cost-effective fabrication of optoelectronic synaptic devices.Poly(3-hexylthiophene)(P3HT) is a semiconducting polymer used to manufacture optoelectronic synaptic transistors with P3HT channels and Si gates. The gate dielectric between them consists of a SiO2layer.Hybrid inorganic-organic Si/P3HT optoelectronic synaptic transistors can mimic synapses when exposed to optical and electrical stimuli. The Si/P3HT synaptic devices can spatiotemporally integrate optical and electrical stimuli to mimic cross-modal learning.

关键词： poly(3-hexylthiophene) silicon optoelectronic synaptic devices cross-modal learning transistor

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An oxide-based heterojunction optoelectronic synaptic device with wideband and rapid response performance

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Journal of Materials Science & Technology 2022年第28期123卷 159-167页

作者： Chunmei Li Jinyong Wang Dongyang Li Nasir Ilyas Zhiqiang Yang Kexin Chen Peng Gu Xiangdong Jiang Deen Gu Fucai Liu Yadong Jiang Wei Li School of optoelectronic Science and Engineering University of Electronic Science and Technology of ChinaChengdu 611731China State Key Laboratory of Electronic Thin Films and Integrated devices University of Electronic Science and Technology of ChinaChengdu 611731China Key Laboratory of Information Materials of Sichuan Province and School of Preparatory Education Southwest Minzu UniversityChengdu 610041China

With the rapid development of science and technology,the emergence of new application scenarios,such as robots,driverless vehicles and smart city,puts forward high requirements for artificial visual systems.optoelectronic synaptic devices have attracted much attention due to their advantages in sensing,memory and computing integration.In this work,via band structure engineering and heterostructure designing,a heterojunction optoelectronic synaptic device based on Cu doped with n-type SrTiO_(3)(Cu:STO)film combined with p-type CuAlO_(2)(CAO)thin film was fabricated.It is found surprisingly that the optoelectronic device based on Cu:STO/CAO p-n heterojunction exhibits a rapid response of 2 ms,and that it has a wideband response from visible to near-infrared(NIR)region.Additionally,a series of important synaptic functions,including excitatory postsynaptic current(EPSC),paired-pulse facilitation(PPF),shortterm potentiation(STP)to long-term potentiation(LTP)transition,learning experience behavior and image sharpening,have been successfully simulated on the device.More importantly,the performance of the device remains still stable and reliable after several months which were stored at room temperature and atmospheric pressure.Based on these advantages,the optoelectronic synaptic devices demonstrated here provide great potential in the new generation of artificial visual systems.

关键词： Cu:STO/CAO heterojunction optoelectronic synaptic devices Vis to NIR wideband Rapid response Artificial visual system

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Reconfigurable photovoltaic effect for optoelectronic artificial synapse based on ferroelectric p-n junction

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Nano Research 2021年第11期14卷 4328-4335页

作者： Yanrong Wang Feng Wang Zhenxing Wang Junjun Wang Jia Yang Yuyu Yao Ningning Li Marshet Getaye Sendeku Xueying Zhan Congxin Shan Jun He CAS Center for Excellence in Nanoscience CAS Key Laboratory of Nanosystem and Hierarchical FabricationNational Center for Nanoscience and TechnologyBeijing100190China Key Laboratory of Artificial Micro-and Nano-structures of Ministry of Education School of Physics and TechnologyWuhan UniversityWuhan430072China Center of Materials Science and optoelectronics Engineering University of Chinese Academy of SciencesBeijing100049China Sino-Danish college University of Chinese Academy of SciencesBeijing100049China Sino-Danish Centre for Education and Research Beijing100049China School of Physics and Engineering Zhengzhou UniversityZhengzhou450001China

Neuromorphic machine vision has attracted extensive attention on wide fields.However,both current and emerging strategies still suffer from power/time inefficiency,and/or low compatibility,complex device structure.Here we demonstrate a driving-voltage-free optoelectronic synaptic device using non-volatile reconfigurable photovoltaic effect based on MoTe_(2)/α-In_(2)Se_(3) ferroelectric p-n junctions.This function comes from the non-volatile reconfigurable built-in potential in the p-n junction that is related to the ferroelectric polarization inα-In_(2)Se_(3).Reconfigurable rectification behavior and photovoltaic effect are demonstrated firstly.Notably,the figure-of-merits for photovoltaic effect like photoelectrical conversion efficiency non-volatilely increases more than one order.Based on this,retina synapse-like vision functions are mimicked.optoelectronic short-term and long-term plasticity,as well as basic neuromorphic learning and memory rule are achieved without applying driving voltage.Our work highlights the potential of ferroelectric p-n junctions for enhanced solar cell and low-power optoelectronic synaptic device for neuromorphic machine vision.

关键词： ferroelectric p-n junction reconfigurable rectification reconfigurable PV effect optoelectronic synaptic devices

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