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optically pumped wavelength-tunable lasing from a GaN beam cavity with an integrated Joule heater pivoted on Si

Chinese Physics B 2023年第5期32卷 478-484页

作者：秦飞飞孙阳杨颖李欣王旭卢俊峰王永进朱刚毅 GaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province College of Telecommunications and Information EngineeringNanjing University of Posts and TelecommunicationsNanjing 210003China Key Laboratory of Broadband Wireless Communication and Sensor Network Technology(Nanjing University of Posts and Telecommunications Ministry of Education)Nanjing 210003China Department of Microelectronic Science and Engineering School of Physical Science and TechnologyNingbo UniversityNingbo 315211China College of Physics Nanjing University of Aeronautics and AstronauticsNanjing 211106China

Dynamically tunable laser sources are highly promising for realizing visionary concepts of integrated photonic circuits and other applications. In this paper, a Ga N-based laser with an integrated PN junction heater on Si is *** photoluminescence properties of the Ga N beam cavity are controlled by temperature, and the Joule heater provides electrically driven regulation of temperature. These two features of the cavity make it possible to realize convenient tuning of the lasing properties. The multi-functional Ga N beam cavity achieves optically pumped lasing with a single mode near 362.4 nm with a high Q-factor of 1394. The temperature of this device increases by 0–5℃ under the Joule heating effect. Then, electrical control of the lasing mode is demonstrated. The lasing resonant peak shows a continuous redshift of about 0.5 nm and the device also exhibits dynamic switching of its lasing mode. The lasing modulation can be ascribed to temperature-induced reduction of the bandgap. Our work may be of benefit for external optical modulation in future chip-based optoelectronic devices.

关键词： GaN beam cavity optically pumped lasing dynamically tunable laser source Joule heater

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