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High-speed optoelectronic devices

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Science China(Information Sciences) 2023年第5期66卷 5-27页

作者： Yi LUO Changzheng SUN Bing XIONG Jian WANG Zhibiao HAO Yanjun HAN Hongtao LI Lai WANG Beijing National Research Center for Information Science and Technology (BNRist) Department of Electronic Engineering Tsinghua University

High-speed optoelectronic devices are key components of modern fiber communication systems,and the backbone of information technology. In this paper, we present our work on high-speed devices over the past decades, including high-performance semiconductor lasers and integrated light sources, wideband electrooptic modulators, high saturation power photodetectors, and their applications in both fiber communications and microwave photonics. Gain-coupled distributed feedback(DFB) lasers were fabricated with high singlemode yield. Electroabsorption modulated lasers(EMLs) were demonstrated based on identical epitaxial layer integration scheme, including single channel 40 Gb/s EMLs, and 4 × 25 and 4 × 56 Gb/s EML arrays. Both In P and thin-film lithium niobate based low half-wave voltage electro-optic modulators with modulation bandwidth over 40 GHz were demonstrated. Back-illuminated modified uni-traveling-carrier photodetectors(MUTC-PDs) with high saturation power and bandwidth exceeding 100 GHz were developed. Applications of high-speed optoelectronic devices in fiber-optic links and sub-THz wave generation are presented.

关键词： optoelectronic devices semiconductor lasers optical modulators photodetectors integrated photonic circuits

Broadband all-fiber optical phase modulator based on photo-thermal effect in a gas-filled hollow-core fiber

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Opto-Electronic Advances 2023年第5期6卷 10-16页

作者： Shoulin Jiang Feifan Chen Yan Zhao Shoufei Gao Yingying Wang Hoi Lut Ho Wei Jin Photonics Research Center the Hong Kong Polytechnic University Shenzhen Research InstituteShenzhen 518057China Department of Electrical Engineering and Photonics Research Institute the Hong Kong Polytechnic UniversityHong Kong 999077China Institute of Photonics Technology Jinan UniversityGuangzhou 510632China

We report broadband all-fiber optical phase modulation based on the photo-thermal effect in a gas-filled hollow-core fiber.The phase modulation dynamics are studied by multi-physics simulation.A phase modulator is fabricated using a 5.6-cm-long anti-resonant hollow-core fiber with pure acetylene filling.It has a half-wave optical power of 289 mW at 100 kHz and an average insertion loss 0.6 dB over a broad wavelength range from 1450 to 1650 nm.The rise and fall time constants are 3.5 and 3.7μs,respectively,2–3 orders of magnitude better than the previously reported microfiber-based photo-thermal phase modulators.The gas-filled hollow-core waveguide configuration is promising for optical phase modulation from ultraviolet to mid-infrared which is challenging to achieve with solid optical fibers.

关键词： optical modulators photo-thermal effects hollow-core fibers

High-speed and broad optical bandwidth silicon modulator

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Chinese Physics B 2013年第11期22卷 125-129页

作者：徐浩李显尧肖希李智勇俞育德余金中 State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences

A high-speed silicon modulator with broad optical bandwidth is proposed based on a symmetrically configured Mach- Zehnder interferometer. Careful phase bias control and traveling-wave design are used to improve the high-speed perfor- mance. Over a broadband wavelength range, high-speed operation up to 30 Gbit/s with a 4.5 dB-5.5 dB extinction ratio is experimentally demonstrated with a low driving voltage of 3 V.

关键词： optical modulators integrated optics optoelectronic device characterization

Recent development of saturable absorbers for ultrafast lasers [Invited]

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Chinese Optics Letters 2021年第8期19卷 32-57页

作者：张梦羽陈浩尹金德王金涛王金章闫培光 Shenzhen Key Laboratory of Laser Engineering College of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen 518060China

As one of the greatest inventions in the 20 th century, ultrafast lasers have offered new opportunities in the areas of basic scientific research and industrial manufacturing. optical modulators are of great importance in ultrafast lasers, which directly affect the output laser performances. Over the past decades, significant efforts have been made in the development of compact, controllable, repeatable, as well as integratable optical modulators(i.e., saturable absorbers). In this paper, we review the fundamentals of the most widely studied saturable absorbers, including semiconductor saturable absorber mirrors and low-dimensional nanomaterials. Then, different fabrication technologies for saturable absorbers and their ultrafast laser applications in a wide wavelength range are illustrated. Furthermore, challenges and perspectives for the future development of saturable absorbers are discussed and presented. The development of ultrafast lasers together with the continuous exploration of reliable saturable absorbers will open up new directions for the mass production of the nextgeneration optoelectronic devices.

关键词： SESAMs low-dimensional materials nonlinear optical properties optical modulators ultrafast lasers

High speed optical modulation in Ge quantum wells using quantum confined stark effect

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Frontiers of Optoelectronics 2012年第1期5卷 82-89页

作者： Yiwen RONG Yijie HUO Edward T.FE Marco FIORENTINO Michael R.T.TAN Tomasz OCHALSKI Guillaume HUYET Lars THYLEN Marek CHACINSKI Theodore I.KAMINS James S.HARRIS Department of Electrical Engineering Stanford UniversityStanfordCA 94305USA Quantum Science Research Hewlett-Packard LaboratoriesPalo AltoCA 94304USA Tyndall National Institute Lee MaltingsPhotonics BuildingCorkIreland Photonics and Microwave Engineering Royal Institute of Technology Kista Stockholm S-16440Sweden

We focus on the optimization of SiGe material deposition, the minimization of the parasitic capacitance of the probe pads for high speed, low voltage and high contrast ratio operation. The device fabrication is based on processes for standard Si electronics and is suitable for mass-production. We present observations of quantum confinement and quantum-confined Stark effect （QCSE） electroabsorption in Ge quantum wells （QWs） with SiGe barriers grown on Si substrates. Though Ge is an indirect gap semiconductor, the resulting effects are at least as clear and strong as seen in typical III-V QW structures at similar wavelengths. We also demonstrated a modulator, with eye diagrams of up to 3.5 GHz, a small driving voltage of 2.5 V and a modulation bandwidth at about 10 GHz. Finally, carrier dynamics under ultra-fast laser excitation and high- speed photocurrent response are investigated.

关键词： electroabsorption effect Ge optical intercon-nections optical modulators quantum-confined Stark effect（QCSE） Ge/SiGe quantum wells （QWs）

Integrated thin film lithium niobate Fabry–Perot modulator[Invited]

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Chinese Optics Letters 2021年第6期19卷 8-12页

作者：徐梦玥何名博朱运涛刘林陈立峰余思远蔡鑫伦 State Key Laboratory of Optoelectronic Materials and Technologies and School of Electronics and Information Technology Sun Yat-sen UniversityGuangzhou 510000China

Integrated traveling-wave lithium niobate modulators need relatively large device lengths to achieve low drive voltage. To increase modulation efficiency within a compact footprint, we report an integrated Fabry–Perot-type electro-optic thin film lithium niobate on insulator modulator comprising a phase modulation region sandwiched between two distributed Bragg reflectors. The device exhibits low optical loss and a high tuning efficiency of 15.7 pm/V. We also confirm the modulator's high-speed modulation performance by non-return-to-zero modulation with a data rate up to 56 Gbit/s.

关键词： integrated optic devices lithium niobate optical modulators microstructure fabrication