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Stress and morphology of a nonpolar a-plane gan layer on r-plane sapphire substrate

Chinese Physics B 2011年第10期20卷 421-425页

作者：许晟瑞郝跃张进成薛晓咏李培咸李建婷林志宇刘子扬马俊彩贺强吕玲 Key Laboratory of Wide Band-Gap Semiconductor Technology School of Microelectronics Xidian University School of Technical Physics Xidian University Zoomview Oprtoelectronic

The anisotropic strain of a nonpolar （1120） a-plane gan epilayer on an r-plane （1102） sapphire substrate, grown by low-pressure metal-organic vapour deposition is investigated by Raman spectroscopy. The room-temperature Raman scattering spectra of nonpolar a-plane gan are measured in surface and edge backscattering geometries. The lattice is contracted in both the c- and the m-axis directions, and the stress in the m-axis direction is larger than that in the c-axis direction. On the surface of this sample, a number of cracks appear only along the m-axis, which is confirmed by the scanning electron micrograph. Atomic force microscopy images reveal a significant decrease in the root-mean-square roughness and the density of submicron pits after the stress relief.

关键词： crystal morphology nonpolar gan Raman metal-organic chemical vapour deposition

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The etching of a-plane gan epilayers grown by metal-organic chemical vapour deposition

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Chinese Physics B 2010年第10期19卷 458-462页

作者：许晟瑞郝跃张进成周小伟曹艳荣欧新秀毛维杜大超王昊 School of Microelectronics Xidian University School of Electronical & Mechanical Engineering Xidian University

Morphology of nonpolar （1120） a-plane gan epilayers on r-plane （1102） sapphire substrate grown by low-pressure metal-organic vapour deposition was investigated after KOH solution etching. Many micron- and nano-meter columns on the a-plane gan surface were observed by scanning electron microscopy. An etching mechanism model is proposed to interpret the origin of the peculiar etching morphology. The basal stacking fault in the a-plane gan plays a very important role in the etching process.

关键词： crystal morphology stacking fault nonpolar gan chemical etching

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Improvement in a-plane gan crystalline quality using wet etching method

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Chinese Physics B 2014年第4期23卷 593-597页

作者：曹荣涛许晟瑞张进成赵一薛军帅哈微张帅崔培水温慧娟陈兴 Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices School of Microelectronics Xidian University

nonpolar （1120） gan films are grown on the etched a-plane gan substrates via metalorganic vapor phase epitaxy. High-resolution X-ray diffraction analysis shows great decreases in the full width at half maximum of the samples grown on etched substrates compared with those of the sample without etching, both on-axis and off-axis, indicating the reduced dislocation densities and improved crystalline quality of these samples. The spatial mapping of the E2 （high） phonon mode demonstrates the smaller line width with a black background in the wing region, which testifies the reduced dislocation densities and enhanced crystalline quality of the epitaxial lateral overgrowth areas. Raman scattering spectra of the E2 （high） peaks exhibit in-plane compressive stress for all the overgrowth samples, and the E2 （high） peaks of samples grown on etched substrates shift toward the lower frequency range, indicating the relaxations of in-plane stress in these gan films. Furthermore, room temperature photoluminescence measurement demonstrates a significant decrease in the yellow-band emission intensity of a-plane gan grown on etched templates, which also illustrates the better optical properties of these samples.

关键词： nonpolar gan wet etching metal-organic chemical vapor deposition crystalline quality

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