检索结果-南通市图书馆

A 6-7 GHz,40 dB receiver RF front-end with 4.5 dB minimum noise figure in 0.13μm CMOS for IR-UWB applications

在线全文

学校读者我要写书评

暂无评论

Journal of Semiconductors 2013年第3期34卷 90-96页

作者：秦希黄煜梅洪志良 State Key Laboratory of ASIC and System Fudan University

A wideband receiver RP front-end for IR-UWB applications is implemented in 0.13μm CMOS technology. Thanks to the direct sub-sampling architecture,there is no mixing *** LNA and VGA work at RF *** optimize noise as well as linearity,a differential common-source LNA with capacitive cross- coupling is used,which only consumes current of 1.8 mA from a 1.2 V power *** LNA,a two-stage current-steering VGA is adopted for gain *** extend the overall bandwidth,a three-stage staggered peaking technique is *** results show that the proposed receiver front-end achieves a gain tuning range from 5 to 40 dB within 6-7 GHz,a minimum noise figure of 4.5 dB and a largest IIP_3 of-11 *** core receiver (without test buffer) consumes 14 mW from a 1.2 V power supply and occupies 0.58 mm^2 area.

关键词： IR-UWB wideband receiver low-noise amplifier variable gain amplifier noise figure IIP3

Relationship Between noise figure and Equivalent Input noise Current Spectral Density for Optical Receiver Design

在线全文

学校读者我要写书评

暂无评论

Journal of Semiconductors 2006年第12期27卷 2085-2088页

作者：孙玲王志功景为平高建军东南大学射频与光电集成电路研究所南京210096 南通大学江苏省专用集成电路设计重点实验室南通226007

Based on the equivalent circuit model of a two-port optical receiver front-end,the relationship between the equivalent input noise current spectral density and the noise figure is analyzed. The derived relationship has universal validity for determining the equivalent input noise current spectral density for optical receiver designs, as verified by measuring a 155Mb/s high-impedance optical receiver ***. Good agreement between calculated and simulated results has been achieved.

关键词： optical receiver noise figure equivalent input noise current

A 0.18μm CMOS dual-band low power low noise amplifier for a global navigation satellite system

在线全文

学校读者我要写书评

暂无评论

Journal of Semiconductors 2010年第12期31卷 94-100页

作者：李兵庄奕琪李振荣靳刚 Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices School of MicroelectronicsXidian University

This paper presents a dual-band low noise amplifier for the receiver of a global navigation satellite system. The differences between single band and multi-band design methods are discussed. The relevant parameter analysis and the details of circuit design are presented. The test chip was implemented in a TSMC 0.18 μm 1P4M RF CMOS process. The LNA achieves a gain of 16.8 dB/18.9 dB on 1.27 GHz/1.575 GHz. The measured noise figure is around 1.5-1.7 dB on both bands. The LNA consumes less than 4.3 mA of current from a 1.8 V power supply. The measurement results show consistency with the design. And the LNA can fully satisfy the demands of the GNSS receiver.

关键词： CMOS low noise amplifier low power dual-band noise figure GPS RF frontend

A 0.18μm CMOS low noise amplifier using a current reuse technique for 3.1-10.6 GHz UWB receivers

在线全文

学校读者我要写书评

暂无评论

Journal of Semiconductors 2011年第8期32卷 74-79页

作者：王春华万求真 College of Information Science and Engineering Hunan University

A new,low complexity,ultra-wideband 3.1-10.6 GHz low noise amplifier（LNA）,designed in a chartered 0.18μm RFCMOS technology,is *** ultra-wideband LNA consists of only two simple amplifiers with an inter-stage inductor *** first stage utilizing a resistive current reuse and dual inductive degeneration technique is used to attain a wideband input matching and low noise figure.A common source amplifier with an inductive peaking technique as the second stage achieves high flat gain and wide -3 dB bandwidth of the overall amplifier *** implemented ultra-wideband LNA presents a maximum power gain of 15.6 dB,and a high reverse isolation of—45 dB,and good input/output return losses are better than -10 dB in the frequency range of 3.1-10.6 *** excellent noise figure（NF） of 2.8-4.7 dB was obtained in the required band with a power dissipation of 14.1 mW under a supply voltage of 1.5 *** input-referred third-order intercept point（IIP3） is -7.1 dBm at 6 *** chip area,including testing pads,is only 0.8×0.9 mm2.

关键词： CMOS low noise amplifier ultra-wideband current reuse common source noise figure

A low noise CMOS RF front-end for UWB 6-9 GHz applications

在线全文

学校读者我要写书评

暂无评论

Journal of Semiconductors 2010年第11期31卷 113-117页

作者：周锋高亭兰飞李巍李宁任俊彦 State Key Laboratory of ASIC & System Fudan University

An integrated fully differential ultra-wideband CMOS RF front-end for 6-9 GHz is presented.A resistive feedback low noise amplifier and a gain controllable IQ merged folded quadrature mixer are integrated as the RF front-end. The ESD protected chip is fabricated in a TSMC 0.13μm RF CMOS process and achieves a maximum voltage gain of 23-26 dB and a minimum voltage gain of 16-19 dB,an averaged total noise figure of 3.3-4.6 dB while operating in the high gain mode and an in-band IIP3 of-12.6 dBm while in the low gain *** RF front-end consumes 17 mA from a 1.2 V supply voltage.

关键词： CMOS ultra-wideband resistive feedback low noise amplifier folded quadrature mixer noise figure linearity

A 2.4-GHz low power dual gain low noise amplifier for ZigBee

在线全文

学校读者我要写书评

暂无评论

Journal of Semiconductors 2009年第7期30卷 109-113页

作者：高佩君闵昊 State Key Laboratory of ASIC & System Fudan University

This paper presents a fully differential dual gain low noise amplifier（DGLNA） for low power 2.45-GHz ZigBee/IEEE 802.15.4 *** effect of input parasitics on the inductively degenerated cascode LNA is *** design details within the guidelines of the analysis are *** chip was implemented in SMIC 0.18-μm 1P6M RF/mixed signal CMOS *** DGLNA achieves a maximum gain of 8 dB and a minimum gain of 1 dB with good input return *** high gain mode, the measured noise figure（NF） is 2.3-3 dB in the whole 2.45-GHz ISM *** measured 1-dB compression point, IIP3 and IIP2 is-9, 1 and 33 dBm, *** DGLNA consumes 2 mA of current from a 1.8 V power supply.

关键词： CMOS low noise amplifier input parasitics low power noise figure ZigBee IEEE 802.15.4

A full W-band low noise amplifier module for millimeter-wave applications

在线全文

学校读者我要写书评

暂无评论

Journal of Semiconductors 2015年第9期36卷 99-104页

作者：赵华姚鸿飞丁芃苏永波宁晓曦金智刘新宇 Institute of Microelectronics Chinese Academy of Sciences

A full W-band low noise amplifier （LNA） module is designed and fabricated. A broadband transition is introduced in this module. The proposed transition is designed, optimized based on the results from numerical simulations. The results show that 1 dB bandwidth of the transition ranges from 61 to 117 GHz. For the purpose of verification, two transitions in back-to-back connection are measured. The results show that transmission loss is only about 0.9-1.7 dB. This transition is used to interface integrated circuits to waveguide components. The characteristic of the LNA module is measured after assembly. It exhibits a broad bandwidth of 75 to 110 GHz, and has a small signal gain above 21 dB. The noise figure is lower than 5.2 dB throughout the entire W-band （below 3 dB from 89 to 95 GHz） at room temperature. The proposed LNA module exhibits potential for millimeter wave applications due to its high small signal gain, low noise, and low DC power consumption.

关键词： W-band: low noise amplifier (LNA) waveguide-to-microstrip probe transition noise figure LNAmodule

The design of a low-noise preamplifier for MRI

在线全文

学校读者我要写书评

暂无评论

Science China(Technological Sciences) 2011年第7期54卷 1766-1770页

作者： CAO XueMing ZU DongLin ZHAO XuNa FAN Yang GAO JiaHong Beijing Key Laboratory of Medical Physics and Engineering IHIP of Physics School Peking University Beijing 100871 China

In this paper, a low-noise preamplifier for MRI is designed and studied. A noise matching network consisting of three elements is presented. To the single-stage AsGa-FET preamplifier working at 128 MHz, the measured gain through network analyzer (HP8712C) and noise figure through noise figure analyzer (8970B) are 25 and 0.43 dB, respectively.

关键词： MRI noise figure preamplifier noise matching network gain source impedance

Design of 2.1GHz CMOS Low noise Amplifier

在线全文

学校读者我要写书评

暂无评论

The Journal of China Universities of Posts and Telecommunications 2006年第1期13卷 71-74页

作者： LI En-ling SONG Lin-hong YANG Dang-qiang XUE Ying CHU Meng Science School Xi'an University of Technology Xi'an 710048 P.R. China

This paper discusses the design of a fully differential 2.1 GHz CMOS low noise amplifier using the TSMC 0.25 μm CMOS process. Intended for use in 3G, the low noise amplifier is fully integrated and without off-chip components. The design uses an LC tank to replace a large inductor to achieve a smaller die area, and uses shielded pad capacitances to improve the noise performance. This paper also presents evaluation results of the design.

关键词： LNA LC tank noise figure shielded pads