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Large-size niobium disulfide nanoflakes down to bilayers grown by sulfurization

Nano Research 2018年第11期11卷 5978-5988页

作者： Zhen Li Wencao Yang Yaroslav Losovyj Jun Chen Enzhi Xu Haoming Liu Madilynn Werbianskyj Herbert A. Fertig Xingchen Ye Shixiong Zhang Department of Physics Indiana University Bloomington Indiana 47405 USA Department of Chemistry Indiana University Bloomington Indiana 47405 USA

Atomically thin layers of group VB transition metal dichalcogenides (TMDs) provide a unique platform for studying two-dimensional (2D) superconductivity and charge density waves. Thus far, the bottom-up synthesis of these 2D TMDs has often involved precursors that are corrosive or toxic, and their lateral sizes are typically only a few micrometers. In this paper, we report the growth of NbS2 nanoflakes with a thickness down to bilayers and a lateral dimension up to tens of micrometers without using harsh chemical species. NbS2 nanoflakes either standing or lying with respect to the sapphire substrate were obtained by sulfurization of niobium oxide films that were prepared via pulsed laser deposition. Standing nanoflakes are considered to grow epitaxially on the sapphire substrate according to their ordered orientation, while lying nanoflakes with random orientations were grown directly on top of the niobium oxide films. The Raman spectra of the 3R-phase exhibit strong dependence on the layer thickness, where the A1 mode softens as the layer number decreases. In contrast to the stable bulk NbS2, the ultra-thin nanoflakes were oxidized on their top surfaces after prolonged exposure to air, as revealed by X-ray photoelectron spectroscopy. Our work explores an important route to synthesize large-size NbS2 nanoflakes and studies the oxidation process, which is a critical factor to consider if practical applications should be realized in the future.

关键词： two-dimensional materials transition metal dichalcogenides niobium disulfide synthesis nanoflakes oxidation

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Direct laser patterning of two-dimensional lateral transition metal disulfide-oxide-disulfide heterostructures for ultrasensitive sensors

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Nano Research 2020年第8期13卷 2035-2043页

作者： Bolun Wang Hao Luo Xuewen Wang Enze Wang Yufei Sun Yu-Chien Tsai Jinxuan Dong Peng Liu Huanglong Li Yong Xu Sefaattin Tongay Kaili Jiang Shoushan Fan Kai Liu State Key Laboratory of New Ceramics and Fine Processing School of Materials Science and EngineeringTsinghua UniversityBeijing100084China Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center Tsinghua UniversityBeijing100084China State Key Laboratory of Low-Dimensional Quantum Physics Department of PhysicsTsinghua UniversityBeijing100084China Department of Precision Instrument Center for Brain Inspired Computing ResearchTsinghua UniversityBeijing100084China RIKEN Center for Emergent Matter Science(CEMS) WakoSaitama351-0198Japan School for Engineering of Matter Transport and EnergyArizona State UniversityTempeAZ85287USA

Two-dimensional(2D)heterostructures based on the combination of transition metal dichalcogenides(TMDs)and transition metal oxides(TMOs)have aroused growing attention due to their integrated merits of both components and multiple ***,nondestructive approaches of constructing TMD-TMO heterostructures are still very ***,we develop a novel type of lateral TMD-TMO heterostructure(NbS2-Nb2O5-NbS2)using a simple lithography-free,direct laser-patterning *** perfect contact of an ultrathin TMO channel(Nb2O5)with two metallic TMDs(NbS2)electrodes guarantee strong electrical signals in a two-terminal *** from sensing mechanisms in separate TMOs or TMDs,this sensor works based on the modulation of surface conduction of the ultrathin TMO(Nb2O5)channel through an adsorbed layer of water *** sensor thus exhibits high selectivity and ultrahigh sensitivity for room-temperature detection of NH3(ΔR/R=80%at 50 ppm),superior to the reported NH3 sensors based on 2D materials,and a positive temperature coefficient of resistance as high as 15%–20%/℃.Bending-invariant performance and high reliability are also demonstrated in flexible versions of *** work provides a new strategy of lithography-free processing of novel TMD-TMO heterostructures towards high-performance sensors,showing great potential in the applications of future portable and wearable electronics.

关键词： two-dimensional heterostructure niobium disulfide niobium oxide laser patterning sensor

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