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Influences of hydrogen dilution on microstructure and optical absorption characteristics of nc-SiO_x:h film

Chinese Physics B 2015年第10期24卷 547-552页

作者：赵蔚杜霖元蒋昭毅尹辰辰于威傅广生 hebei Key Laboratory of Optic-electronic Information Materials College of Physics Science and TechnologyHebei University School of Science Hebei University of Engineering

By using the plasma enhanced chemical vapor deposition（PECVD） technique, amorphous silicon oxide films containing nanocrystalline silicon grain（nc-Si O x：h） are deposited, and the bonding configurations and optical absorption properties of the films are investigated. The grain size can be well controlled by varying the hydrogen and oxygen content,and the largest size is obtained when the hydrogen dilution ratio R is 33. The results show that the crystallinity and the grain size of the film first increased and then decreased as R increased. The highest degree of crystallinity is obtained at R = *** analyses of bonding characteristics and light absorption characteristics show that the incorporation of hydrogen leads to an increase of overall bonding oxygen content in the film, and the film porosity first increases and then decreases. When R = 30, the film can be more compact, the optical absorption edge of the film is blue shifted, and the film has a lower activation energy.

关键词： nc-siox:h microstructure optical absorption

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Influence of substrate bias voltage on the microstructure of nc-SiO_x:h film

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Chinese Physics B 2015年第2期24卷 453-458页

作者：李慧敏于威徐艳梅季云蒋昭毅王新占李晓苇傅广生 hebei Key Laboratory of Optic-electronic Information Materials College of Physics Science and TechnologyHebei University

Amorphous silicon oxide containing nanocrystalline silicon grain（nc-siox：h） films are prepared by a plasmaenhanced chemical vapor deposition technique at different negative substrate bias *** influence of the bias voltage applied to the substrate on the microstructure is *** analysis of x-ray diffraction spectra evidences the in situ growth of nanocrystalline *** grain size can be well controlled by varying the substrate bias voltage,and the largest size is obtained at 60 *** transform infrared spectra studies on the microstructure evolutions of the nc-siox：h films suggest that the absorption peak intensities,which are related to the defect densities,can be well *** can be attributed to the fact that the negative bias voltage provides a useful way to change the energies of the particles in the deposition process,which can provide sufficient driving force for the diffusion and movement for the species on the growing surface and effectively passivate the dangling *** the larger grain size and lower band gap,which will result in better photosensitivity,can also be obtained with a moderate substrate bias voltage of 60 V.

关键词： nc-siox:h microstructure substrate bias voltage

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