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multilevel resistive switching and synaptic plasticity of nanoparticulated cobaltite oxide memristive device

Journal of Materials Science & Technology 2021年第19期78卷 81-91页

作者： Tukaram D.Dongale Atul C.Khot Ashkan V.Takaloo Kyung Rock Son Tae Geun Kim School of Electrical Engineering Korea University.Anam-ro 145.Seongbuk-guSeoul 02841Republic of Korea School of Nanoscience and Biotechnology Shivaji UniversityKolhapur 416004India

multilevel resistive switching(RS)is a key property to embrace the full potential of memristive devices for non-volatile memory and neuromorphic computing applications.In this study,we employed nanoparticulated cobaltite oxide(Co_(3)O_(4))as a model material to demonstrate the multilevel RS and synaptic learning capabilities because of its multiple and stable redox state properties.The Pt/Co_(3)O_(4)/Pt memristive device exhibited tunable RS properties with respect to different voltages and compliance currents(CC)without the electroforming process.That is,the device showed voltage-dependent RS at a higher CC whereas CC-dependent RS was observed at lower CC.The device showed four different resistance states during endurance and retention measurements and non-volatile memory results indicated that the CC-based measurement had less variation.Besides,we investigated the basic and complex synaptic plasticity properties using the analog current-voltage characteristics of the Pt/Co_(3)O_(4)/Pt device.In particular,we mimicked the potentiation–depression and four-spike time-dependent plasticity(STDP)rules such as asymmetric Hebbian,asymmetric anti-Hebbian,symmetric Hebbian,and symmetric antiHebbian learning rules.The results of the present work indicate that the cobaltite oxide is an excellent nanomaterial for both multilevel RS and neuromorphic computing applications.

关键词： multilevel resistive switching Synaptic plasticity STDP Cobaltite oxide Memristive device

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Thickness-dependent monochalcogenide GeSe-based CBRAM for memory and artificial electronic synapses

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Nano Research 2022年第3期15卷 2263-2277页

作者： Asif Ali Haider Abbas Muhammad Hussain Syed Hassan Abbas Jaffery Sajjad Hussain Changhwan Choi Jongwan Jung HMC(Hybrid Materials Center)and Department of Nanotechnology and Advanced Materials Engineering Sejong UniversitySeoul 143–747Republic of Korea Division of Materials Science and Engineering Hanyang UniversitySeoul 04763Republic of Korea

Investigating the promising chalcogenide materials for the development of memory and advanced neuromorphic computing applications is a critical step in realizing electronic memory and synaptic devices that can efficiently emulate biological synaptic functions.However,the assessment of monochalcogenide materials for the fabrication of highly scalable memory and electronic synaptic devices that can accurately mimic synaptic functions remain limited.In the present study,we investigated the thickness-dependent resistive switching(RS)behavior of conductive bridge random access memory(CBRAM)based on a monochalcogenide GeSe switching medium for its possible application in high-performance memory and electronic synapses.GeSe thin films of different thicknesses(6,13,24,35,47,and 56 nm)were deposited via sputtering to fabricate CBRAM devices with a stacking sequence of Ag/GeSe/Pt/Ti/SiO_(2).The devices exhibited compliance current(CC)-free and electroforming-free RS with highly stable endurance and retention characteristics with no major degradation.All devices with a thickness of 6 nm had a low-resistance state(LRS),which required an initial reset to ensure reliable switching cycles.The devices with a thickness of 47 nm and above exhibited the co-existence of unipolar resistive switching(U-RS)and bipolar resistive switching(B-RS)with the CC-controlled transition between the two switching behaviors.multilevel resistance states in the 24-nm device between a high-resistance state(HRS)and an LRS were achieved by controlling the set-CC(from 5 mA to CC-free)and the reset stop voltage(from–0.5 to–1.0 V)during the set and reset processes,respectively.The analog RS behavior of the device was further investigated with appropriate pulse measurements to emulate vital synaptic functions,including long-term potentiation(LTP),long-term depression(LTD),spike-rate-dependent plasticity(SRDP),spike-timing-dependent plasticity(STDP),paired-pulse facilitation(PPF),paired-pulse depression(PPD)and post-tetanic potentiation(PTP).Overall,the deta

关键词： conductive bridge random access memory(CBRAM) resistive memory switching monochalcogenide material bipolar and unipolar resistive switching multilevel resistive switching electronic synapses

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Flexible and degradable resistive switching memory fabricated with sodium alginate

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Chinese Physics B 2021年第4期30卷 482-486页

作者：李壮壮严梓洋许嘉琪张晓晗凡井波林亚王中强 Department of Physics Northeast Normal UniversityChangchun 130024China National Demonstration Center for Experimental Physics Education Northeast Normal UniversityChangchun 130024China

Transient electronics has attracted interest as an emerging technology to solve electronic-waste problem,due to its physically vanishing ability in solution.Here in this work,we demonstrate a flexible and degradable transient resistive switching(RS) memory device with simple structure of Cu/sodium alginate(SA)/ITO.The device presents excellent RS characteristics as well as high flexibility,including low operating voltage(multilevel RS behavior.No performance degradation occurs after bending the device 50 times.Moreover,our device can be absolutely dissolved in deionized water.The proposed SA-based transient memory device has great potential for the development of green and security memory devices.

关键词： resistive switching memory sodium alginate multilevel resistive switching transient electronics

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Bipolar tri-state resistive switching characteristics in Ti/CeO_x/Pt memory device

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Chinese Physics B 2014年第12期23卷 333-338页

作者： M.Ismail M.W.Abbas A.M.Rana I.Talib E.Ahmed M.Y.Nadeem T.L.Tsai U.Chand N.A.Shah M.Hussain A.Aziz M.T.Bhatti Department of Physics Bahauddin Zakariya University Department of Electronics Engineering and Institute of Electronics National Chiao Tung University Thin Films Technology Research Laboratory Department of Physics COMSATS Institute of Information Technology Center for High Energy Physics University of Punjab

Highly repeatable multilevel bipolar resistive switching in Ti/Ce Ox/Pt nonvolatile memory device has been demonstrated. X-ray diffraction studies of Ce O2 films reveal the formation of weak polycrystalline structure. The observed good memory performance, including stable cycling endurance and long data retention times（〉10^4s） with an acceptable resistance ratio（～10^2）, enables the device for its applications in future non-volatile resistive random access memories（RRAMs）. Based on the unique distribution characteristics of oxygen vacancies in Ce Ox films, the possible mechanism of multilevel resistive switching in Ce Ox RRAM devices has been discussed. The conduction mechanism in low resistance state is found to be Ohmic due to conductive filamentary paths, while that in the high resistance state was identified as Ohmic for low applied voltages and a space-charge-limited conduction dominated by Schottky emission at high applied voltages.

关键词： multilevel resistive switching Schottky emission cerium oxide oxygen vacancy

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