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Hydrogen passivation of multi—crystalline silicon solar cells

Chinese Physics B 2003年第1期12卷 112-115页

作者：胡志华廖显伯等 StateKeyLaboratoryforSurfacePhysics InstituteofSemiconductorsandCentreforCondensedMatterPhysicsChineseAcademyofSciencesBeijing100083China InstituteofsolarEnery YunnanNormalUn StateKeyLaboratoryfor

The effects of hydrogen passivation on multi-crystalline silicon (mc-Si) solar cells are reported in this *** plasma was generated by means of ac glow discharge in a hydrogen atmosphere. Hydrogen passivation was carried out with three different groups of mc-Si solar cells after finishing contacts. The experimental results demonstrated that the photovoltaic performances of the solar cell samples have been improved after hydrogen plasma treatment, with a relative increase in conversion efficiency up to 10.6%. A calculation modelling has been performed to interpret the experimental results using the model for analysis of microelectronic and photonic structures developed at Pennsylvania State University.

关键词： multi-crystalline silicon solar cells plasma hydrogen passivation

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Influence of atomic layer deposition Al_2O_3 nano-layer on the surface passivation of silicon solar cells

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Journal of Semiconductors 2014年第5期35卷 7-11页

作者：杨德成郎芳徐卓史金超李高非胡志岩熊景峰 Yingli Green Energy Holding Co. Ltd

A stack of Al2O3/SiNx dual layer was applied for the back side surface passivation of p-type multi-crystalline silicon solar cells, with laser-opened line metal contacts, forming a local aluminum back surface field （local Al-BSF） structure. A slight amount of Al2O3, wrapping around to the front side of the wafer during the thermal atomic layer deposition process, was found to have a negative influence on cell performance. The different process flow was found to lead to a different cell performance, because of the Al2O3 wrapping around the front surface. The best cell performance, with an absolute efficiency gain of about 0.6% compared with the normal full Al-BSF structure solar cell, was achieved when the Al2O3 layer was deposited after the front surface of the wafer had been covered by a SiNx layer. We discuss the possible reasons for this phenomenon, and propose three explanations as the Ag paste, being hindered from firing through the front passivation layer, degraded the SiNx passivation effect and the Al2O3 induced an inversion effect on the front surface. Characterization methods like internal quantum efficiency and contact resistance scanning were used to assist our understanding of the underlying mechanisms.

关键词： multi-crystalline silicon solar cells local Al-BSF Al2O3 passivation atomic layer deposition

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