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Characteristics of dual-frequency capacitively coupled SF_6/O_2 plasma and plasma texturing of multi-crystalline silicon

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Chinese Physics B 2014年第6期23卷 361-369页

作者：徐东升邹帅辛煜苏晓东王栩生 Provincial Key Laboratory of Thin Films School of Physical Science and Technology Soochow University Canadian Solar Inc.China

Due to it being environmentally friendly, much attention has been paid to the dry plasma texturing technique serving as an alternative candidate for multicrystalline silicon （mc-Si） surface texturing. In this paper, capacitively coupled plasma （CCP） driven by a dual frequency （DF） of 40.68 MHz and 13.56 MHz is first used for plasma texturing of mc-Si with SF6/O2 gas mixture. Using a hairpin resonant probe and optical emission techniques, DF-CCP characteristics and their influence on mc-silicon surface plasma texturing are investigated at different flow rate ratios, pressures, and radio-frequency （RF） input powers. Experimental results show that suitable plasma texturing of mc-silicon occurs only in a narrow range of plasma parameters, where electron density ne must be larger than 6.3 x 109 cm-3 and the spectral intensity ratio of the F atom to that of the O atom （[F]/[O]） in the plasma must be between 0.8 and 0.3. Out of this range, no cone-like structure is formed on the mc-silicon surface. In our experiments, the lowest reflectance of about 7.3% for mc-silicon surface texturing is obtained at an [F]/[O] of 0.5 and ne of 6.9 × 109 cm-3.

关键词： dual frequency capacitively coupled plasma plasma texturing multi-crystalline silicon electrondensity

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The Fabrication of Large-area Upgraded Metallurgical Grade multi-crystalline silicon Solar Cells in a Production Line

The Fabrication of Large-area Upgraded Metallurgical Grade M...

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中国材料大会2012

作者： Teng Chen Youwen Zhao Zhiyuan Dong Jun Wang Tong Liu Hui Xie Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese cademy of Sciences

ISBN: (纸本)9783037856062;3037856068

Upgraded metallurgical grade （UMG） silicon has been researched both on the purification methods and its material properties for years, indicating that it is the most promising choice as low-cost feedstock for photovoltaics. In this work, UMG multi-crystalline silicon （mc-Si） prepared by cold crucible refining and electron beam melting was investigated. Solar cells based on such silicon wafers were fabricated in a 156 x 156 mm 2 production line and their photovoltaic properties were characterized. Compared with the conventional mc-Si solar cells fabricated in the same commercial production line, the UMG mc-Si solar cells with two busbars presented higher average open circuit voltage （V oc ） and average fill factor （FF）, which were 628 mV and 78.6 % separately. Although the UMG mc-Si solar cells showed a lower shot-circuit current density （J sc ） of 32.7 A/cm 2 in the average and an early reverse breakdown voltage at around 11 V which was due to higher impurities content. The average conversion efficiency of the UMG mc-Si solar cells reached 16.14 %, and the highest conversion efficiency was up to 16.31 %. In addition, the UMG mc-Si solar cells presented relatively low light induced degradation （LID） due to the material properties. Consequently, in consideration of low cost, our UMG mc-Si solar cells substantially met the requirements of commercial manufacturing and had a great potential application for photovoltaic industry.

关键词： Metallurigical multi-crystalline silicon Solar cell.

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Effect of hydrogen annealing on characteristics of polycrystalline silicon

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Rare Metals 2006年第z1期25卷 173-175页

作者： GOU Xianfang XU Ying LI Xudong HENG Yang MA Lifen REN Bingyan Beijing Solar Energy Research Institute Beijing 100083 China Beijing Solar Energy Research Institute Beijing 100083 China Beijing Solar Energy Research Institute Beijing 100083 China Beijing Solar Energy Research Institute Beijing 100083 China Beijing Solar Energy Research Institute Beijing 100083 China Institute of Information Function Materials Hebei University of Technology Tianjin 300130 China

The characteristics of mc-Si used for solar cells during H2 ambient annealing at 800-1200 ℃ were investigated by means of FTIR and QSSPCD. The results reveal that grain boundaries or defects in mc-Si may facilitate the formation of oxygen precipitates, and the formation of oxygen precipitates has deleterious effect on the lifetime of mc-Si. Decreasing lifetime could result from the formation of new recombination during annealing. Additionally, It is found that hydrogen may facilitate the formation of oxygen precipitates in mc-Si. On the other hand, the diffusion of hydrogen may passivate the defects/boundaries and it is beneficial to the lifetime of mc-Si.

关键词： multi-crystalline silicon oxygen and carbon minority carrier lifetime annealing

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Preparation, microstructure and dislocation of solar-grade multicrystalline silicon by directional solidification from metallurgical-grade silicon

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Transactions of Nonferrous Metals Society of China 2012年第10期22卷 2548-2553页

作者：苏海军张军刘林傅恒志西北工业大学凝固技术国家重点实验室西安710072

A vacuum directional solidification with high temperature gradient was performed to prepare low cost solar-grade multicrystalline silicon （mc-Si） directly from metallurgical-grade mc-Si. The microstructure characteristic, grain size, boundary, solid-liquid growth interface, and dislocation structure under different growth conditions were studied. The results show that directionally solidified multicrystalline silicon rods with high density and orientation can be obtained when the solidification rate is below 60 μm/s. The grain size gradually decreases with increasing the solidification rate. The control of obtaining planar solid-liquid interface at high temperature gradient is effective to produce well-aligned columnar grains along the solidification direction. The growth step and twin boundaries are preferred to form in the microstructure due to the faceted growth characteristic of mc-Si. The dislocation distribution is inhomogeneous within crystals and the dislocation density increases with the increase of solidification rate. Furthermore, the crystal growth behavior and dislocation formation mechanism of mc-Si were discussed.

关键词： multi-crystalline silicon metallurgical-grade silicon silicon solar cell directional solidification microstructure

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