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Fabrication of an electro-absorption modulated distributed feedback laser by quantum well intermixing with etching ion-implantation buffer layer

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Chinese Optics Letters 2015年第8期13卷 50-53页

作者：韩良顺梁松朱洪亮王圩 Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of Science

We report the fabrication details of a monolithically integrated electro-absorption modulated distributed feedback laser （EML） based on the ion-implantation induced quantum well intermixing （QWI） technique. To well-preserve material quality in the laser region, thermal-oxide SiO2 is deposited before implantation and the ion-implantation buffer layer is etched before annealing. Thirteen pairs quantum well and barrier are employed to compensate deterioration of the modulator＇s extinction ratio （ER） caused by the QWI process. The fabricated EML exhibits an 18 dB static ER at 5 V reverse bias. The 3 dB small signal modulation band- width of modulator is over 13.5 GHz indicating that this EML is a suitable light source for over 16 Gb/s optical transmission links.

关键词： Buffer layers Distributed feedback lasers Fabrication Ion implantation Ions Light modulators Light sources Light transmission Modulators monolithic integrated circuits Semiconductor quantum wells

Multi-channel DFB laser array fabricated by SAG with optimized epitaxy conditions

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Chinese Optics Letters 2013年第4期11卷 22-25页

作者：张灿梁松马丽韩良顺朱洪亮 Key Laboratory of Semiconductors Materials Institute of Semiconductors Chinese Academy of Sciences

Selective area growth （SAG） is performed to fabricate monolithically integrated distributed feedback （DFB） laser array by adjusting the width of a SiO2 mask. A strain-compensated-barrier structure is adopted to reduce the accumulated strain and improve the quality of multi-quantum well materials. Varying the strip width of the SAG masks, the DFB laser array with an average channel spacing of 1.47 nm is demonstrated by a conventional holographic method with constant-pitch grating. The threshold current from 14 to 18 mA and over 35-dB side mode suppression ratio （SMSR） are obtained for all DFB lasers in the array.

关键词： monolithic integrated circuits

Technology challenges for monolithically integrated waveguide demultiplexers

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Chinese Optics Letters 2009年第4期7卷 315-318页

作者： Lech Wosinski Liu Liu Ning Zhu Lars Thylen Department of Microelectronics and Applied Physics Royal Institute of Technology (KTH) Electrum 229 SE-164 40 Kista Sweden Joint Research Center of Photonics of the Royal Institute of Technology and Zhejiang University INTEC Department Photonics Research Group Ghent University-IMEC St-Pietersnieuwstraat 41 9000 Ghent Belgium

A short overview of integrated waveguide demultiplexers for different applications in future highly integrated optical communication systems is presented. Some fabricated devices based on amorphous silicon nanowire te... 详细信息

关键词： Communication systems Demultiplexing monolithic integrated circuits Optical communication Waveguides

A fully differential transimpedance amplifier with integrated differential photodetector in standard CMOS process for optical communications and interconnects

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Science China(Information Sciences) 2011年第6期54卷 1300-1311页

作者： YU ChangLiang , MAO LuHong, XIAO XinDong & ZHANG ShiLin School of Electronic Information Engineering, Tianjin University, Tianjin 300072, China School of Electronic Information Engineering Tianjin University Tianjin China

A fully differential transimpedance amplifier (TIA) with integrated differential photodetector in standard CMOS technologies has been realized for optical receivers in optical communications and optical interconnects. And a novel, fully differential photodetector aiming to convert the incident light into a pair of fully differential photo-generated currents and ensure the differential symmetry on circuit configuration and model has also been proposed for the differential TIA to achieve the fully differential characteristic. Theoretical analysis and simulation results both indicate that the fully differential TIA reaches a higher bandwidth than a conventional one and at the same time a doubled sensitivity. Based on this new TIA, a monolithic, fully differential optoelectronic integrated receiver was designed and implemented in a Chartered 3.3 V, 0.35 μm standard CMOS process. It demonstrates 98.75 dB transimpedance gain, and 0.334 μA equivalent input integrated referred noise current from 1 Hz up to 3 dB frequency. The power dissipation from a single 3.3 V supply is 100 mW for the TIA-LIA (limiting amplifier)-combination plus 138 mW for the 50 output buffer. At 850 nm wavelength, the optical receiver achieves a 1.1 GHz 3 dB bandwidth, and can handle bitrates up to 1.6 Gbit/s for 12.2 dBm peak-peak optical power and 2 31 1 PRBS (pseudorandom bit sequency) input signal.

关键词： transimpedance amplifier (TIA) photodetector CMOS optical receiver monolithic integrated circuits

Development on Si optoelectronic receiving and processing chip

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Development on Si optoelectronic receiving and processing ch...