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modulation doping of p-type Cu_(12)Sb_(4)S_(13)toward improving thermoelectric performance

Journal of Materials Science & Technology 2024年第4期171卷 71-79页

作者： Khak Ho Lim Mingquan Li Yu Zhang Yue Wu Qimin Zhou Qingyue Wang Xuan Yang Pingwei Liu Wen-Jun Wang Ka Wai Wong Ka Ming Ng Yu Liu Andreu Cabot Institute of Zhejiang University-Quzhou Quzhou 324000China College of Chemical and Biological Engineering Zhejiang UniversityHangzhou 310007China School of Chemistry and Chemical Engineering Hefei University of TechnologyHefei 230009China Materials Research Institute The Pennsylvania State UniversityUniversity ParkPA 16802USA Ostia Technologies Limited United Kingdom Department of Chemical and Biological Engineering The Hong Kong University of Science and TechnologyClear Water BayHong KongChina ICREA Pg.Lluis Companys 23Barcelona 08010Spain Catalonia Energy Research Institute-IREC Sant Adria del BesosBarcelona 08930Spain

The commercial viability of thermoelectric(TE)devices relies heavily on two factors:cost reduction and efficiency *** this study,we first produce p-type Cu_(12)Sb_(4)S_(16-x)(x=0,3,4)using a low-temperature bottom-up approach and demonstrate Cu_(12)Sb_(4)S_(13)to show the best TE performance among the three tested ***,the TE energy conversion efficiency of Cu_(12)Sb_(4)S_(13)is further enhanced by optimizing its electronic band structure through the incorporation of small amounts of *** an optimal Te content of 5 mol%,more than a twofold increase in the TE figure of merit(zT)is *** gain insight into the mechanism of improvement on the transport properties of the mate-rial,we compare the interphase transport mechanism by incorporating nanodomains of different metals(Ag and Cu)into the Cu_(12)Sb_(4)S_(13)*** improved electrical conductivity obtained with Cu_(12)Sb_(4)S_(13)-Te nanocomposites is attributed to a charge flooding of the Cu_(12)Sb_(4)S_(13)*** contrast,excessive down-ward band-bending at the interphases of Ag/Cu metal-semiconductor drastically reduces the electrical ***,a weighted mobility(μw)analysis shows a dominant thermal activation of carri-ers in Cu_(12)Sb_(4)S_(13)-Te *** this material,a strong decrease in lattice thermal conductivity is also found,which is associated with a phonon-carrier scattering *** work shows the impor-tance of proper band-engineering in TE nanocomposites to decouple electrical and thermal transport to enhance TE performance,and the efficacy ofμw for electrical and thermal transport analysis.

关键词： modulation doping Thermoelectric Interphase transport Charge flooding Phonon-carrier scattering

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Experimental observation of pseudogap in a modulation-doped Mott insulator:Sn/Si(111)-(√3×√3)R30°

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Chinese Physics B 2022年第6期31卷 115-119页

作者： Yan-Ling Xiong Jia-Qi Guan Rui-Feng Wang Can-Li Song Xu-Cun Ma Qi-Kun Xue State Key Laboratory of Low-Dimensional Quantum Physics Department of PhysicsTsinghua UniversityBeijing 100084China Frontier Science Center for Quantum Information Beijing 100084China Beijing Academy of Quantum Information Sciences Beijing 100193China Southern University of Science and Technology Shenzhen 518055China

Unusual quantum phenomena usually emerge upon doping Mott *** a molecular beam epitaxy system integrated with cryogenic sc√annin√g tunneling microscope,we investigate the electronic structure of a modulation-doped Mott insulator Sn/Si(111)-(√3×√3)R30°.In underdoped regions,we observe a universal pseudogap opening around the Fermi level,which changes little with the applied magnetic field and the occurrence of Sn *** pseudogap gets smeared out at elevated temperatures and alters in size with the spatial confinement of the Mott insulating *** findings,along with the previously observed superconductivity at a higher doping level,are highly reminiscent of the electronic phase diagram in the doped copper oxide compounds.

关键词： pseudogap(PG) modulation doping Mott insulator scanning tunneling microscope(STM)

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Highly efficient silicon light emitting diodes produced by doping engineering

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Frontiers of Optoelectronics 2012年第1期5卷 7-12页

作者： Jiaming SUN M.HELM W.SKORUPA B.SCHMIDT A.MVCKLICH Key Laboratory of Weak Light Nonlinear Photonics Ministry of Education Nankai UniversityTianjin 300071China Institute of Ion Beam Physics and Materials Research Helmholtz-Zentrum Dresden-RossendorfDresden 01314Germany

This paper reviews our recent progress on silicon （Si） pn junction light emitting diodes with locally doping engineered carrier potentials. Boron implanted Si diodes with dislocation loops have electroluminescence （EL） quantum efficiency up to 0.12%, which is two orders of magnitude higher than those without dislocations. Boron gettering along the strained dislocation lines produces locally p-type spike doping at the dislocations, which have potential wells for bounding spatially indirect excitons. Thermal dissociation of the bound excitons releases free carriers, leading to an anomalous increase of the band to band luminescence with increasing tempera- ture. Si light emitting diodes with external quantum efficiency of 0.2% have been also demonstrated by implementation of pnpn modulation doping arrays.

关键词： silicon (Si) light emitting diodes dopingengineering dislocation modulation doping

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Nodeless pairing in superconducting copper-oxide monolayer films on BieSreCaCueO8＋δ

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Science Bulletin 2016年第16期61卷 1239-1247页

作者： Yong Zhong Yang Wang Sha Han Yan-Feng Lv Wen-Lin Wang Ding Zhang Hao Ding Yi-Min Zhang Lili Wang Ke He Ruidan Zhong John A. Schneeloch Gen-Da Gu Can-Li Song Xu-Cun Ma Qi-Kun Xue State Key Laboratory of Low-Dimensional Quantum Physics Department of Physics Tsinghua University Beijing 100084China Collaborative Innovation Center of Quantum Matter Beijing 100084 China Condensed Matter Physics and Materials Science Department Brookhaven National Laboratory Upton NY 11973 USA Department of Physics and Astronomy Stony Brook UniversityStony Brook NY 11794 USA

The pairing mechanism of high-temperature superconductivity in cuprates remains the biggest unresolved mystery in condensed matter physics. To solve the problem, one of the most effective approaches is to investigate directly the superconducting CuO2 layers. Here, by growing CuO2 monolayer films on Bi2Sr2CaCu2O8＋δ substrates, we identify two distinct and spatially separated energy gaps centered at the Fermi energy, a smaller U-like gap and a larger V-like gap on the films, and study their interactions with alien atoms by low-temperature scanning tunneling microscopy. The newly discovered U-like gap exhibits strong phase coherence and is immune to scattering by K, Cs and Ag atoms, suggesting its nature as a nodeless superconducting gap in the CuO2 layers, whereas the V-like gap agrees with the well-known pseudogap state in the underdoped regime. Our results support an s-wave superconductivity in Bi2Sr2CaCu2O8＋δ, which, we pro- pose, originates from the modulation-doping resultant twodimensional hole liquid confined in the CuO2 layers.

关键词： Copper oxides Molecular beam epitaxy Nodeless pairing modulation doping

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