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Understanding the failure mechanisms of microwave bipolar transistors caused by electrostatic discharge

Journal of Semiconductors 2011年第10期32卷 44-48页

作者：刘进陈永光谭志良杨洁张希军王振兴 Institute of Electrostatic and Electromagnetic Protection Ordnance Engineering College

Electrostatic discharge（ESD） phenomena involve both electrical and thermal effects,and a direct electrostatic discharge to an electronic device is one of the most severe threats to component ***, the electrical and thermal stability of multifinger microwave bipolar transistors（bjts） under ESD conditions has been investigated theoretically and experimentally.100 samples have been tested for multiple pulses until a failure ***,the distributions of electric field,current density and lattice temperature have also been analyzed by use of the two-dimensional device simulation tool *** is a good agreement between the simulated results and failure *** the case of a thermal couple,the avalanche current distribution in the fingers is in general spatially unstable and results in the formation of current crowding effects and crystal *** experimental results indicate that a collector-base junction is more sensitive to ESD than an emitter-base junction based on the special device *** the ESD level increased to 1.3 kV,the collector-base junction has been burnt out *** analysis has also demonstrated that ESD failures occur generally by upsetting the breakdown voltage of the dielectric or overheating of the aluminum-silicon *** addition,fatigue phenomena are observed during ESD testing,with devices that still function after repeated low-intensity ESDs but whose performances have been severely degraded.

关键词： microwave bjt ESD failure mechanism accumulation effect

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