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microstructures of SrBi2Ta2O9 materials investigated by tem

Microstructures of SrBi2Ta2O9 materials investigated by TEM

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CCAST“先进高分辨电子显微学—理论和应用”研讨会

作者： Xinhua Zhu, Jianmin Zhu, Shunhua Zhou, Qi Li, Zhiguo Liu, Naiben Ming National Laboratory of Solid State microstructures, Department of Physics Nanjing University, Nanjing 210093

＜正＞ The microstructures of SrBi2Ta2O9 （SBT） materials including （001 ）-oriented single crystal and thin films with （001）-orientation, were investigated by transmission electron microscopy （tem）. The 90°domain walls in SBT single crystal were identified by the 90°rotation relationship of the electron diffraction pattern about the [001] zone axis. They exhibit irregular configurations. The structural planar defects of anti-phase boundaries （APBs） in the SBT single crystal were also observed, which exhibit ribbon-like morphologies. Four-fold vertices formed by four APBs meeting together are observed as predominant singularities, and are explained by a four-state spin clock model. Some three-fold venices are also observed since both threefold and fourfold vertices are energetically allowed in the present model. Dissociation of grain boundary dislocations （GBDs） in the SBT thin films with （001）-orientation was also examined. Small-angle （8.2°） [001] tilt grain boundaries with a boundary plane close to the （110） plane exhibit partial GBDs separated by stacking faults. The energy of the stacking fault is evaluated to be 0.27-0.29 J/m2. The dissociated grain-boundary structures have twice the number of GBDs and interdislocation core channel width smaller than that Frank’s geometrical rule predicts. The edge dislocations at small-angle tilt grain boundary are deleterious to the leakage current of SBT films since the edge dislocation cores can provide pinning centers for the space charges in SBT films, resulting in high leakage current and poor fatigue-resistance characteristics.

关键词： SBT materials microstructures: tem

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