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Vertical,capacitive microelectromechanical switches produced via direct writing of copper wires

Microsystems & Nanoengineering 2016年第1期2卷 249-255页

作者： Zhiran Yi Jianjun Guo Yining Chen Haiqing Zhang Shuai Zhang Gaojie Xu Minfeng Yu Ping Cui Zhejiang Key Laboratory of Additive Manufacturing Materials Ningbo Institute of Materials Technology and EngineeringChinese Academy of SciencesNingbo 315201China D.Guggenheim School of Aerospace Engineering Georgia Institute of TechnologyAtlantaGA 30332USA Nano Science and Technology Institute University of Science and Technology of ChinaSuzhou 215123China

Three-dimensional(3D)direct writing based on the meniscus-confined electrodeposition of copper metal wires was used in this study to develop vertical capacitive microelectromechanical *** microelectromechanical switches reduce the form factor and increase the area density of such devices in integrated *** studied the electromechanical characteristics of such vertical switches by exploring the dependence of switching voltage on various device structures,particularly with regard to the length,wire diameter,and the distance between the two wires.A simple model was found to match the experimental measurements made in this *** found that the electrodeposited copper microwires exhibit a good elastic modulus close to that of bulk *** optimizing the 3D structure of the electrodes,a volatile electromechanical switch with a sub-5 V switching voltage was demonstrated in a vertical microscale switch with a gap distance as small as 100 nm created with a pair of copper wires with diameters of~1μm and heights of 25μ*** study establishes an innovative approach to construct microelectromechanical systems with arbitrary 3D microwire structures for various applications,including the demonstrated volatile and nonvolatile microswitches.

关键词： microelectromechanical switch direct writing copper microwire

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