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检索条件"主题词=microchip laser"
6 条 记 录,以下是1-10 订阅
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Highly Er^(3+)/Yb^(3+) Co-Doped Fluoroaluminate Glasses for microchip laser at 1.54 μm
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Journal of Rare Earths 2004年 第4期22卷 447-451页
作者: 张军杰 戴世勋 徐时清 汪国年 张丽艳 胡丽丽 Shanghai Institute of Optics and Fine Mechanics Chinese Academy of Science Shanghai 201800 China
A series of highly Er^(3+)/Yb^(3+) co-doped fluoroaluminate glasses were investigated in order to develop a microchip laser at 1.54 μm under 980 nm excitation. Measurements of absorption, emission and up-conversion s... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
External-cavity birefringence feedback effects of microchip Nd:YAG laser and its application in angle measurement
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Chinese Physics B 2009年 第8期18卷 3438-3443页
作者: 任成 谈宜东 张书练 State Key Laboratory of Precision Measurement Technology and Instruments Department of Precision Instruments & MechanologyTsinghua University
External-cavity birefringence feedback effects of the microchip Nd:YAG laser are presented. When a birefringence element is placed in the external feedback cavity of the laser, two orthogonally polarized laser beams ... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Diode-Pumped Passive Q-Switched 946 nm Nd:YAG laser with a GaAs Saturable Absorber
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Chinese Physics Letters 2006年 第3期23卷 619-621页
作者: 王素梅 张秋琳 张玲 张春雨 张东香 冯宝华 张治国 Laboratory of Optical Physics Institute of Physics~ Chinese Academy of Sciences PO Box 603 Beijing 100080 Physics and Technology College Hebei University Baoding 071002
We report, for the first time to our knowledge, a diode-pumped passive Q-switched 946nm Nd:YAG laser by using a GaAs as saturable absorber. The maximum average output power is 1.24 W at an incident pump power of 15 W... 详细信息
来源: 维普期刊数据库 维普期刊数据库 评论
LD pumped Nd: YAG microchip lasers
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Chinese Journal of lasers 1993年 第4期 3-8页
作者: Zhenguo Shan, Xiaohua Shen, Zuliang Fu, Guosong Huang,Yuzheng Tu, Su Yin, Liqing Shen, Fuzheng Zhou(Shanghai Institute of Optics & Fine Mechanics(SIOM) ,Academia Sinica,P.O.Box 800 - 216,Shanghai 201800,China)
A new experimental result obtained for the first time about LD pumped Nd: YAG microchip lasers in China is presented. The output power reached 62.5mW, when the input power was 340mW. The optical efficiency was 18%. Th... 详细信息
来源: 同方期刊数据库 同方期刊数据库 评论
DIODER-PUMPED SELF-Q-SWITCHED Cr4+,Nd3+:YAG laser WITH AMPLIFIER
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Journal of Zhejiang University-Science A(Applied Physics & Engineering) 2001年 第4期 2-6页
作者: 陈军 朱琦
This paper reports results of study on self-Q-switched Cr\+\{4+\},Nd\+\{3+\}:YAG microchip lasers at \{1.064\} μm using a quasi-monolithic setup. Pulses with 6 to 60 ns wide (FWHM) and TEM00 mode produced under cw pu... 详细信息
来源: 同方期刊数据库 同方期刊数据库 评论
Passively Q-switched Nd:GdVO4 laser based on carbon-doped boron nitride
Passively Q-switched Nd:GdVO4 laser based on carbon-doped bo...
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强激光材料与元器件学术研讨会暨激光破坏学术研讨会
作者: 王丽娟 Ma Fukun Wang Zhengping Xu Xinguang State Key Laboratory of Crystal Materials Shandong University
With carbon-doped boron nitride nanosheets(C-BNns) as saturable absorber(SA),passively Q-switched laser performance of Nd:GdV04 microchip laser was demonstrated for the first *** maximum continuous-wave output power w... 详细信息
来源: cnki会议 评论