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Simulation of GaN micro-structured neutron detectors for improving electrical properties

Chinese Physics B 2020年第2期29卷 414-419页

作者： Xin-Lei Geng Xiao-Chuan Xia Huo-Lin Huang Zhong-Hao Sun He-Qiu Zhang Xing-Zhu Cui Xiao-Hua Liang Hong-Wei Liang School of microelectronics Dalian University of TechnologyDalian 116024China School of Optoelectronic Engineering and Instrumentation Science Dalian University of TechnologyDalian 116024China Institute of High Energy Physics Chinese Academy of Sciences(CAS)Beijing 100049China

Nowadays,the superior detection performance of semiconductor neutron detectors is a challenging *** this paper,we deal with a novel GaN micro-structured neutron detector(GaN-MSND)and compare three different methods such as the method of modulating the trench depth,the method of introducing dielectric layer and p-type inversion region to improve the width of depletion region(W).It is observed that the intensity of electric field can be modulated by scaling the trench *** the other hand,the electron blocking region is formed in the detector enveloped with a dielectric ***,the introducing of p-type inversion region produces new p/n junction,which not only promotes the further expansion of the depletion region but also reduces the intensity of electric field produced by main *** can be realized that all these methods can considerably enhance the working voltage as well as *** them,the improvement on W of GaN-MSND with the p-type inversion region is the most significant and the value of W could reach 12.8μm when the carrier concentration of p-type inversion region is 10^17 cm^-***,the value of W is observed to improve 200%for the designed GaN-MSND as compared with that without additional *** work ensures to the researchers and scientific community the fabrication of GaN-MSND having superior detection limit in the field of intense radiation.

关键词： GaN micro-structured neutron detector depletion region electric field

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