检索结果-南通市图书馆

Atomically precise metal chalcogenide supertetrahedral clusters:frameworks to molecules,and structure to function

National Science Review 2022年第1期9卷 128-143页

作者： Jiaxu Zhang Pingyun Feng Xianhui Bu Tao Wu College of Chemistry Chemical Engineering and Material Science Soochow University Department of Chemistry University of California College of Chemistry and Materials Science Guangdong Provincial Key Laboratory of Functional Supramolecular Coordination Materials and Applications Jinan University Department of Chemistry and Biochemistry California State University

metal chalcogenide supertetrahedral clusters(MCSCs) are of significance for developing crystalline porous framework materials and atomically precise cluster chemistry.Early research interest focused on the synthetic and structural chemistry of MCSC-based porous semiconductor materials with different cluster sizes/compositions and their applications in adsorption-based separation and optoelectronics.More recently,focus has shifted to the cluster chemistry of MCSCs to establish atomically precise structure-composition-property relationships,which are critical for regulating the properties and expanding the applications of MCSCs.Importantly,MCSCs are similar to Ⅱ-Ⅵ or Ⅰ-Ⅲ-Ⅵ semiconductor nanocrystals(also called quantum dots,QDs) but avoid their inherent size polydispersity and structural ambiguity.Thus,discrete MCSCs,especially those that are solution-processable,could provide models for understanding various issues that cannot be easily clarified using QDs.This review covers three decades of efforts on MCSCs,including advancements in MCSC-based open frameworks(reticular chemistry),the precise structure-property relationships of MCSCs(cluster chemistry),and the functionalization and applications of MCSC-based micro crystals.An outlook on remaining problems to be solved and future trends is also presented.

关键词： metal chalcogenide nanocluster open framework semiconductor reticular chemistry atomically precise nanochemistry

来源：

同方期刊数据库评论

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Recent Progress in Developing Crystalline Ion Exchange Materials for the Removal of Radioactive Ions

引用

Chinese Journal of Structural Chemistry 2020年第12期39卷 2157-2171,2056页

作者：唐俊豪孙海燕马文冯美玲黄小荥 State Key Laboratory of Structural Chemistry Fujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhou 350002China University of Chinese Academy of Sciences Beijing 100049China

The nuclear fuel cycle inevitably generates a large amount of radioactive waste liquid,which will pose a serious threat to the ecological environment and human health.Ion exchange method has received wide attention for its easy operation,low cost and no secondary pollution.However,the effective removal of radioactive ions from complex solutions still remains a serious challenge due to their environmental mobility and radiotoxicity.We have developed an efficient strategy to construct crystalline ion-exchange materials by inducing layered or three-dimensional microporous anionic frameworks by organic cations that can be effectively exchanged by radioactive metal ions.This type of materials can be applied effectively to the removal of radioactive ions from complex solutions and the removal mechanism has been deeply clarified by means of single crystal structure analyses,theoretical calculations,etc.This review summarizes our recent progress in the study of synthesis,structures and properties of radioactive ion removals for such type of crystalline ion-exchange materials.

关键词： ion exchange crystalline materials metal chalcogenide vanadate MOF organic amine radionuclide remediation

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Design and Exploratory Synthesis of Infrared Nonlinear Optical metal chalcogenides: Recent Advances and Future Perspectives

引用

Chinese Journal of Structural Chemistry 2020年第9期39卷 1559-1563,1553页

作者：李壮姚吉勇吴以成 Beijing Center for Crystal Research and Development Key Lab of Functional Crystals and Laser TechnologyTechnical Institute of Physics and ChemistryChinese Academy of SciencesBeijing 100190China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Institute of Functional Crystal Materials Tianjin University of TechnologyTianjin 300384China

Design and exploratory synthesis of novel infrared nonlinear optical chalcogenides have drawn extensive concerns owing to their excellent overall performance and important role in laser industry.During the past decades,a large number of infrared nonlinear optical chalcogenides have been developed and many effective design strategies have been summarized,which illuminates the path of future explorations.In this perspective,we discuss the feasibility and effectiveness of the representative design ideas.Moreover,we point out some topics to be investigated and discuss the future research directions.

关键词： metal chalcogenide design exploratory synthesis nonlinear optical

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

High-performance Top-gated Monolayer SnS2 Field-effect Transistors and Their Integrated Logic Circuits

High-performance Top-gated Monolayer SnS2 Field-effect Trans...

引用

第一届新型太阳能电池暨钙钛矿太阳能电池学术研讨会

作者： H.S.Song J.Tang Y.B.Cheng K.Tsukagoshi Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information Huazhong University of Science and Technology (HUST) International Center for Materials Nanoarchitectonics (WPI-MANA) National Institute for Materials Science (NIMS)

Two dimensional(2D) layered semiconductors are very promising for post-silicon ultrathin channels and flexible electronics due to the remarkable dimensional and mechanical properties. Besides molybdenum disulfide(MoS), the first recognized 2D semiconductor, it is also important to explore the wide spectrum of layered metal chalcogenides(LMCs) family and to identify possible compounds with high performance. Here we report the fabrication of high-performance top-gated field-effect transistors(FETs) and related logic gates from monolayer tin disulfide(SnS), a type of non-transition metal dichalcogenide. The measured carrier mobility of our monolayer devices reaches 50 cm/Vs, largely higher than that of the back-gated counterparts( cm/Vs). Based on a direct-coupled FET logic technique, advanced Boolean logic gates and operations are also implemented, with the voltage gain of 3.5 and output swing of >90% for the NOT and NOR gates, respectively. The superior electrical and integration properties make monolayer SnS a strong candidate for next-generation atomic electronics.

关键词： metal chalcogenide Monolayer Tin disulfide Field-effect transistor Integrated circuits

来源： cnki会议评论

在线全文

cnki会议

学校读者我要写书评

暂无评论

欢迎您,

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

在线全文

请选择保存的检索档案：

请选择收藏分类：

通借通还

欢迎您,

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

在线全文

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：