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GaN/metal/Si heterostructure fabricated by metal bonding and laser lift-off

Journal of Semiconductors 2009年第12期30卷 5-8页

作者：张小英阮育娇陈松岩李成 Department of Mathematics and Physics Xiamen University of Technology Department of Physics Semiconductor Photonics Research CenterXiamen University

A process methodology has been adopted to transfer GaN thin films grown on sapphire substrates to Si substrates using metal bonding and laser lift-off techniques. After bonding, a single KrF （248 nm） excimer laser pulse was directed through the transparent sapphire substrates followed by low-temperature heat treatment to remove the substrates. The influence of bonding temperature and energy density of the excimer laser on the structure and optical properties of GaN films were investigated systemically. Atomic force microscopy, X-ray diffraction and photoluminescence measurements showed that （1） the quality of the GaN film was higher at a lower bonding temperature and lower energy density; （2） the threshold of the energy density of the excimer laser lift-off GaN was 300 mJ/cm^2. The root-mean-square roughness of the transferred GaN surface was about 50 nm at a bonding temperature of 400 ℃.

关键词： GaN films silicon metal bonding laser lift-off atomic force microscopy X-ray diffraction

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Improved light extraction of wafer-bonded AlGalnP LEDs by surface roughening

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Journal of Semiconductors 2010年第11期31卷 52-54页

作者：刘自可高伟徐晨邹德恕秦园郭靖沈光池 Key Laboratory of Opto-Electronics Technology Ministry of EducationBeijing University of Technology

By using the wafer bonding technique and wet etching process,a wafer bonded thin film AlGaInP LED with wet etched n-AlGaInP surfaces was fabricated.The morphology of the etched surface exhibits a pyramid-like feature.The wafer was cut into 270×270μm2 chips and then packaged into TO-18 without epoxy resin.With 20-mA current injection,the light intensity and output power of LED-Ⅰwith surface roughening respectively reach 315 mcd and 4.622 mW,which was 1.7 times higher than that of LED-Ⅱwithout surface roughening.The enhancement of output power in LED-Ⅰcan be attributed to the pyramid-like surface,which not only reduces the total internal reflection at the semiconductor-air interface but also effectively guides more photons into the escape angle for emission from the LED device.

关键词： AlGalnP light-emitting diodes metal bonding surface roughening

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