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Atomic origin of the traps in memristive interface

Nano Research 2017年第6期10卷 1924-1931页

作者： Ye Tian Lida Pan Chuan Fei Guo Qian Liu CAS Center of Excellence for Nanoscience CAS Key Laboratory of Nanosystem and Hierarchical Fabrication National Center for Nanoscience and Technology No. 11 Beiyitiao Zhongguancun Beijing 100190 China School of Communication and Electronics Engineering Hunan City University Yiyang 413000 China Department of Physics and Astronomy Vanderbilt University Nashville TN 37235 USA Institute of Physics Chinese Academy of Sciences Beijing 100190 China Photonics Research Group Department of Information Technology Ghent University-IMEC Ghent B-9000 Belgium Department of Materials Science and Engineering South University of Science and Technology of China Shenzhen 518055 China

In recent years, trap-related interfacial transport phenomena have received great attention owing to their potential applications in resistive switching devices and photo detectors. Not long ago, one new type of memristive interface that is composed of F-doped SnO2 and Bi2S3 nano-network layers has demonstrated a bivariate-continuous-tunable resistance with a swift response comparable to the one in neuron synapses and with a brain-like memorizing capability. However, the resistive mechanism is still not clearly understood because of lack of evidence, and the limited improvement in the development of the interfacial device. By combining I-V characterization, electron energy-loss spectroscopy, and first- principle calculation, we studied in detail the macro/micro features of the memristive interface using experimental and theoretical methods, and confirmed that its atomic origin is attributed to the traps induced by O-doping. This implies that impurity-doping might be an effective strategy for improving switching features and building new interfacial memristors.

关键词： memristance interface trap state first principle calculation

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