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Resonant enhancement of magnetic damping driven by coherent acoustic phonons in thin Co_(2)FeAl film epitaxied on GaAs

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Journal of Semiconductors 2021年第3期42卷 66-72页

作者： Lin Song Wei Yan Hailong Wang Jianhua Zhao Xinhui Zhang State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Laser Institute Qilu University of Technology(Shandong Academy of Sciences)Qingdao 266000China

The magnetic dynamics of a thin Co_(2)FeAl film epitaxially grown on GaAs substrate was investigated using the timeresolved magneto-optical Kerr measurement under an out-of-plane external *** intrinsic magnetic damping constant,which should do not vary with the external magnetic field,exhibits an abnormal huge increase when the precession frequency is tuned to be resonant with that of the coherent longitudinal acoustic phonon in the Co_(2)FeAl/GaAs *** experimental finding is suggested to result from the strong coherent energy transfer from spins to acoustic phonons via magnetoelastic effect under a resonant coupling condition,which leads to a huge energy dissipation of spins and a greatly enhanced magnetic damping in Co_(2)*** experimental findings provide an experimental evidence of spin pumping-like effect driven by propagating acoustic phonons via magnetoelastic effect,suggesting an alternative approach to the possible long-range spin manipulation via coherent acoustic waves.

关键词： magnetic damping coherent longitudinal acoustic phonons magnetoelastic effect long-range spin manipulation

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Out-of-Plane Magnetic Anisotropy and Microwave Permeability of magnetoelastic FeCoSiB Amorphous Thin Films

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Journal of Electronic Science and Technology of China 2007年第3期5卷 226-229页

作者： Fu-Qiang Xiao Man-Gui Han Hai-Peng Lu Li Zhang En Li Long-Jiang Deng Deng ate with the Center of Electromagnetic Wave Absorbing Materials Ministry of Education Chengdu 610054 China the State Key Laboratory of Elect ohio Thin Films ＆ Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 China with the Center of Electromagnetic Wave Absorbing Materials Ministry of Education Chengdu 610054 China the School of Electronics Engineering. University of Electronic Science and Technology of China Chengdu 610054 China.

Theamorphous magnetoelastic Fe66Co17Si1B6 thin films have been deposited by dc magnetron sputtering. A lot of ＂nano-trenches＂ have been observed on the fdm surfaces by AFM. The permeability of amorphous Fe66COlTSilB6 thin films was measured within the frequency range of 0.6GHz-10.2 GHz. The ferromagnetic resonance frequency was found to be 1.2 GHz. MFM shows that the domain of thin film is a maze-type pattern, which indicates that an out-of-plane magnetic anisotropy exists. The out-of-plane anisotropy is believed due to the stress-induced magnetic anisotropy. It can be inferred that the internal stress is tensile stress and normal to the film plane. Index Terms

关键词： Amorphous thin film magnetoelastic effect microwave permeability.

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