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Current-Induced magnetic switching in an L1_(0) FePt Single Layer with Large Perpendicular Anisotropy Through Spin–Orbit Torque

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Engineering 2022年第5期8卷 55-61页

作者： Kaifeng Dong Chao Sun Laizhe Zhu Yiyi Jiao Ying Tao Xin Hu Ruofan Li Shuai Zhang Zhe Guo Shijiang Luo Xiaofei Yang Shaoping Li Long You School of Automation China University of GeosciencesWuhan 430074China Hubei Key Laboratory of Advanced Control and Intelligent Automation for Complex Systems China University of GeosciencesWuhan 430074China School of Optical and Electronic Information Huazhong University of Science and TechnologyWuhan 430074China China Resources Microelectronics Limited Shanghai 200072China Shenzhen Huazhong University of Science and Technology Research Institute Shenzhen 518000China Wuhan National High magnetic Field Center Huazhong University of Science and TechnologyWuhan 430074China

In this study,current-induced partial magnetization-based switching was realized through the spin–orbit torque(SOT)in single-layer L1_(0) FePt with a perpendicular anisotropy(K_(u⊥))of 1.19×10^(7) erg·cm^(-3)(1 erg·cm^(-3)=0.1 J·m^(-3)),and its corresponding SOT efficiency(βDL)was 8×10^(-6) Oe·(A·cm^(-2))^(-1)(1 Oe=79.57747 A·m^(-1)),which is several times higher than that of the traditional Ta/CoFeB/MgO structure reported in past work.The SOT in the FePt films originated from the structural inversion asymmetry in the FePt films since the dislocations and defects were inhomogeneously distributed within the samples.Furthermore,the FePt grown on MgO with a granular structure had a larger effective SOT field and effi-ciency than that grown on SrTiO_(3)(STO)with a continuous structure.The SOT efficiency was found to be considerably dependent on not only the sputtering temperature-induced chemical ordering but also the lattice mismatch-induced evolution of the microstructure.Our findings can provide a useful means of efficiently electrically controlling a magnetic bit that is highly thermally stable via SOT.

关键词： L1_(0)FePt SOT Inversion asymmetry magnetic switching Perpendicular anisotropy

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Thermal control magnetic switching dominated by spin reorientation transition in Mn-doped PrFeO_(3) single crystals

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Frontiers of physics 2022年第3期17卷 35-41页

作者： Wencheng Fan Haiyang Chen Gang Zhao Xiaoxuan Ma Ramki Chakaravarthy Baojuan Kang Wenlai Lu Wei Ren Jincang Zhang Shixun Cao Materials Genome Institute Department of Physics and International Center for Quantum and Molecular StructuresShanghai UniversityShanghai 200444China Shanghai Key Laboratory of High Temperature Superconductors Shanghai UniversityShanghai 200444China

Spin reorientation transition (SRT) has attracted substantial attention due to its important role in the ultrafast control of spins. However, the transition temperature is usually too low for its practical applications. Here, we demonstrate the ability to modulate the SRT temperature in PrFe_(1−x)Mn_(x)O_(3) single crystals from 196 K to 317 K across the room temperature by varying the Mn concentration. Interestingly, the Γ_(4) to Γ_(1) spin reorientation of the Mn-doped PrFeO_(3) is distinct from the Γ_(4) to Γ_(2) spin reorientation transition as in the parent material. Because of the coupling between rare-earth ions and transition-metal ions in determining the SRT temperature, the demonstrated control scheme of spin reorientation transition temperature by Mn-doping is expected to be used in temperature control magnetic switching devices and applicable to many other rare-earth orthoferrites.

关键词： magnetic switching spin reorientation transition perovskite oxides

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A trinuclear {Fe_(2)^(Ⅲ)Fe^(Ⅱ)} complex involving both spin and non-spin transitions exhibits three-step and wide thermal hysteresis

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Science China Chemistry 2022年第3期65卷 532-538页

作者： Xin-Hua Zhao Dong Shao Jia-Tao Chen De-Xuan Gan Jiong Yang Yuan-Zhu Zhang Department of Chemistry Southern University of Science and Technology(SUSTech)Shenzhen 518055China

The engineering of switchable molecules with magnetic multistability is lying on the cutting-edge research topics for integrating multi-switches and ternary memory devices. Here we presented a cyanide-bridged {Fe_(2)^(Ⅲ)Fe^(Ⅱ)} desolvated complex {[(pzTp)Fe^(Ⅲ)-(CN)3]2[Fe^(Ⅱ)(L)]} (1), obtained through single-crystal-to-single-crystal (SCSC) transformation from its solvated phase {[(pzTp)-Fe^(Ⅲ)(CN)3]2[Fe^(Ⅱ)(L)]}·2CH_(3)OH·5H_(2)O (1·sol). Remarkably, 1 exhibited unprecedented three-step transition in magnetization with wide thermal hysteresis (44, 40, and 36 K) in the temperature range of 80–320 K. The detailed studies demonstrated that the tristable character originates from both an order-disorder structural phase transition (SPT) and a strongly cooperative two-step spin crossover (SCO) process. This work thus provides a new promising strategy for realizing multiple bistablity in magnetization by introducing two different transitions.

关键词： magnetic multistability cyanide complex spin crossover phase transition magnetic switching

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Voltage control of magnetization switching and dynamics

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Chinese Physics B 2018年第6期27卷 443-447页

作者：文宏玉夏建白 The State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of Sciences

The voltage controlled magnetic switching effect is verified experimentally. The Landau–Lifshitz–Gilbert（LLG）equation is used to study the voltage controlled magnetic switching. It is found that the initial values of magnetic moment components are critical for the switching effect, which should satisfy a definite condition. The external magnetic field which affects only the oscillation period should be comparable to the internal magnetic field. If the external magnetic field is too small, the switching effect will disappear. The precessions of mx and my are the best for the tilt angle of the external magnetic field θt = 0？, i.e., the field is perpendicular to the sample plane.

关键词： magnetic switching voltage control spin transfer torque Landau-Lifshitz-Gilbert （LLG） equa- tion

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A Molecular Crystal Shows Multiple Correlated magnetic and Ferroelectric switchings

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CCS Chemistry 2021年第9期3卷 2464-2472页

作者： Yun Li Shu-Qi Wu Jin-Peng Xue Xiao-Lei Wang Osamu Sato Zi-Shuo Yao Jun Tao Key Laboratory of Cluster Science of Ministry of Education School of Chemistry and Chemical EngineeringBeijing Institute of TechnologyBeijing 100081 Institute for Materials Chemistry and Engineering Kyushu UniversityFukuoka 819-0395

Simultaneous control of the magnetic and electric properties of materials is crucial for their application in next-generation memory and sensor devices.Herein,we report a single-crystal Co(II)complex that exhibits unprecedented two-step magnetic switching accompanied by paraelectric–ferroelectric–paraelectric phase transition.The ferroelectricity of the material is governed by changes in the directionality of the sulfate dianions therein that trigger nonpolar–polar–nonpolar variation of the crystal symmetry and induce slight structural changes in the Co(II)complex.

关键词： molecular ferroelectric magnetic switching phase transition symmetry breaking Co(II)

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