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magnetic proximity effect induced spin splitting in two-dimensional antimonene/Fe_(3)GeTe_(2) van der Waals heterostructures

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Chinese Physics B 2022年第3期31卷 488-496页

作者： Xiuya Su Helin Qin Zhongbo Yan Dingyong Zhong Donghui Guo School of Physics Sun Yat-sen University Guangzhou 510275China State Key Laboratory of Optoelectronic Materials and Technologies Sun Yat-sen University Guangzhou 510275China

Recently, two-dimensional van der Waals(vd W) magnetic heterostructures have attracted intensive attention since they can show remarkable properties due to the magnetic proximity effect. In this work, the spin-polarized electronic structures of antimonene/Fe_(3)GeTe_(2)vdW heterostructures were investigated through the first-principles calculations. Owing to the magnetic proximity effect, the spin splitting appears at the conduction-band minimum(CBM) and the valence-band maximum(VBM) of the antimonene. A low-energy effective Hamiltonian was proposed to depict the spin splitting. It was found that the spin splitting can be modulated by means of applying an external electric field, changing interlayer distance or changing stacking configuration. The spin splitting energy at the CBM monotonously increases as the external electric field changes from-5 V/nm to 5 V/nm, while the spin splitting energy at the VBM almost remains the same. Meanwhile,as the interlayer distance increases, the spin splitting energies at the CBM and VBM both decrease. The different stacking configurations can also induce different spin splitting energies at the CBM and VBM. Our work demonstrates that the spin splitting of antimonene in this heterostructure is not singly dependent on the nearest Sb–Fe distance, which indicates that magnetic proximity effect in heterostructures may be modulated by multiple factors, such as hybridization of electronic states and the local electronic environment. The results enrich the fundamental understanding of the magnetic proximity effect in two-dimensional vdW heterostructures.

关键词： first-principles calculations antimonene/Fe_(3)GeTe_(2)vdW heterostructures magnetic proximity effect spin splitting

Controlled vapor growth of 2D magnetic Cr_(2)Se_(3)and its magnetic proximity effect in heterostructures

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Chinese Physics B 2021年第9期30卷 25-30页

作者： Danliang Zhang Chen Yi Cuihuan Ge Weining Shu Bo Li Xidong Duan Anlian Pan Xiao Wang School of Physics and Electronics Hunan UniversityChangsha 410082China Key Laboratory for Micro-Nano Physics and Technology of Hunan Province College of Materials Science and EngineeringHunan UniversityChangsha 410082China Hunan Key Laboratory of Two-Dimensional Materials and State Key Laboratory for Chemo/Biosensing and Chemometrics College of Chemistry and Chemical EngineeringHunan UniversityChangsha 410082China

Two-dimensional(2D)magnetic materials have aroused tremendous interest due to the 2D confinement of magnetism and potential applications in spintronic and valleytronic ***,most of the currently 2D magnetic materials are achieved by the exfoliation from their bulks,of which the thickness and domain size are difficult to control,limiting the practical device ***,we demonstrate the realization of thickness-tunable rhombohedral Cr_(2)Se_(3)nanosheets on different substrates via the chemical vapor deposition *** magnetic transition temperature at about 75 K is ***,van der Waals heterostructures consisting of Cr_(2)Se_(3)nanosheets and monolayer WS2 are *** observe the magnetic proximity effect in the heterostructures,which manifests the manipulation of the valley polarization in monolayer *** work contributes to the vapor growth and applications of 2D magnetic materials.

关键词： Cr_(2)Se_(3) magnetic proximity effect heterostructures

Probing magnetic-proximity-effect enlarged valley splitting in monolayer WSe2 by photoluminescence

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Nano Research 2018年第12期11卷 6252-6259页

作者： Chenji Zou Chunxiao Cong Jingzhi Shang Chuan Zhao Mustafa Eginligil Lishu Wu Yu Chen Hongbo Zhang Shun Feng Jing Zhang Hao Zeng Wei Huang Ting Yu Address correspondence to Ting Yu yuting@ntu.edu.sg Chunxiao Cong cxcong@*** Hao Zeng haozeng@bufalo.edu Wei Huang lamwhuang( ***

Possessing a valley degree of freedom and potential in information processing by manipulating valley features (such as valley splitting), group-VI monolayer transition metal dichalcogenides have attracted enormous interest. This valley splitting can be measured based on the difference between the peak energies of σ+ and σ− polarized emissions for excitons or trions in direct band gap monolayer transition metal dichalcogenides under perpendicular magnetic fields. In this work, a well-prepared heterostructure is formed by transferring exfoliated WSe2 onto a EuS substrate. Circular-polarization-resolved photoluminescence spectroscopy, one of the most facile and intuitive methods, is used to probe the difference of the gap energy in two valleys under an applied out-of-plane external magnetic field. Our results indicate that valley splitting can be enhanced when using a EuS substrate, as compared to a SiO2/Si substrate. The enhanced valley splitting of the WSe2/EuS heterostructure can be understood as a result of an interfacial magnetic exchange field originating from the magnetic proximity effect. The value of this magnetic exchange field, based on our estimation, is approximately 9 T. Our findings will stimulate further studies on the magnetic exchange field at the interface of similar heterostructures.

关键词： valley splitting transition metal dichalcogenides magnetic proximity effect heterostructure magnetic exchange field

Tunable perpendicular anisotropic magnetoresistance in CoO/Co/Pt heterostructures

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稀有金属：英文版 2023年第2期42卷 579-584页

作者： Qian-Qian Liu Guang Yang Jing-Yan Zhang Guo-Nan Feng Chun Feng Qian Zhan Ming-Hua Li Guang-Hua Yu Department of Materials Physics and Chemistry University of Science and Technology BeijingBeijing100083China

Transport properties of magnetron-sputtered CoO/Co/Pt heterostructures were investigated by physical property measurement *** types of magnetoresistance are observed in the heterostructures,including isotropic anisotropic magnetoresistance(AMR),AMR with geometric size effect,and interfacial effect.A reversal in sign of perpendicular AMR is found in the film CoO(3 nm)/Co(3 nm)/Pt(3 nm)compared to the film CoO(3 nm)/Co(3 nm)/CoO(3 nm),which is associated with ***,perpendicular AMR is tunable in the films CoO(3 nm)/Co(3 nm)/CoO(t)/Pt(3 nm)and CoO(3 nm)/Co(3 nm)/Pt(t)/CoO(3 nm)at will,with either positive or negative value,by varying the inserting layer *** electronic structure information of the samples was measured by X-ray photoelectron spectroscopy(XPS).The spin-related transport and XPS results manifest that magnetic proximity effect,surface scattering,together with oxygen migration contribute to the tunable function of Pt.

关键词： Perpendicular anisotropic magnetoresistance magnetic proximity effect Surface scattering X-ray photoelectron spectroscopy

The origin of spin current in YIG/nonmagnetic metal multilayers at ferromagnetic resonance

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Chinese Physics B 2017年第4期26卷 388-397页

作者：康韵钟海郝润润胡树军康仕寿刘国磊张引王向荣颜世申吴勇于淑云韩广兵姜勇梅良模 School of Physics and State Key Laboratory of Crystal Materials Shandong UniversityJi'nan 250100China Physics Department The Hong Kong University of Science and TechnologyClear Water BayKowloonHong KongChina State Key Laboratory for Advanced Metals and Materials School of Materials Science and EngineeringUniversity of Science and Technology BeijingBelting 100083China

Spin pumping in yttrium-iron-garnet（YIG）/nonmagnetic-metal（NM） layer systems under ferromagnetic resonance（FMR） conditions is a popular method of generating spin current in the NM layer.A good understanding of the spin current source is essential in extracting spin Hall angle of the NM and in potential spintronics *** is widely believed that spin current is pumped from precessing YIG magnetization into NM ***,by combining microwave absorption and DC-voltage measurements on thin YIG/Pt and YIG/NM_1/NM_2（NM_1 =Cu or Al,NM_2 =Pt or Ta）,we unambiguously showed that spin current in NM,instead of from the precessing YIG magnetization,came from the magnetized NM surface（in contact with thin YIG）,either due to the magnetic proximity effect（MPE） or from the inevitable diffused Fe ions from YIG to *** conclusion is reached through analyzing the FMR microwave absorption peaks with the DC-voltage peak from the inverse spin Hall effect（ISHE）.The voltage signal is attributed to the magnetized NM surface,hardly observed in the conventional FMR experiments,and was greatly amplified when the electrical detection circuit was switched on.

关键词： spin current spin pumping inverse spin Hall effect magnetic proximity effect magnetic insulator

Sign reversal and manipulation of anomalous Hall resistivity in facing-target sputtered Pt/Mn_(4)N bilayers

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Rare Metals 2023年第2期42卷 591-601页

作者： Ze-Yu Zhang Jia-Wei Jiang Xiao-Hui Shi Xiang Liu Xia Chen Zhi-Peng Hou Wen-Bo Mi Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology School of ScienceTianjin UniversityTianjin300354China School of Physics and Electronic Engineering Linyi UniversityLinyi276000China College of Science Civil Aviation University of ChinaTianjin300300China Guangdong Provincial Key Laboratory of Optical Information Materials and Technology&Institute for Advanced Materials South China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou510006China

The magnetic and electronic transport properties manipulated by spin-orbit torque have been devoted much attention as they show a great promise for future spintronic ***,the spin dependent transport properties of the facing-target sputtered Pt/Mn_(4)N bilayers on MgO(001)substrates have been investigated *** Hall resistivity of Pt/Mn_(4)N bilayers is strongly dependent on temperature,applied current intensity,Mn_(4)N and Pt layer *** temperature-dependent sign reversal of anomalous Hall resistivity appears in Pt/Mn_(4)N bilayers,which is dominated by the competition between the magnetic proximity and spin Hall ***,the magnitude of anomalous Hall resistivity can be manipulated by applied current *** critical and saturation currents are related to Mn_(4)N and Pt layer ***,a Dzyaloshinskii-Moriya interaction coefficient(D)of 5.63 mJ·m^(-2)is calculated in Pt/Mn_(4)N/MgO *** details of the anomalous Hall effects in Pt/Mn_(4)N bilayers are helpful to understand the interfacial effects between heavy metals and ferrimagnets.

关键词： Pt/Mn_(4)N bilayer Hall resistivity magnetic proximity effect Spin Hall effect(SHE) DzyaloshinskiiMoriya interaction(DMI)

Spin transport in a Zigzag normal/ferromagnetic graphene junction

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Chinese Physics B 2015年第5期24卷 514-518页

作者：史豪晟 Vahram L.Grigoryan Department of Physics and State Key Laboratory of Surface Physics Fudan University

We study magnetic proximity effect induced low-energy spin transport in the normal/ferromagnetic junction of a semi-infinite zigzag graphene nanoribbon. Due to the absence of a spin flip in a single interface, the spin transfer in this model can be described by the ＂two-spin channel＂ model. We identify each spin channel as either a perfect conducting or a non-conducting channel. This feature leads to spin filter in symmetric zigzag graphene nanoribbon and spin precession in antisymmetric zigzag graphene nanoribbon, and helps to directly determine the exchange-splitting intensity directly, even without an external auxiliary bias.

关键词： graphene junction spin filter spin transfer torque magnetic proximity effect