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low-noise,low-power-consumption seafloor vector magnetometer

Journal of Oceanology and Limnology 2023年第2期41卷 804-815页

作者： Xiaochen LI Xianhu LUO Ming DENG Ning QIU Zhen SUN Kai CHEN China University of Geosciences Beijing 100083China Guangzhou Marine Geological Survey China Geological SurveyMinistry of Natural ResourcesGuangzhou 511458Chinaa SCSIO Key Laboratory of Ocean and Marginal Sea Geology South China Sea Institute of OceanologyChinese Academy of SciencesGuangzhou 510301China Southern Marine Science and Engineering Guangdong Laboratory(Guangzhou) Guangzhou 511458China

The seafloor vector magnetometer is an effective tool for marine geomagnetic surveys and seafloor magnetotelluric(MT)detection.However,the noise,power consumption,cost,and volume characteristics of existing seafloor vector magnetometers are insufficient for practical use.Therefore,a low-noise,low-power-consumption seafloor vector magnetometer that can be used for data acquisition of deep-ocean geomagnetic vector components is developed and presented.A seafloor vector magnetometer mainly consists of a fluxgate sensor,data acquisition module,acoustic release module,glass sphere,frame,burn-wire release,and anchor.A new low-noise data acquisition module and a fluxgate sensor greatly reduce power consumption.Furthermore,compact size is achieved by integrating an acoustic telemetry module and replacing the acoustic release with an external burn-wire release.The new design and magnetometer characteristics reduce the volume of the instrument and the cost of hardware considerably,thereby improving the integrity and deployment efficiency of the equipment.Theoretically,it can operate for 90 days underwater at a maximum depth of 6000 m.The seafloor vector magnetometer was tested in the South China Sea and the Philippine Sea and obtained high-quality geomagnetic data.The deep-water environment facilitates magnetic field data measurements,and the magnetometer has an approximate noise level of 10 pT/rt(Hz)@1 Hz,a peak-to-peak value error of 0.2 nT,and approximate power consumption of 200 mW.The fluxgate sensor can measure the magnetic field in the lower frequency band and realize geomagnetic field measurements over prolonged periods.

关键词： seafloor vector magnetometer low noise low power consumption

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Design and performance of a high-speed and low-noise preamplifier for SiPM

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Nuclear Science and Techniques 2023年第11期34卷 93-102页

作者： Xi‑Yang Wang Hong‑Yu Zhang De‑Qing Fang Wan‑Bing He Xiao‑Long Wang Qi‑Bin Zheng Shi‑Ming Zou Key Laboratory of Nuclear Physics and Ion‑beam Application(MOE)and Institute of Modern Physics Fudan UniversityShanghai 200433China Shanghai Research Center for Theoretical Nuclear Physics NSFC and Fudan UniversityShanghai 200438China Laboratory of Radiation Detection and Medical Imaging and School of Health Science and Engineering University of Shanghai for Science and TechnologyShanghai 200093China

Considering the R&D for upgrading the K^(0)_(L) andμdetectors in the Belle II experiment using a scintillator and silicon pho-tomultiplier(SiPM),we designed a compact high-speed and low-noise preamplifier.The preamplifier demonstrated a good gain stability,bandwidth of 426 MHz,baseline noise level ofσ≈0.6 mV,dynamic range of up to170 mV of the input signal amplitude,good time resolution of 20 ps,and it can be comprehensively applied to SiPMs.Adopting pole-zero-cancelation in the preamplifier reduces both the rise and fall times of the SiPM signal,which can significantly improve the time resolution and reduce the pile-up when using a large SiPM or an array of SiPMs.Various combinations of the preamplifier and several types of SiPMs demonstrated time resolutions better than 50 ps for most cases;when the number of detected photons was larger than 60,a time resolution of approximately 25 ps was achieved.

关键词： Silicon photomultiplier High-speed amplifier low noise High time resolution

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low noise,continuous-wave single-frequency 1.5-μm laser generated by a singly resonant optical parametric oscillator

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Chinese Physics B 2011年第11期20卷 312-316页

作者：刘建丽刘勤李宏李鹏张宽收 State Key Laboratory of Quantum Optics and Quantum Optics Devices Institute of Opto-ElectronicsShanxi University

We report a low noise continuous-wave （CW） single-frequency 1.5-μm laser source obtained by a singly resonant optical parametric oscillator （SRO） based on periodically poled lithium niobate （PPLN）. The SRO was pumped by a CW single-frequency Nd：YVO4 laser at 1.06μm. The 1.02 W of CW single-frequency signal laser at 1.5 μm was obtained at pump power of 6 W. At the output power of around 0.75 W, the power stability was better than ±l.5% and no mode-hopping was observed in 30 min and frequency stability was better than 8.5 MHz in 1 min. The signal wavelength could be tuned from 1.57 to 1.59 μm by varying the PPLN temperature. The 1.5-μm laser exhibits low noise characteristics, the intensity noise of the laser reaches the shot noise limit （SNL） at an analysis frequency of 4 MHz and the phase noise is less than 1 dB above the SNL at analysis frequencies above 10 MHz.

关键词： singly resonant optical parametric oscillator 1.5-μm laser single-frequency operation low noise

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A low-noise high-linearity interface ASIC for MEMS gyroscopes

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Journal of Semiconductors 2013年第12期34卷 109-114页

作者：方然鲁文高王冠男陶婷婷张雅聪陈中建于敦山 National Key Laboratory of Science and Technology on Micro/Nano Fabrication Peking University

This paper presents a continuous-time analog interface ASIC for use in MEMS gyroscopes. A charge sensitive amplifier with a chopper stabilization method is adopted to suppress the low-frequency noise. In order to cancel the effect caused by the gyroscope capacitive mismatch, a mismatch auto-compensation circuit is imple- mented. The gain and phase shift of the drive closed loop is controlled separately by an auto gain controller and an adjustable phase shifter. The chip is fabricated in a 0.35 μm CMOS process. The test of the chip is performed with a vibratory gyroscope, and the measurement shows that the noise floor is 0.003°/s√Hz, and the measured drift stability is 43°/h. Within -300 to 300°/s of rotation rate input range, the non-linearity is less than 0.1%.

关键词： capacitive interface circuit MEMS gyroscope low noise ASIC

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A low power low noise analog front end for portable healthcare system

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Journal of Semiconductors 2015年第10期36卷 135-141页

作者：王艳朝柯可人秦文辉秦亚杰易婷洪志良 State Key Laboratory of ASIC & Systems Fudan University

The presented analog front end （AFE） used to process human bio-signals consists of chopping in- strument amplifier （IA）, chopping spikes filter and programmable gain and bandwidth amplifier. The capacitor- coupling input of AFE can reject the DC electrode offset. The power consumption of current-feedback based IA is reduced by adopting capacitor divider in the input and feedback network. Besides, IA＇s input thermal noise is decreased by utilizing complementary CMOS input pairs which can offer higher transconductance. Fabricated in Global Foundry 0.35 μm CMOS technology, the chip consumes 3.96 μA from 3.3 V supply. The measured input noise is 0.85μVrms （0.5-100 Hz） and the achieved noise efficient factor is 6.48.

关键词： AFE chopping IA low power consumption low noise NEF

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A monolithic 60GHz balanced low noise amplifier

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Journal of Semiconductors 2015年第4期36卷 110-114页

作者：杨雪杨浩张海英郑新年戴志伟李志强杜泽保 Institute of Microelectronics Chinese Academy of Sciences

This paper presents a 60 GHz balanced low noise amplifier. Compared with single-ended structures, the balanced structure can obtain a better input/output return loss, a lower noise figure （NF）, a 3 dB improvement of the 1 dB compression point, a 6 dB improvement of 1M3 and a doubled dynamic range. Each single-ended amplifier in this paper uses a four-stage cascade structure to achieve a high gain in broadband. At the operating frequency range of 59-64 GHz, the small signal gain of the balanced amplifier is more than 20 dB. Both the input and output return losses are less than -12 dB. The output 1 dB compression power is 10.5 dBm at 60 GHz. The simulation result for the NF is better than 3.9 dB. The chip is fabricated using a 0.15 μm GaAs pHEMT process with a size of 2.25 × 1.7 mm2.

关键词： balanced amplifier 60 GHz low noise

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Design of a low noise distributed amplifier with adjustable gain control in 0.15μm GaAs PHEMT

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Journal of Semiconductors 2012年第3期33卷 65-68页

作者：张瑛王志功徐建罗寅 Institute of RF-&OE-ICs Southeast University

A low noise distributed amplifier consisting of 9 gain cells is presented.The chip is fabricated with 0.15-μm GaAs pseudomorphic high electron mobility transistor（PHEMT） technology from Win Semiconductor of Taiwan.A special optional gate bias technique is introduced to allow an adjustable gain control range of 10 dB.A novel cascode structure is adopted to extend the output voltage and bandwidth.The measurement results show that the amplifier gives an average gain of 15 dB with a gain flatness of±1 dB in the 2-20 GHz band.The noise figure is between 2 and 4.1 dB during the band from 2 to 20 GHz.The amplifier also provides 13.8 dBm of output power at a 1 dB gain compression point and 10.5 dBm of input third order intercept point（IIP3）,which demonstrates the excellent performance of linearity.The power consumption is 300 mW with a supply of 5 V,and the chip area is 2.36×1.01 mm^2.

关键词： distributed amplifiers low noise adjustable gain control GaAs PHEMT

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A low noise multi-channel readout IC for X-ray cargo inspection

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Journal of Semiconductors 2013年第4期34卷 121-126页

作者：王旭杨洪艳袁颖吴武臣 VLSI and System Laboratory College of Electronic Information and Control EngineeringBeijing University of Technology

A low noise multi-channel readout integrated circuit （IC） which converts a detector current to analog voltage for X-ray cargo inspection is described. The readout IC provides 32 channels of a circuit having a maxi- mum dynamic range of 15 bit and is comprised of integrator gain selection, timing generator, shift register chain, integrator array, sample/hold （S/H） stage amplifier etc. and occupies a die area of 2.7 × 13.9 mm2. It operates at It was fabricated using 0.6 μm standard CMOS process, 1 MHz, consumes 100 mW from a 5 V supply and 4.096 V as reference, and has a measured output noise of 85 μVms on 63 pF of integrator gain capacitance and 440 pF of photodiode terminal capacitance so that steel plate penetration thickness can reach more than 400 mm.

关键词： low noise multi-channel readout IC dynamic range X-ray cargo inspection

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Design and implementation of 83-nm low noise InP-based InAlAs/InGaAs PHEMTs

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Journal of Semiconductors 2015年第8期36卷 83-87页

作者：王志明赵卓彬胡志富黄辉崔玉兴孙希国默江辉李亮付兴昌吕昕 Beijing Key Laboratory of Millimeter Wave and Terahertz Technology Beijing Institute of Technology Hebei Semiconductor Research Institute National Institute of Metrology

83-nm T-shaped gate InP-based In0.52Al0.48As/In0.65Ga0.35As pseudomorphic high electron mobility transistors （PHEMTs） with excellent DC and RF performance as well as low noise characteristics are reported, including a maximum saturation current density/ass of 894 mA/mm, a maximum extrinsic transconductance gm, max of 1640 mS/mm, an extrapolated cutoff frequency ft of 247 GHz and a maximum oscillation frequency fmax of 392 GHz which were based on the measured S-parameters from 1 to 110 GHz. The minimum noise figure （NFmin） measured by the cold-source method is 1 dB at 30 GHz associated with a gain of 14.5 dB at Vds of 0.8 V and Ids of 17 mA. These results were obtained by the combination of increased InAs mole fraction in the channel, gate size scaling, parasitic reduction and the quantization channel. These excellent results make it one of the most suitable devices for millimeter wave （MMW） low noise applications.

关键词： InP PHEMT millimeter wave low noise on-wafer measurement

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A high speed 1000 fps CMOS image sensor with low noise global shutter pixels

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Science China(Information Sciences) 2014年第4期57卷 235-242页

作者： ZHOU YangFan CAO ZhongXiang QIN Qi LI QuanLiang SHI Cong WU NanJian State Key Laboratory for Superlattices and Microstructures Institute of SemiconductorsChinese Academy of Sciences

A low read noise 8T global shutter pixel for high speed CMOS image sensor is proposed in this paper.The pixel has a pixel level sample-and-hold circuit and an in-pixel amplifier whose gain is larger than one.Using pixel level sample-and-hold circuit,the KTC noise on FD node can be effectively cancelled by correlated double sampling operation.The in-pixel amplifier with a gain larger than one is employed for reducing the pixel level sample-and-hold capacitors thermal noise and their geometric size.A high speed 1000 fps 256×256 CMOS image sensor based on the pixel is implemented in 0.18μm CMOS process.The chip active area is 5 mm×7 mm with a pixel size of 14μm×14μm.The developed sensor achieves a read noise level as low as 14.8e-while attaining a high fill factor of 40%.The full well capacity can contain 30840e-and the resulting signal dynamic range is 66 dB.

关键词： global shutter CDS low noise fill factor high speed image sensor

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