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Fabrication of sub-micro size PZT array and their ferroelectric properties

Science China(Technological Sciences) 2006年第6期49卷 693-700页

作者： ZHAO Gaoyang1, ZHANG Weihua1, XU Guomin1, DENG Xiaocui1, JIANG Bailing1 & ZHAO Wei2 1. School of Materials Science and Engineering, Xi’an University of Technology, Xi’an 710048, China 2. Xi’an Institute of Optics and Precision Mechanics of CAS, Xi’an 710048, China School of Materials Science and Engineering Xi’an University of Technology Xi’an China Xi’an Institute of Optics and Precision Mechanics of CAS Xi’an China

The photosensitive PZT sols and their gel films were prepared by sol-gel process. Based on the photosensitivity of the PZT gel films, two-dimensional (2D) array of the PZT gel film was fabricated using twice-exposure of double-beam interference on the gel film. PZT gel films coated on ITO/quartz substrate were exposed to an interference fringe of 325 He-Cd laser beams, the substrate was rotated by 90° between the first and second irradiation steps. Island type periodic 2D array structures with a pitch of 1 μm and cell size of about 480 nm × 480 nm × 40 nm were formed after the irradiation, and followed by leaching with organic solvent, and then by heat treatment at 600℃ for 15 min. The hysteresis loop. of the cell in PZT array were in-situ measured by the online-operation of TF analyzer and atomic force microscope (AFM). The probe can be located on the locked cell of PZT array in the AFM image. The alternating voltage applied to the locked cell is supplied by the TF analyzer through the conductive coating probe, and then the test signal is fed back to the TF analyzer to obtain the hysteresis loop.of the locked cell of array in the absence of top electrode. The results show that the sub-micro size PZT arrays prepared in this way are of polarization reversal characteristics with the alternating electric fields, thereby exhibiting obvious ferroelectricity.

关键词： PZT, ferroelectric films, photosensitivity, hysteresis loop.

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Leakage behavior and distortion of the hysteresis loop.in ferroelectric thin films

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Science China(Technological Sciences) 1997年第2期40卷 126-134页

作者：郑立荣林成鲁许华平邹世昌 Masanori Okuyama Shanghai Institute of Metallurgy Chinese Academy of Sciences Shanghai 200050 China Department of Electrical Engineering Faculty of Engineering SciencesOsaka UniversityOsaka 560Japan

Leakage behavior and distortion of the polarization hysteresis loop.in ferroelectric thin films are analyzed by applying a totally depleted asymmetric back-to-back Schottky model, with the Pt/Pb(Zr, Ti)O3/Pt ( Pt/ PZT/Pt) sandwich structural thin film capacitor as an example. Some interesting phenomena resulting from the asymmetric interfaces, such as the leakage current level, the flat-band voltage, the disclosure of the hysteresis loop. and the change in the remanent polarization and coercive field, as well as the vertical drift of the polarization hysteresis loop. are discussed in detail. The calculated results are also verified with experiments.

关键词： ferroelectric thin film Schottky barrier leakage hysteresis loop.

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Uniqueness of limit cycles in codimension two bifurcations

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Chinese Science Bulletin 1995年第21期40卷 1766-1771页

作者：韩茂安 Department of Mathematics Shandong Mine Institute Tai'an 271019 China

Consider a three-dimensional autonomous system of the form of =f(u), u∈R^3, (0.1) where f(0)=0, and Df(0)=. By transforming eq. (0.1) into a normal form equation and then unfolding the truncated equation, one can obt... 详细信息

关键词： uniqueness limit cycle heteroclinic loop.

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