检索结果-南通市图书馆

InAsSb thick epilayers applied to long wavelength photoconductors

在线全文

学校读者我要写书评

暂无评论

International Journal of Minerals,Metallurgy and Materials 2013年第4期20卷 393-396页

作者： Yu-zhu Gao Xiu-ying Gong Guang-hui Wu Yan-bin Feng Takamitsu Makino Hirofumi Kan Tadanobu Koyama Yasuhiro Hayakawa School of Electronics and Information Engineering Tongji University Huaxing Infrared Device Co. Hamamatsu Photonics K.K. Research Institute of Electronics Shizuoka University

InAs0.052Sb0.948 epilayers with cutoff wavelengths longer than 8 μm were successfully grown on InAs substrates using melt epitaxy （ME）. Scanning electron microscopy observations show that the interface between the epilayers and substrates is flat, indicating the good quality of the epilayers, and the thickness of the epilayers is 40 μm. Photoconductors were fabricated using InAs0.052Sb0.948 thick epilayers grown by ME. Ge optical lenses were set on the photoconductors. At room temperature, the photoresponse wavelength range was 2-10μm. The peak detectivity Dλp reached 5.4 × 10^9 cm-Hz^1/2.W^-1 for the immersed detectors. The detectivity D^＊ was 9.3 × 10^8 and 1.3 × 10^8 ***^1/2.W^-1 at the wavelength of 8 and 9 μm, respectively. The good performance of the uncooled InAsSb detectors was experimentally validated.

关键词： semiconducting indium compounds thick epilayers long wavelength photoconductors detectivity

GaAs-based long-wavelength InAs bilayer quantum dots grown by molecular beam epitaxy

在线全文

学校读者我要写书评

暂无评论

Journal of Semiconductors 2011年第8期32卷 10-13页

作者：朱岩李密锋贺继方喻颖倪海桥徐应强王娟贺振宏牛智川 State Key Laboratory for Superlattices and Microstructures Institute of SemiconductorsChinese Academy of Sciences

Molecular beam epitaxy growth of a bilayer stacked InAs/GaAs quantum dot structure on a pure GaAs matrix has been systemically *** influence of growth temperature and the InAs deposition of both layers on the optical properties and morphologies of the bilayer quantum dot（BQD） structures is *** optimizing the growth parameters,InAs BQD emission at 1.436μm at room temperature with a narrower FWHM of 27 meV was *** density of QDs in the second layer is around 9×10~9 to 1.4×10^（10） cm^（-2）. The BQD structure provides a useful way to extend the emission wavelength of GaAs-based material for quantum functional devices.

关键词： InAs bilayer quantum dots molecular beam epitaxy long wavelength photoluminescence

BDS triple-frequency carrier-phase linear combination models and their characteristics

在线全文

学校读者我要写书评

暂无评论

Science China Earth Sciences 2015年第5期58卷 896-905页

作者： ZHANG XiaoHong HE XiYang School of Geodesy and Geomatics Wuhan University

An investigation has been made on the models and characteristics of triple-frequency carrier-phase linear combinations for the Bei Dou Navigation Satellite System(BDS). Based on the three frequencies of the BDS, three categories of combinations are developed: ionosphere-free combinations(i.e., those that eliminate the ionospheric effect), minimum-noise combinations(those that mitigate the effects of thermal noise and multiple paths), and troposphere-free combinations(those that mitigate tropospheric effects). Both the ionosphere-free and troposphere-free combinations can be expressed as planes, whereas the minimum-noise combinations can be expressed as a line. The relationships between these three categories of linear combinations are investigated from the perspective of geometry. The angle between the troposphere-free plane and ionosphere-free plane is small, while the angles between the troposphere-free plane and the minimum-noise line, and between the ionosphere-free plane and the minimum-noise line, are large. Specifically, the troposphere-free plane is orthogonal to the minimum-noise line. By introducing the concepts of lane number and integer ionosphere number, the characteristics of the long-wavelength integer combinations and ionosphere-free integer combinations are investigated. The analysis indicates that the longest wavelength that can be formed for integer combinations is 146.53 m, and the ionosphere-free integer combinations all have large noise amplification factors. The ionosphere-free integer combination with minimum noise amplification factor is(0, 62, 59). According to the lane number, integer ionosphere number, and noise amplification factor, optimal integer combinations with different characteristics are presented. For general short baselines and long baselines, three independent integer combinations are suggested.

关键词： BeiDou Navigation Satellite System triple-frequency linear combination long wavelength ionosphere-free minimum noise

同方期刊数据库

Ⅱ-Ⅵ Visible-Blind UV Photodetectors

在线全文

学校读者我要写书评

暂无评论

材料科学与工程学报 2000年第Z1期20卷 499-503页

作者： I.K. Sou Department of Physics Hong Kong University of Science and TechnologyClear Water Bay Kowloon Hong Kong China

This article gives a review on the physics and technical issues involved in the development of ZnS-based Ⅱ-Ⅵ visible-blind UV photodetectors. The results of photoresponse studies on ZnS, ZnSSe and ZnSTe diodes indicate that Te isoelectronic trapping effect is responsible for the gradual turn-on characteristic of low Te containing ZnSTe Schottky barrier photodiodes. The results also reveal that the ZnSSe diode, having the advantage of being free of isoelectronic centers, is a more suitable choice for applications requiring high visible rejection power. It is demonstrated that highly UV sensitive responsivity with an abrupt long wavelength cutoff tailored to lie between 340-400nm can be achieved in the ZnSSe diode system.

关键词： Schottky barrier long wavelength

Design of Broadband L-band Erbium Doped Fiber Amplifier

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Chinese Journal of Lasers 2002年第3期 64-68页

作者： JIANG Chun ZENG Qingji (Center for Broadband Optical Networking Technology, Shanghai Jiao Tong University, Shanghai 200030, China)

An 80 nm bandwidth long wavelength erbium doped fiber amplifier using a seed light injection method is designed. It is shown that when the wavelength of the seed beam varies from 1520 nm to 1570 nm, the gain at 1610 nm increases and reaches maximum near 1553 nm and then decreases. The gain increases with the seed light power. With the seed light , the long wavelength Erbium doped fiber amplifier has 80 nm bandwidth (1570～1650 nm), 30 dB gain and noise figure less than 5.0 dB.

关键词： broadband long wavelength erbium doped fiber amplifier seedlight WDM

Potential of nanocrystalline germanium for solar cells with long operating wavelengths

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Potential of nanocrystalline germanium for solar cells with ...