检索结果-南通市图书馆

Dual-logic-in-memory implementation with orthogonal polarization of van der Waals ferroelectric heterostructure

InfoMat 2024年第2期6卷 107-117页

作者： Jingjie Niu Sumin Jeon Donggyu Kim Sungpyo Baek Hyun Ho Yoo Jie Li Ji-Sang Park Yoonmyung Lee Sungjoo Lee SKKU Advanced Institute of Nanotechnology(SAINT) Sungkyunkwan UniversitySuwonRepublic of Korea Department of Nano Science and Technology Sungkyunkwan UniversitySuwonRepublic of Korea Department of Electrical and Computer Engineering Sungkyunkwan UniversitySuwonRepublic of Korea IMEC HeverleeBelgium Department of Nano Engineering Sungkyunkwan UniversitySuwonRepublic of Korea

The rapid advancement of AI-enabled applications has resulted in an increasing need for energy-efficient computing ***-in-memory is a promising approach for processing the data stored in memory,wherein fast and efficient computations are possible owing to the parallel execution of reconfigurable logic *** this study,a dual-logic-in-memory device,which can simultaneously perform two logic operations in four states,is demonstrated using van der Waals ferroelectric field-effect transistors(vdW FeFETs).The proposed dual-logic-in-memory device,which also acts as a twobit storage device,is a single bidirectional polarization-integrated ferroelectric field-effect transistor(BPI-FeFET).It is fabricated by integrating an in-plane vdW ferroelectric semiconductor SnS and an out-of-plane vdW ferroelectric gate dielectric material—CuInP_(2)S_(6).Four reliable resistance states with excellent endurance and retention characteristics were *** two-bit storage mechanism in a BPI-FeFET was analyzed from two perspectives:carrier density and carrier injection controls,which originated from the out-of-plane polarization of the gate dielectric and in-plane polarization of the semiconductor,*** conventional multilevel FeFETs,the proposed BPIFeFET does not require additional pre-examination or erasing steps to switch from/to an intermediate polarization,enabling direct switching between the four memory *** utilize the fabricated BPI-FeFET as a dual-logic-inmemory device,two logical operations were selected(XOR and AND),and their parallel execution was *** types of logic operations could be implemented by selecting different initial states,demonstrating various types of functions required for numerous neural network *** flexibility and efficiency of the proposed dual-logic-in-memory device appear promising in the realization of next-generation low-power computing systems.

关键词： ferroelectric field-effect transistor in-plane ferroelectricity logic-in-memory out-of-plane ferroelectricity

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Optically driven intelligent computing with ZnO memristor

引用

Fundamental Research 2024年第1期4卷 158-166页

作者： Jing Yang Lingxiang Hu Liufeng Shen Jingrui Wang Peihong Cheng Huanming Lu Fei Zhuge Zhizhen Ye Ningbo Institute of Materials Technology and Engineering Chinese Academy of SciencesNingbo 315201China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100029China Center for Excellence in Brain Science and Intelligence Technology Chinese Academy of SciencesShanghai 200072China Institute of Wenzhou Zhejiang UniversityWenzhou 325006China State Key Laboratory of Silicon Materials School of Materials Science and EngineeringZhejiang UniversityHangzhou 310027China

Artificial vision is crucial for most artificial intelligence *** artificial visual systems have been facing challenges in terms of real-time information processing due to the physical separation of sensors,memories,and processors,which results in the production of a large amount of redundant data as well as the data conversion and transfer between these three components consuming most of the time and *** optoelectronic memristors with the ability to realize integrated sensing-computing-memory(ISCM)are key candidates for solving such challenges and therefore attract increasing *** present,the memristive ISCM devices can only perform primary-level computing with external light signals due to the fact that only monotonic increase of memconductance upon light irradiation is achieved in most of these ***,we propose an all-optically controlled memristive ISCM device based on a simple structure of Au/ZnO/Pt with the ZnO thin film sputtered at pure Ar *** device can perform advanced computing tasks such as nonvolatile neuromorphic computing and complete Boolean logic functions only by light irradiation,owing to its ability to reversibly tune the memconductance with ***,the device shows excellent operation stability ascribed to a purely electronic memconductance tuning ***,this study is an important step towards the next generation of artificial visual systems.

关键词： Memristor All-optically controlling ZnO thin filmArtificial vision Nonvolatile neuromorphic computing logic-in-memory

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications

引用

Science China(Information Sciences) 2023年第10期66卷 84-104页

作者： Zhaohao ZHANG Guoliang TIAN Jiali HUO Fang ZHANG Qingzhu ZHANG Gaobo XU Zhenhua WU Yan CHENG Yan LIU Huaxiang YIN Integrated Circuit Advanced R&D Center Institute of Microelectronics of Chinese Academy of Sciences School of Integrated Circuits University of Chinese Academy of Sciences School of Microelectronics Xidian University Department of Electronics East China Normal University

Hafnium oxide-based ferroelectric field-effect-transistors(FeFET), which combine super-steep logical switching and low power non-volatile memory functions, have significant potential for post-Moore integrated circuit innovations with higher energy efficiency and larger integration scale. In this review, recent research into hafnium oxide-based ferroelectric(FE) films and different functional devices is presented,from fundamentals to applications. Different technological challenges and state-of-the-art research and development efforts related to the physical understanding and performance optimization of FE films, advanced hafnium oxide-based device integration, and device applications in logic-in-memory and artificial synapses and neurons for neuromorphic computing are addressed.

关键词： ferroelectric FeFET hafnium oxide HZO logic-in-memory neuromorphic computing

来源：

同方期刊数据库评论

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

欢迎您,

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

请选择保存的检索档案：

请选择收藏分类：

通借通还

欢迎您,

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：