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Transient Characteristics of a Nonlinear GaAs Photoconductive Semiconductor Switch

Journal of Semiconductors 2008年第6期29卷 1108-1110页

作者：王馨梅施卫屈光辉田立强西安理工大学西安710048

The transient resistance,voltage,and power of a nonlinear GaAs photoconductive semiconductor switch （PCSS） are presented by the finite difference formula to deal with the experiment data, based on the conversation of energy in the switch circuit. This method resolves the problem of directly measuring the transient characteristics of PCSS in nonlinear mode. The curve of transient voltage shows that the average electric field of PCSS in the lock-on period is always higher than the Gunn threshold,and increases monotonically. By comparing the transient power curves of the PCSS and the electrical source,it is demonstrated directly that the power shortage leads to the PCSS from the lock-on state into the selfturnoff state,so a controllable turnoff of the PCSS in lock-on by changing the distribution of the circuit power is predicted.

关键词： photoconductive semiconductor switch lock-on effect nonlinear mode controllable turnoff

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Investigation of semi-insulating GaAs photoconductive switches triggered by semiconductor lasers

Investigation of semi-insulating GaAs photoconductive switch...

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2007亚洲光电子会议半导体激光器及应用分会场

作者： SHI Wei* LIAO Xue LIU Zheng MA Deming Applied Physics Department Xi’an University of Technology Xi’an 710048 China

The experiment result of semi-insulating GaAs photoconductive semiconductor switch（PCSS）with different electrode gaps triggered by semiconductor laser is reported. With the biased voltage of 500V, the semi-insulating GaAs PCSS with 2mm electrode gap is triggered by laser pulse with 5ns pulse width and repetition rate of 15 kHz, then two groups of electrical pulse samples indicate that laser pulse is instable when laser energy is very low. With the biased voltage of 210V, the GaAs PCSS with 0.5mm electrode gap is triggered by the laser pulse in several dozens nanoseconds at 905nm with a repetition rate of 2 kHz. A stable linear electrical pulse is observed. When the energy of the laser increases, the amplitude and the width of the electrical pulse also increase. It indicates that a stable electrical pulse is obtained while laser energy is high. With the biased voltage of 2400V, the GaAs PCSS with 1mm electrode gap is triggered by laser pulse about 100nJ in 40ns at 904nm. The GaAs PCSS switches a electrical pulse with a voltage up to 1700V. Carriers accumulation effect is discussed and the critical value of carriers accumulation effect is given. The relation of the biased voltage, electrode gap and carriers accumulation effect is also discussed. The concentration of deep EL2 traps in GaAs has a certain effect on nonlinear mode of GaAs PCSS.

关键词： photoconductive switch laser pulse semi-insulating GaAs linear mode nonlinear mode lock-on effect carriers accumulation light triggering semiconductor lasers EL2 traps

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