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Intrinsic carrier multiplication in layered Bi_(2)O_(2)Se avalanche photodiodes with gain bandwidth product exceeding 1 GHz

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Nano Research 2021年第6期14卷 1961-1966页

作者： Vinod K.Sangwan Joohoon Kang David Lam J.Tyler Gish Spencer A.Wells Jan Luxa James P.Male GJeffrey Snyder Zdenek Sofer Mark C.Hersam Department of Materials Science and Engineering Northwestern UniversityEvanstonIL60208USA Department of Inorganic Chemistry University of Chemistry and Technology PragueTechnicka 516628Prague 6Czech Republic Department of Chemistry Northwestern UniversityEvanstonIL60208USA Department of Electrical and Computer Engineering Northwestern UniversityEvanstonIL60208USA

Emerging layered semiconductors present multiple advantages for optoelectronic technologies including high carrier mobilities,strong light-matter interactions,and tunable optical absorption and ***,metal-semiconductor-metal avalanche photodiodes(APDs)are fabricated from Bi2O2Se crystals,which consist of electrostatically bound[Bi2O2]2+and[Se]2−*** resulting APDs possess an intrinsic carrier multiplication factor up to 400 at 7 K with a responsivity gain exceeding 3,000 A/W and bandwidth of~400 kHz at a visible wavelength of 515.6 nm,ultimately resulting in a gain bandwidth product exceeding 1 *** to exceptionally low dark currents,Bi2O2Se APDs also yield high detectivities up to 4.6×1014 Jones.A systematic analysis of the photocurrent temperature and bias dependence reveals that the carrier multiplication process in Bi2O2Se APDs is consistent with a reverse biased Schottky diode model with a barrier height of~44 meV,in contrast to the charge trapping extrinsic gain mechanism that dominates most layered semiconductor *** this manner,layered Bi2O2Se APDs provide a unique platform that can be exploited in a diverse range of high-performance photodetector applications.

关键词： layered semiconductor photodetector high-frequency Schottky diode impact ionization

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Pressure-driven symmetry breaking and electron disproportionation of the trigonal Nb_(3)cluster in Nb_(3)Cl_(8)

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Science China(Physics,Mechanics & Astronomy) 2022年第7期65卷 153-158页

作者： Zimin Jiang Dequan Jiang Yiming Wang Chen Li Ke Liu Ting Wen Fuyang Liu Zhengyang Zhou Yonggang Wang Center for High Pressure Science and Technology Advanced Research(HPSTAR) Beijing 100094China Shanghai Institute of Ceramics Chinese Academy of SciencesShanghai 201899China

Symmetry breaking of metal cluster-based strongly correlated systems can give rise to collective ***,the twodimensional Nb_(3) cluster compound Nb_(3)Cl_(8) is shown to suffer dramatic symmetry breaking and electron disproportionation under compression.A structural phase transition from trigonal P–3m1 to monoclinic C2/m is observed near 8 GPa with the three-fold symmetry *** disproportionation occurs on Nb_(3) clusters from delocalized Nb^(8/3+)Nb^(8/3+)Nb^(8/3+)to localized Nb^(3+)Nb^(3+)Nb^(2+),which results in a subtle bandgap discontinuity,as evidenced by electrical transport and UV-Vis absorption measurements.

关键词： Nb_(3)Cl_(8) symmetry breaking electron disproportionation layered semiconductor high pressure

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Peeling off the surface: Pt-decoration of WSe 2 nanoflakes results in exceptional photoelectrochemical HER activity

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SusMat 2022年第6期2卷 749-760页

作者： Peter S.Toth Gabor Szabo Gabor Bencsik Gergely F.Samu Krishnan Rajeshwar Csaba Janaky Department of Physical Chemistry and Materials Science Interdisciplinary Excellence CenterUniversity of SzegedSzegedHungary Department of Chemistry and Biochemistry The University of Texas at ArlingtonArlingtonTexasUSA

Photoelectrochemical(PEC)hydrogen evolution reaction(HER)was studied on exfoliated,pristine and Pt-decorated tungsten diselenide(p-WSe_(2))nanoflake samples,using a previously developed microdroplet PEC microscopy *** WSe 2 nanoflakes had well-defined thicknesses as measured by atomic force microscopy,and the Pt nanoparticles(NPs)were deposited by a variable num-ber of atomic layer deposition(ALD)*** exceptionally high photocurrent density of 49.6 mA cm^(−2)(under 220 mW cm^(−2) irradiation)and internal-photon-to-electron-conversion efficiency(∼90%at 550 nm)were demonstrated on these Pt-decorated WSe_(2)(WSe_(2)-Pt)*** Pt NP loading and thickness of WSe_(2) nanoflakes(in the 24–235 nm range)were used to fine-tune their PEC activity for *** found similar charge transfer and surface recombination kinetics of pristine and WSe_(2)-Pt specimens(as assessed by intensity-modulated photocurrent spectroscopy),which indicated significant differences in their bulk properties.X-ray and ultraviolet photoelectron spectroscopies were performed to identify defect states and quantify the density of states around the valence band of WSe_(2).The elevated temperature of the ALD process and the evolving Pt NP phase conspired to passivate the sub-surface(i.e.,bulk)defects in the WSe_(2) nanoflakes,resulting in their vastly improved PEC performance.

关键词： atomic layer deposition defect migration density of states hydrogen evolution layered semiconductor photoelectrochemical kinetics

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Comparative coherence between layered and traditional semiconductors: unique opportunities for heterogeneous integration

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International Journal of Extreme Manufacturing 2023年第4期5卷 1-35页

作者： Zhuofan Chen Xiaonan Deng Simian Zhang Yuqi Wang Yifei Wu Shengxian Ke Junshang Zhang Fucheng Liu Jianing Liu Yingjie Liu Yuchun Lin Andrew Hanna Zhengcao Li Chen Wang State Key Laboratory of New Ceramics and Fine Processing Key Laboratory of Advanced Materials of Ministry of EducationSchool of Materials Science and EngineeringTsinghua UniversityBeijing 100084People’s Republic of China Beijing Advanced Innovation Center for Integrated Circuits Beijing 100084People’s Republic of China

As Moore’s law deteriorates,the research and development of new materials system are crucial for transitioning into the post Moore *** semiconductor materials,such as silicon,have served as the cornerstone of modern technologies for over half a *** has been due to extensive research and engineering on new techniques to continuously enrich silicon-based materials system and,subsequently,to develop better performed silicon-based ***,in the emerging post Moore era,layered semiconductor materials,such as transition metal dichalcogenides(TMDs),have garnered considerable research interest due to their unique electronic and optoelectronic properties,which hold great promise for powering the new era of next generation *** a result,techniques for engineering the properties of layered semiconductors have expanded the possibilities of layered semiconductor-based ***,there remain significant limitations in the synthesis and engineering of layered semiconductors,impeding the utilization of layered semiconductor-based devices for mass *** a practical alternative,heterogeneous integration between layered and traditional semiconductors provides valuable opportunities to combine the distinctive properties of layered semiconductors with well-developed traditional semiconductors materials ***,we provide an overview of the comparative coherence between layered and traditional semiconductors,starting with TMDs as the representation of layered *** highlight the meaningful opportunities presented by the heterogeneous integration of layered semiconductors with traditional semiconductors,representing an optimal strategy poised to propel the emerging semiconductor research community and chip industry towards unprecedented advancements in the coming decades.

关键词： heterogeneous integration van der Waals heterostructure post Moore era layered semiconductor transition metal dichalcogenide layered-traditional semiconductor heterostructure

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