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Simulation of a high-performance enhancement-mode HFET with back-to-back graded AlGaN layers

Science China(Information Sciences) 2019年第6期62卷 87-97页

作者： Fu PENG Chao YANG Siyu DENG Dongya OUYANG Bo ZHANG Jie WEI Xiaorong LUO state Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China

A novel three-dimensional hole gas(3 DHG) enhancement-mode(E-mode) heterostructure fielde?ect transistor(HFET) is proposed and investigated. It features back-to-back graded AlGaN(BGA) barrier layers consisting of a positive-graded AlGaN layer and a negative-graded AlGaN layer, which form polarization gradient and subsequently induce the three-dimensional electron gas(3 DEG) and 3 DHG in the positiveand negative-graded AlGaN layers, respectively. The source and drain are located at the same side of the metal-insulator-semiconductor(MIS) trench gate, and the source is in contact with the HfO2 gate ***, the on-state current is significantly improved owing to the high-density 3 DEG in the positive-graded AlGaN. Next, the vertical conductive channel between the source and 3 DEG is blocked by the 3 DHG, thereby realizing the E-mode. The threshold voltage(Vth) can be modulated by a partial doping conductive ***, a high breakdown voltage(BV) is obtained, because the polarization junction formed by the polarization charges assists in depleting the drift region in the o?-state. Next, the BGA-HFET is smaller than the conventional HFET(Con-HFET) owing to the special location of the source. The BV of the proposed HFET sharply increases to 919 V from 39 V of the Con-HFET with the same gate-drain spacing, and the saturation drain current is increased by 103.5%.

关键词： graded AlGaN 3DHG-3DEG large on-state current high voltage enhancement mode

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