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Fabrication and characteristics of a 4H-SiC junction barrier schottky diode

Journal of Semiconductors 2011年第6期32卷 33-35页

作者：陈丰平张玉明吕红亮张义门郭辉郭鑫 School of Microelectronics Key Laboratory of Wide Band-Gap Semiconductor Materials and DevicesXidian University

4H-SiC junction barrier schottky（JBS）diodes with four kinds of design have been fabricated and characterized using two different processes in which one is fabricated by making the P-type ohmic contact of the anode independently,and the other is processed by depositing a schottky metal multi-layer on the whole *** reverse performances are compared to find the influences of these *** results show that JBS diodes with field guard rings have a lower reverse current density and a higher breakdown voltage,and with independent P-type ohmic contact manufacturing,the reverse performance of 4H-SiC JBS diodes can be improved effectively. Furthermore,the P-type ohmic contact is studied in this work.

关键词： 4H-SiC junction barrier schottky field guard ring

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Edge termination study and fabrication of a 4H-SiC junction barrier schottky diode

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Chinese Physics B 2011年第11期20卷 446-450页

作者：陈丰平张玉明张义门汤晓燕王悦湖陈文豪 School of Microelectronics Key Laboratory of Wide Band-Gap Semiconductor Materials and DevicesXidian University School of Technical Physics Xidian University

The 4H-SiC junction barrier schottky （JBS） diodes terminated by field guard rings and offset field plate are designed, fabricated and characterized. It is shown experimentally that a 3-μm P-type implantation window spacing gives an optimum trade-off between forward drop voltage and leakage current density for these diodes, yielding a specific on-resistance of 8.3 mΩ-cm2. A JBS diode with a turn-on voltage of 0.65 V and a reverse current density less than 1 A/cm2 under 500 V is fabricated, and the reverse recovery time is tested to be 80 ns, and the peak reverse current is 28.1 mA. Temperature-dependent characteristics are also studied in a temperature range of 75 °C-200 °C. The diode shows a stable schottky barrier height of up to 200°C and a stable operation under a continuous forward current of 100 A/cm2.

关键词： 4H-SiC junction barrier schottky offset field plate electrical characteristics

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